IXTH60N25 Equivalent & Substitute Parts

Part Overview

The IXTH60N25 is an N-Channel MOSFET rated for 250V drain-to-source voltage with 60A continuous drain current in a TO-247 through-hole package. Manufactured by IXYS, this device is classified as obsolete product status. Due to its obsolete classification and limited ongoing availability from the original manufacturer, identification of equivalent substitute components is necessary for design continuity and procurement planning. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package and mounting requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	250	V
Continuous Drain Current (Id) @ 25°C	60	A
On-State Resistance (Rds On Max) @ 15A, 10V	46	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	164	nC
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTH60N25 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 250V
Continuous Drain Current (Id) must meet or exceed 60A at 25°C
On-State Resistance (Rds On) must not exceed the specified maximum to ensure thermal performance
Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuits
Power Dissipation capability must support the thermal load of the application

Mechanical Compatibility Criteria:

Package type must be TO-247 or equivalent through-hole configuration
Mounting type must be through-hole to maintain PCB assembly compatibility
Pin configuration must match TO-247-3 standard

Regulatory and Compliance Criteria:

RoHS3 compliance required
REACH unaffected status required
Moisture Sensitivity Level (MSL) of 1 (Unlimited) required

Substitute parts are grouped based on whether they maintain these parameters within acceptable engineering tolerances while accommodating variations in product status and availability.

Parameter Comparison

Parameter	IXTH60N25	STW52NK25Z	IRFP4229PBF	STP50NF25
Manufacturer	IXYS	STMicroelectronics	Infineon Technologies	STMicroelectronics
Vdss (V)	250	250	250	250
Id @ 25°C (A)	60	52	44	45
Rds On Max @ 10V (mOhm)	46 @ 15A	45 @ 26A	46 @ 26A	69 @ 22A
Vgs(th) Max @ 250µA (V)	4	4.5	5	4
Gate Charge Qg Max @ 10V (nC)	164	160	110	68.2
Power Dissipation Max (W)	400	300	310	160
Operating Temperature Range (°C)	-55 to 150	-55 to 150	-40 to 175	-55 to 150
Package Type	TO-247-3	TO-247-3	TO-247-3	TO-220-3
Product Status	Obsolete	Not For New Designs	Active	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

STW52NK25Z (STMicroelectronics)

The STW52NK25Z provides the closest electrical match to the IXTH60N25 with 52A continuous drain current, matching Vdss at 250V, and equivalent Rds On performance. The TO-247-3 package maintains direct mechanical compatibility. However, this part carries "Not For New Designs" product status, limiting its suitability for new development. It remains suitable for replacement in existing systems where the IXTH60N25 requires substitution.

IRFP4229PBF (Infineon Technologies)

The IRFP4229PBF is an active product with 44A continuous drain current and 250V Vdss rating. The TO-247-3 package provides direct mechanical compatibility. This part exhibits lower gate charge (110 nC) compared to the IXTH60N25 (164 nC), resulting in faster switching characteristics. Power dissipation is rated at 310W, which is lower than the original 400W specification. The extended operating temperature range (-40 to 175°C) provides additional thermal margin. Active product status ensures long-term availability and supply chain continuity.

STP50NF25 (STMicroelectronics)

The STP50NF25 is an active product with 45A continuous drain current and 250V Vdss rating. This part uses a TO-220-3 package, which differs from the original TO-247-3 configuration. The TO-220 package has different thermal and mechanical characteristics, requiring PCB layout modifications. Power dissipation is limited to 160W, significantly lower than the IXTH60N25 specification. This part is suitable only when thermal constraints permit reduced power handling and PCB layout can accommodate the different package footprint.

For new designs and systems requiring direct replacement without layout modification, the IRFP4229PBF is the recommended substitute due to active product status and TO-247-3 package compatibility. For existing systems where the STW52NK25Z is already qualified, continued use is acceptable despite "Not For New Designs" status.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4229PBF directly replace the IXTH60N25 without circuit modifications?

A: The IRFP4229PBF maintains electrical compatibility across Vdss (250V), gate threshold voltage (5V vs. 4V), and Rds On performance (46 mOhm). The TO-247-3 package provides identical mechanical compatibility. However, the lower gate charge (110 nC vs. 164 nC) results in faster switching response. Gate drive circuits designed for the IXTH60N25 will function with the IRFP4229PBF without modification, though switching transients may differ slightly.

Q: Why is the STP50NF25 listed as a substitute if it uses a different package?

A: The STP50NF25 meets the electrical requirements for Vdss and current rating. However, the TO-220 package differs mechanically from the TO-247-3 original. This part is suitable only when PCB layout can be modified to accommodate the different footprint and when the reduced power dissipation rating (160W) is acceptable for the application.

Q: What is the significance of the "Not For New Designs" status on the STW52NK25Z?

A: "Not For New Designs" indicates that the manufacturer does not recommend this part for new product development. However, it remains available for replacement and repair of existing systems. The STW52NK25Z provides the closest electrical match to the IXTH60N25 and is suitable for direct substitution in legacy systems.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (STW52NK25Z, IRFP4229PBF, and STP50NF25) carry RoHS3 compliance certification and REACH unaffected status, matching the regulatory requirements of the IXTH60N25.

Q: How does the lower power dissipation rating of the IRFP4229PBF (310W vs. 400W) affect substitution?

A: The power dissipation rating reflects the maximum thermal capability under specified conditions. The IRFP4229PBF can handle 310W continuously at the case temperature limit. If the application requires sustained power dissipation exceeding 310W, thermal management must be evaluated. For most applications operating below this threshold, the lower rating does not impact performance.

Q: What is the impact of different gate charge specifications on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTH60N25 requires 164 nC, while the IRFP4229PBF requires 110 nC. Lower gate charge results in faster switching transitions and reduced gate drive power consumption. Existing gate drive circuits will function with both parts; however, switching speed and EMI characteristics may differ slightly.

Q: Can the STW52NK25Z be used in new designs despite its "Not For New Designs" status?

A: "Not For New Designs" is a manufacturer recommendation against using this part in new product development. While the part remains available and functional, manufacturers typically apply this status when transitioning to newer alternatives or when long-term availability cannot be guaranteed. For new designs, the IRFP4229PBF (active status) is the preferred choice.

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