IXTH67N10 Equivalent & Substitute Parts

Part Overview

The IXTH67N10 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 67A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247 package and is designed for high-power switching applications. The part carries a Last Time Buy product status, indicating that the original manufacturer has discontinued or will discontinue production. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term product availability for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	67	A
On-State Resistance (Rds On Max) @ Id, Vgs	25 mOhm @ 33.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 4mA
Gate Charge (Qg Max) @ Vgs	260	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	4500	pF @ 25V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTH67N10 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be equal to or greater than 100V
Continuous Drain Current (Id): Must be equal to or greater than 67A at 25°C
On-State Resistance (Rds On): Must not exceed the maximum specified value to maintain thermal performance
Package Type: Must be TO-247-3 or compatible TO-247 variant for mechanical fit
Mounting Type: Must be Through Hole to maintain PCB assembly compatibility
Gate Threshold Voltage (Vgs(th)): Must fall within acceptable range for gate drive circuit compatibility
Maximum Gate Voltage (Vgs Max): Must be ±20V to ensure gate drive circuit compatibility

Substitution Logic: Parts are considered equivalent or suitable substitutes when they meet or exceed the electrical performance requirements of the IXTH67N10 while maintaining mechanical compatibility. Substitutes may have higher voltage ratings, higher current ratings, lower on-state resistance, or improved thermal characteristics, provided they operate within the same gate drive voltage specifications and package footprint.

Parameter Comparison

Parameter	IXTH67N10	IXFH110N10P	IXFH76N15T2	HUF75639G3	IRFP3710PBF
Manufacturer	IXYS	IXYS	IXYS	onsemi	Infineon Technologies
Vdss (V)	100	100	150	100	100
Id @ 25°C (A)	67	110	76	56	57
Rds On Max (mOhm)	25 @ 33.5A, 10V	15 @ 500mA, 10V	22 @ 38A, 10V	25 @ 56A, 10V	25 @ 28A, 10V
Vgs(th) Max (V)	4 @ 4mA	5 @ 4mA	4.5 @ 250µA	4 @ 250µA	4 @ 250µA
Qg Max (nC)	260 @ 10V	110 @ 10V	97 @ 10V	130 @ 20V	190 @ 10V
Ciss Max (pF)	4500 @ 25V	3550 @ 25V	5800 @ 25V	2000 @ 25V	3000 @ 25V
Power Dissipation Max (W)	300	480	350	200	200
Operating Temperature (°C)	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Last Time Buy	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH110N10P (IXYS) This substitute offers the highest current rating at 110A, exceeding the IXTH67N10 requirement of 67A. The device maintains the same 100V Vdss rating and features improved on-state resistance of 15 mOhm. The IXFH110N10P carries Active product status, ensuring continued availability and supply chain support. All compliance certifications match the original part. This substitute is suitable for applications requiring higher current capacity or improved thermal performance.

IXFH76N15T2 (IXYS) This substitute provides a higher voltage rating of 150V with 76A continuous drain current, exceeding both voltage and current specifications of the IXTH67N10. The on-state resistance of 22 mOhm is comparable to the original part. The device is Active in product status and maintains full RoHS3 compliance. This substitute is appropriate for applications where higher voltage headroom is required or where design margins must be increased.

HUF75639G3 (onsemi) This substitute operates at the same 100V Vdss rating with 56A continuous drain current, which is below the IXTH67N10 specification of 67A. The on-state resistance of 25 mOhm matches the original part specification. The device features the lowest input capacitance at 2000 pF, which may reduce gate drive requirements. Product status is Active with full RoHS3 compliance. This substitute is suitable only for applications where the 56A current rating is sufficient.

IRFP3710PBF (Infineon Technologies) This substitute maintains the 100V Vdss rating with 57A continuous drain current, which is below the IXTH67N10 specification of 67A. The on-state resistance of 25 mOhm matches the original part. The device carries Active product status and full RoHS3 compliance. This substitute is suitable only for applications where the 57A current rating is sufficient.

Frequently Asked Questions (FAQ)

Q: Can the IXFH110N10P directly replace the IXTH67N10 in my application? A: The IXFH110N10P is electrically compatible with the IXTH67N10 for applications requiring up to 67A. The higher current rating of 110A provides additional design margin. Both devices share the same 100V Vdss rating, ±20V gate voltage specification, and TO-247-3 package. Verify that your gate drive circuit can accommodate the lower gate charge requirement of 110 nC versus 260 nC of the original part.

Q: What is the difference between TO-247 and TO-247AD packages? A: Both are mechanically compatible TO-247-3 packages suitable for through-hole mounting. The TO-247AD variant used in the IXFH110N10P includes additional thermal and electrical enhancements. Pin compatibility and PCB footprint remain identical for direct substitution.

Q: Why do some substitutes have lower current ratings than the IXTH67N10? A: The HUF75639G3 and IRFP3710PBF have current ratings of 56A and 57A respectively, which are below the 67A specification of the IXTH67N10. These parts are listed as substitutes because they meet the 100V Vdss requirement and share the same package. However, they are suitable only for applications where the actual operating current does not exceed their rated values.

Q: How does gate charge affect my circuit design? A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTH67N10 requires 260 nC, while substitutes range from 97 nC to 190 nC. Lower gate charge reduces switching losses and may allow faster switching speeds. Verify that your gate drive circuit can supply the required charge within the desired switching time.

Q: Are all substitutes RoHS3 compliant? A: Yes, all listed substitutes are RoHS3 compliant, matching the compliance status of the IXTH67N10. All parts are also REACH Unaffected and carry EAR99 ECCN classification.

Q: What is the impact of different operating temperature ranges? A: The IXTH67N10 operates from -55°C to 150°C, while all substitutes extend to 175°C. The extended upper temperature limit of substitutes provides additional thermal margin but does not affect compatibility. Applications operating below 150°C will function identically with either the original or substitute parts.

Q: Can I use the IXFH76N15T2 in a 100V application? A: Yes. The IXFH76N15T2 is rated for 150V Vdss, which exceeds the 100V requirement. The higher voltage rating provides additional safety margin and does not negatively impact performance in 100V applications. The device is fully compatible with 100V circuit designs.

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