IXTH62N65X2 Equivalent & Substitute Parts

Part Overview

The IXTH62N65X2 is an N-Channel MOSFET rated for 650V drain-to-source voltage with 62A continuous drain current in a Through Hole TO-247 package. Manufactured by IXYS, this device belongs to the Ultra X2 series and is classified as Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining compatible package configurations and thermal characteristics. The IXTH62N65X2 operates across a wide temperature range of -55°C to 150°C (TJ) and dissipates up to 780W at case temperature, making it suitable for high-power switching applications requiring robust voltage handling.

Substiute Parts

IXTH62N65X2

IXYSIn Stock: 826IXTH62N65X2 Datasheet

Current PartRFQ

IPW60R060P7XKSA1

Infineon TechnologiesIn Stock: 3220IPW60R060P7XKSA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH62N65X2 is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must support the application's maximum drain-to-source voltage requirement. The IXTH62N65X2 operates at 650V; substitute parts with lower voltage ratings (such as 600V) are acceptable only when the application circuit design does not exceed the substitute's voltage specification.

Current Handling Capacity: The continuous drain current rating must meet or exceed the circuit's steady-state current demand. The IXTH62N65X2 provides 62A continuous drain current; substitute parts with lower current ratings require verification that peak and average current demands remain within the substitute's specification.

On-State Resistance (Rds On): This parameter directly affects power dissipation and thermal performance. The IXTH62N65X2 specifies 52mOhm maximum at 31A and 10V gate-source voltage. Substitute parts with higher Rds On values increase conduction losses and require thermal management reassessment.

Package Configuration: Both the main part and substitute must use compatible Through Hole mounting in TO-247-3 package format to ensure mechanical fit and thermal interface compatibility.

Gate Charge and Input Capacitance: These parameters influence switching speed and driver circuit requirements. The IXTH62N65X2 specifies 104nC gate charge and 5940pF input capacitance; substitute parts with significantly different values may require driver circuit optimization.

Thermal Rating: Maximum power dissipation capability must support the application's thermal load. The IXTH62N65X2 dissipates 780W at case temperature.

Temperature Range: Operating temperature specifications must encompass the application environment. The IXTH62N65X2 operates from -55°C to 150°C (TJ).

Parameter Comparison

Engineering Selection Recommendations

Compliance and Regulatory Status: Both the IXTH62N65X2 and IPW60R060P7XKSA1 maintain Active product status with full RoHS3 compliance, REACH Unaffected designation, and identical Moisture Sensitivity Level (MSL) classification of 1 (Unlimited). Both devices carry EAR99 ECCN classification and identical HTSUS codes (8541.29.0095), confirming regulatory equivalence for procurement and supply chain purposes.

Voltage Rating Consideration: The IXTH62N65X2 operates at 650V Vdss, while the IPW60R060P7XKSA1 is rated for 600V Vdss. The 50V difference represents a 7.7% reduction in voltage margin. Selection of the substitute requires confirmation that the application circuit design maintains adequate safety margin below 600V under all operating conditions, including transient overvoltage events.

Current Capacity Differential: The IXTH62N65X2 provides 62A continuous drain current compared to 48A for the IPW60R060P7XKSA1, representing a 22.6% reduction in current capacity. The substitute is suitable only for applications where steady-state and peak current demands remain within 48A specification.

Thermal Performance: The IXTH62N65X2 dissipates 780W at case temperature, while the IPW60R060P7XKSA1 dissipates 164W. This 79% reduction in power dissipation capability reflects the lower current rating and indicates the substitute is appropriate for lower-power circuit implementations. Applications requiring the full 780W thermal capacity of the main part cannot use this substitute.

On-State Resistance: The IXTH62N65X2 specifies 52mOhm maximum at 31A and 10V, while the IPW60R060P7XKSA1 specifies 60mOhm at 15.9A and 10V. The substitute exhibits higher on-state resistance, resulting in increased conduction losses at equivalent current levels.

