IXTH64N10L2 Equivalent & Substitute Parts

Part Overview

The IXTH64N10L2 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 64A continuous drain current in a through-hole TO-247 package. Manufactured by IXYS, this device operates across a temperature range of -55°C to 150°C and dissipates up to 357W at the case temperature. The part is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including voltage rating, current capacity, on-resistance characteristics, and package form factor. Substitution becomes necessary due to inventory availability, supply chain considerations, or design optimization requirements.

Substiute Parts

IXTH64N10L2

IXYSIn Stock: 961IXTH64N10L2 Datasheet

Current PartRFQ

IRFP3710PBF

Infineon TechnologiesIn Stock: 29480IRFP3710PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTH64N10L2 are qualified based on the following critical parameters:

Voltage Rating Compatibility: The substitute must maintain the same Drain to Source Voltage (Vdss) of 100V to ensure safe operation within the same circuit topology.

Current Capacity: The substitute must support continuous drain current (Id) at or above the application requirement. The IXTH64N10L2 specifies 64A continuous drain current; substitutes with equal or greater current capacity maintain functional equivalence.

On-Resistance (Rds On): The substitute must demonstrate on-resistance characteristics that do not exceed the maximum specified value at the rated gate-source voltage (10V). Lower on-resistance values are acceptable and may improve thermal performance.

Gate Charge (Qg): The substitute must have gate charge specifications compatible with the drive circuit. Higher gate charge values require increased driver capability but do not prevent substitution if the driver is rated accordingly.

Package and Mounting: The substitute must use the same package form factor (TO-247-3) and mounting type (through-hole) to ensure mechanical and thermal compatibility with the printed circuit board layout.

Compliance and Product Status: The substitute must maintain Active product status and RoHS3 compliance to ensure long-term availability and regulatory conformance.

Parameter Comparison

Engineering Selection Recommendations

IRFP3710PBF as Substitute for IXTH64N10L2

The IRFP3710PBF qualifies as a functional substitute based on the following criteria:

Voltage Rating: Both devices are rated for 100V Vdss, ensuring compatibility within the same circuit voltage envelope.

Current Capacity: The IRFP3710PBF provides 57A continuous drain current, which is 89% of the IXTH64N10L2 rating of 64A. This represents a reduction in current capacity and is suitable only for applications where the actual operating current does not exceed 57A.

On-Resistance: The IRFP3710PBF exhibits 25 mOhm on-resistance at 28A and 10V gate-source voltage, compared to 32 mOhm at 32A and 10V for the IXTH64N10L2. The lower on-resistance of the substitute provides improved thermal efficiency.

Gate Charge: The IRFP3710PBF specifies 190 nC gate charge versus 100 nC for the IXTH64N10L2. The increased gate charge requires higher driver output capability but does not prevent substitution if the gate driver is rated for this charge level.

Power Dissipation: The IRFP3710PBF is rated for 200W maximum power dissipation at case temperature, compared to 357W for the IXTH64N10L2. Thermal design must account for this reduced dissipation rating.

Operating Temperature: The IRFP3710PBF extends the upper operating temperature to 175°C, compared to 150°C for the IXTH64N10L2, providing additional thermal margin in high-temperature applications.

Package and Compliance: Both devices use TO-247-3 through-hole packages and maintain RoHS3 compliance and Active product status, ensuring mechanical compatibility and long-term supply availability.

Frequently Asked Questions (FAQ)

Q: Can the IRFP3710PBF directly replace the IXTH64N10L2 in all applications?

A: The IRFP3710PBF is a functional substitute only when the application current requirement does not exceed 57A continuous drain current. The lower current rating and reduced power dissipation capability (200W versus 357W) must be evaluated against actual circuit operating conditions. Both devices share identical 100V voltage rating, TO-247-3 package, and ±20V gate voltage specification, ensuring mechanical and electrical interface compatibility.

Q: What is the impact of the higher gate charge (190 nC) in the IRFP3710PBF compared to the IXTH64N10L2 (100 nC)?

A: Gate charge directly affects switching speed and gate driver power dissipation. The IRFP3710PBF requires approximately 1.9 times more charge to switch compared to the IXTH64N10L2. The gate driver circuit must be capable of supplying this charge level. If the existing driver is current-limited or operates at the edge of its specification, the higher gate charge may result in slower switching transitions and increased switching losses.

Q: Are there thermal considerations when substituting the IRFP3710PBF for the IXTH64N10L2?

A: Yes. The IRFP3710PBF is rated for 200W maximum power dissipation at case temperature, while the IXTH64N10L2 is rated for 357W. If the application dissipates power approaching or exceeding 200W, the IRFP3710PBF will reach thermal limits sooner. Additionally, the lower on-resistance of the IRFP3710PBF (25 mOhm versus 32 mOhm) reduces conduction losses, partially offsetting the lower dissipation rating. Thermal analysis of the specific application is required to confirm adequate heat dissipation.

Q: Do both devices use the same gate drive voltage?

A: Yes. Both the IXTH64N10L2 and IRFP3710PBF specify a maximum gate-source voltage (Vgs) of ±20V and operate with a 10V drive voltage for maximum on-resistance specification. Gate threshold voltages differ slightly (4.5V for IXTH64N10L2 versus 4.0V for IRFP3710PBF), but both values fall within typical gate driver output ranges and do not prevent substitution.

Q: What is the difference in input capacitance between these devices?

A: The IXTH64N10L2 specifies 3620 pF input capacitance at 25V, while the IRFP3710PBF specifies 3000 pF. The lower input capacitance of the IRFP3710PBF results in faster gate voltage rise and fall times during switching transitions, potentially reducing switching losses and improving high-frequency performance.

Q: Are both devices RoHS3 compliant and in Active product status?

A: Yes. Both the IXTH64N10L2 and IRFP3710PBF are RoHS3 compliant and maintain Active product status, ensuring regulatory conformance and long-term supply availability from their respective manufacturers.

Q: Can the IRFP3710PBF be used in applications requiring the full 64A current rating of the IXTH64N10L2?

A: No. The IRFP3710PBF is rated for 57A continuous drain current at 25°C case temperature. Using this device in applications requiring sustained current above 57A will result in thermal runaway and device failure. The application current requirement must be verified against the 57A specification before substitution.