IXTH64N65X Equivalent & Substitute Parts

Part Overview

The IXTH64N65X is an N-Channel 650V 64A MOSFET in TO-247 packaging manufactured by IXYS. This device is classified as Last Time Buy, indicating discontinued production with limited inventory availability. The part operates across a wide temperature range (-55°C to 150°C) and delivers 890W maximum power dissipation, making it suitable for high-power switching applications requiring elevated voltage ratings.

Equivalent and substitute parts are necessary due to the Last Time Buy status of the IXTH64N65X. Alternative devices with comparable electrical and mechanical specifications ensure design continuity and supply chain reliability for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	64	A
On-State Resistance (Rds On Max) @ 32A, 10V	51	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	143	nC
Input Capacitance (Ciss) @ 25V	5500	pF
Maximum Power Dissipation (Tc)	890	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH64N65X is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V minimum
Continuous Drain Current (Id): 64A or greater
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
On-State Resistance (Rds On): Comparable performance at rated current and gate voltage

Substitute Classification:

Manufacturer Recommended Substitute: IXTH62N65X2 meets the voltage and temperature specifications with 62A continuous drain current, representing a near-equivalent device within the same IXYS Ultra X series family. The 2A reduction in current rating and 110W reduction in power dissipation are within acceptable tolerance for most applications.

Similar Substitutes: FCH47N60N and IPW60R060P7XKSA1 operate at reduced voltage ratings (600V) and lower current capabilities (47A and 48A respectively). These devices are suitable only for applications where the 650V rating is not mandatory and where the reduced current capacity accommodates the design requirements.

Parameter Comparison

Parameter	IXTH64N65X	IXTH62N65X2	FCH47N60N	IPW60R060P7XKSA1
Manufacturer	IXYS	IXYS	Fairchild Semiconductor	Infineon Technologies
Vdss (V)	650	650	600	600
Id @ 25°C (A)	64	62	47	48
Rds On Max @ 10V (mOhm)	51 @ 32A	52 @ 31A	62 @ 23.5A	60 @ 15.9A
Vgs(th) @ Specified Id (V)	5 @ 250µA	4.5 @ 4mA	4 @ 250µA	4 @ 800µA
Gate Charge Qg @ 10V (nC)	143	104	151	67
Ciss @ Specified Vds (pF)	5500 @ 25V	5940 @ 25V	6700 @ 100V	2895 @ 400V
Power Dissipation Max (W)	890	780	368	164
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Last Time Buy	Active	Active	Active

Engineering Selection Recommendations

IXTH62N65X2 (Manufacturer Recommended): The IXTH62N65X2 is the primary substitute for the IXTH64N65X. Both devices share identical voltage ratings (650V), matching operating temperature ranges, and compatible TO-247-3 packaging. The IXTH62N65X2 maintains Active product status with established supply availability. The 2A reduction in continuous drain current (62A versus 64A) and corresponding 110W reduction in power dissipation represent minor derating suitable for most applications. On-state resistance remains comparable (52mOhm versus 51mOhm at similar test conditions). This substitute is ROHS3 compliant and REACH unaffected, matching the compliance profile of the original part.

FCH47N60N (Similar Substitute): The FCH47N60N operates at 600V, representing a 50V reduction from the IXTH64N65X specification. Continuous drain current is reduced to 47A (27% lower than the original). This device is suitable only for applications where 600V voltage rating is acceptable and where the 47A current capacity meets design requirements. The FCH47N60N is ROHS3 compliant but carries REACH Affected status, differing from the original part's REACH Unaffected classification.

IPW60R060P7XKSA1 (Similar Substitute): The IPW60R060P7XKSA1 is a CoolMOS™ P7 series device with 600V rating and 48A continuous drain current. This represents the most significant derating in voltage (50V reduction) and current (25% reduction). The device exhibits substantially lower power dissipation (164W versus 890W), indicating reduced thermal performance capability. Gate charge is significantly lower (67nC versus 143nC), which may require gate driver circuit adjustments. This substitute is suitable only for applications with relaxed voltage and current requirements. The IPW60R060P7XKSA1 is ROHS3 compliant and REACH unaffected.

Frequently Asked Questions (FAQ)

Q: Can the IXTH62N65X2 directly replace the IXTH64N65X in all applications?

A: The IXTH62N65X2 is suitable for applications where the 62A continuous drain current and 780W power dissipation meet design requirements. Applications requiring the full 64A rating or 890W dissipation capability must perform thermal and current load analysis to confirm adequacy. Both devices share identical 650V voltage ratings, operating temperature ranges, and TO-247-3 packaging, enabling direct socket substitution from a mechanical and electrical interface perspective.

Q: What are the limitations of using FCH47N60N as a substitute?

A: The FCH47N60N operates at 600V, which is 50V below the IXTH64N65X specification. Applications designed for 650V operation must confirm that 600V rating provides adequate safety margin for the intended voltage environment. The 47A continuous current rating is 27% lower than the original part, requiring verification that application current demands do not exceed this limit. The device is suitable only for applications where both reduced voltage and current ratings are acceptable.

Q: Does the IPW60R060P7XKSA1 require gate driver modifications?

A: The IPW60R060P7XKSA1 exhibits significantly lower gate charge (67nC versus 143nC), which may affect gate driver performance characteristics. Applications utilizing fixed gate drive circuits designed for the IXTH64N65X gate charge specification should evaluate whether the reduced gate charge impacts switching speed, efficiency, or driver current requirements. Gate driver circuit analysis is necessary to confirm compatibility.

Q: Are all substitute parts available in the same packaging configuration?

A: All listed substitute parts utilize TO-247-3 through-hole packaging, matching the IXTH64N65X mechanical interface. Direct board-level substitution is possible without PCB layout modifications. Thermal management considerations may differ due to variations in power dissipation ratings, requiring thermal design review for each substitute.

Q: What compliance certifications apply to each substitute?

A: All substitute parts are ROHS3 compliant. The IXTH62N65X2 and IPW60R060P7XKSA1 are REACH unaffected, matching the original part's compliance status. The FCH47N60N carries REACH Affected status, which may impose additional regulatory requirements depending on application jurisdiction and end-use classification.

Q: How do on-state resistance values compare across substitutes?

A: On-state resistance values are measured at different current and voltage conditions across the device family. The IXTH64N65X specifies 51mOhm at 32A and 10V gate voltage. The IXTH62N65X2 specifies 52mOhm at 31A and 10V, representing comparable performance. The FCH47N60N specifies 62mOhm at 23.5A, and the IPW60R060P7XKSA1 specifies 60mOhm at 15.9A. Direct resistance comparison requires normalization to identical test conditions; however, the IXTH62N65X2 demonstrates the closest performance match to the original device.

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