Gate Drive Characteristics: The IPW60R060P7XKSA1 exhibits lower gate charge (67nC versus 104nC) and lower input capacitance (2895pF versus 5940pF), indicating faster switching response and reduced driver circuit power requirements. The substitute's lower maximum gate-source voltage (±20V versus ±30V) requires confirmation that the application's gate drive circuit operates within this reduced specification.

Package and Thermal Interface: Both devices use identical TO-247-3 Through Hole packaging, ensuring mechanical compatibility and identical thermal interface characteristics with standard heatsink mounting configurations.

Frequently Asked Questions (FAQ)

Q: Can the IPW60R060P7XKSA1 directly replace the IXTH62N65X2 in existing circuit designs?

A: Direct replacement is not universally applicable. The substitute part exhibits lower voltage rating (600V versus 650V), reduced current capacity (48A versus 62A), and significantly lower power dissipation capability (164W versus 780W). Replacement is permissible only when the application circuit operates within all three of these reduced specifications. Circuit redesign or thermal management modifications may be required.

Q: What are the implications of the 50V voltage rating difference?

A: The IXTH62N65X2 provides 650V Vdss rating, while the IPW60R060P7XKSA1 provides 600V Vdss. In applications where the circuit voltage approaches or exceeds 600V under normal or transient conditions, the substitute part is not suitable. The 50V margin reduction must be evaluated against the application's maximum voltage specification, including transient overvoltage events and circuit protection margins.

Q: How does the 22.6% reduction in continuous drain current affect substitution decisions?

A: The IXTH62N65X2 supports 62A continuous drain current, while the IPW60R060P7XKSA1 supports 48A. Applications requiring continuous current above 48A cannot use the substitute. For applications operating at or below 48A, the substitute is current-compatible. Peak current transients must also remain within the substitute's specification.

Q: Are the gate drive circuit requirements identical between these two parts?

A: No. The IPW60R060P7XKSA1 exhibits lower gate charge (67nC versus 104nC) and lower input capacitance (2895pF versus 5940pF), resulting in reduced gate drive power requirements and potentially faster switching response. The substitute's maximum gate-source voltage is ±20V compared to ±30V for the main part. Gate drive circuits designed for the IXTH62N65X2 may require optimization for the substitute's lower capacitance and voltage specifications.

Q: What thermal management considerations apply when using the IPW60R060P7XKSA1 as a substitute?

A: The IPW60R060P7XKSA1 dissipates 164W at case temperature compared to 780W for the IXTH62N65X2. This 79% reduction in power dissipation capability indicates the substitute is appropriate for lower-power applications. Applications designed around the full 780W thermal capacity of the main part cannot use this substitute without significant circuit redesign to reduce power dissipation.

Q: Are both parts available in identical package configurations?

A: Yes. Both the IXTH62N65X2 and IPW60R060P7XKSA1 use TO-247-3 Through Hole packaging, ensuring identical mechanical fit and thermal interface compatibility with standard heatsink mounting configurations.

Q: Do both parts maintain equivalent regulatory and compliance status?

A: Yes. Both devices are Active product status, RoHS3 compliant, REACH Unaffected, carry identical EAR99 ECCN classification, and share identical HTSUS codes (8541.29.0095). Moisture Sensitivity Level (MSL) is 1 (Unlimited) for both parts, indicating no moisture sensitivity restrictions.

Q: What is the significance of the lower on-state resistance in the IPW60R060P7XKSA1 at its rated current?

A: The IPW60R060P7XKSA1 specifies 60mOhm at 15.9A and 10V, compared to 52mOhm at 31A and 10V for the IXTH62N65X2. Direct resistance comparison at different current levels is not applicable. At the substitute's rated current of 15.9A, the 60mOhm specification represents the device's on-state performance. Conduction losses must be calculated based on the actual operating current within the substitute's 48A maximum specification.