IXTH60N20L2 Equivalent & Substitute Parts

Part Overview

The IXTH60N20L2 is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 60A continuous drain current at 25°C. This device is part of the Linear L2™ series and is housed in a TO-247 through-hole package. The component is actively produced and fully compliant with RoHS3 and REACH regulations.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining mechanical compatibility and regulatory compliance. The IXTH60N20L2 operates across a wide temperature range from -55°C to 150°C and dissipates up to 540W at the case temperature, making it suitable for high-power switching applications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	60	A
On-State Resistance (Rds On) @ 30A, 10V	45	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	255	nC
Input Capacitance (Ciss) @ 25V	10500	pF
Power Dissipation (Max)	540	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitute parts for the IXTH60N20L2 are qualified based on the following electrical and mechanical criteria:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 200V
Continuous Drain Current (Id) must support the application requirements
On-State Resistance (Rds On) must be within acceptable limits for thermal and efficiency performance
Gate Threshold Voltage (Vgs(th)) must fall within compatible switching thresholds
Gate Charge (Qg) and Input Capacitance (Ciss) must be compatible with gate drive circuitry
Operating temperature range must encompass the application environment

Mechanical Compatibility Requirements:

Package type must be TO-247 or TO-247AC (mechanically and electrically compatible pinouts)
Through-hole mounting configuration must be maintained
Regulatory compliance (RoHS3, REACH) must be satisfied

The identified substitute parts meet these criteria while maintaining N-Channel MOSFET technology and Metal Oxide construction. Both substitute parts operate at the same 200V Vdss rating and are housed in compatible TO-247 package variants.

Parameter Comparison

Parameter	IXTH60N20L2	IRFP260MPBF	IRFP260NPBF	Unit
Manufacturer	IXYS	Infineon Technologies	Infineon Technologies	—
Series	Linear L2™	HEXFET®	HEXFET®	—
FET Type	N-Channel	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	200	200	200	V
Continuous Drain Current (Id) @ 25°C	60	50	50	A
On-State Resistance (Rds On)	45 @ 30A, 10V	40 @ 28A, 10V	40 @ 28A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	4.0	4.0	V
Gate Charge (Qg) @ 10V	255	234	234	nC
Input Capacitance (Ciss) @ 25V	10500	4057	4057	pF
Gate Voltage (Vgs) Max	±20	±20	±20	V
Power Dissipation (Max)	540	300	300	W
Operating Temperature Range	-55 to 150	-55 to 175	-55 to 175	°C
Package Type	TO-247 (IXTH)	TO-247AC	TO-247AC	—
Mounting Type	Through Hole	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—
Product Status	Active	Active	Active	—

Engineering Selection Recommendations

IXTH60N20L2 (Primary Component)

The IXTH60N20L2 remains the primary selection when the full 60A continuous drain current and 540W power dissipation capability are required. This device offers the highest current rating and thermal performance among the three options. All regulatory certifications are current and the component maintains active production status.

IRFP260MPBF and IRFP260NPBF (Substitute Options)

Both Infineon HEXFET® devices (IRFP260MPBF and IRFP260NPBF) are qualified substitutes for applications where the continuous drain current requirement does not exceed 50A. These parts share identical electrical specifications and differ only in manufacturing lot tracking. Key considerations include:

Both devices meet the 200V Vdss requirement
Reduced on-state resistance (40mOhm versus 45mOhm) provides improved efficiency
Lower gate charge (234nC versus 255nC) enables faster switching
Significantly lower input capacitance (4057pF versus 10500pF) reduces gate drive power requirements
Extended operating temperature range (-55°C to 175°C versus -55°C to 150°C) provides additional thermal margin
Reduced power dissipation rating (300W versus 540W) requires thermal design verification for high-power applications
TO-247AC package maintains mechanical and electrical compatibility with TO-247 pinout

Both substitute parts carry active product status and full RoHS3 and REACH compliance. Selection between IRFP260MPBF and IRFP260NPBF depends on inventory availability and supply chain requirements, as electrical performance is identical.

Frequently Asked Questions (FAQ)

Q: Can IRFP260MPBF or IRFP260NPBF be used as direct replacements for IXTH60N20L2?

A: These parts are qualified substitutes for applications where continuous drain current does not exceed 50A. The 200V Vdss rating, gate threshold voltage, and maximum gate voltage specifications are compatible. However, the reduced power dissipation rating (300W versus 540W) must be evaluated against thermal requirements. TO-247 and TO-247AC packages are mechanically and electrically compatible.

Q: What are the key differences between IXTH60N20L2 and the Infineon substitutes?

A: The primary differences are continuous drain current (60A versus 50A), power dissipation (540W versus 300W), input capacitance (10500pF versus 4057pF), and operating temperature upper limit (150°C versus 175°C). The Infineon parts offer lower on-state resistance and gate charge, which may improve switching performance in some applications.

Q: Are the TO-247 and TO-247AC packages interchangeable?

A: Yes. Both packages use the same three-pin through-hole configuration with identical pinout and mechanical dimensions. The TO-247AC designation indicates an alternate supplier package variant. Mounting and thermal interface requirements remain equivalent.

Q: What is the significance of the lower input capacitance in the Infineon parts?

A: Lower input capacitance (Ciss) reduces the charge required to drive the gate, resulting in lower gate drive power consumption and potentially faster switching transitions. This is beneficial in high-frequency switching applications and reduces demands on gate drive circuitry.

Q: Do all three parts meet current regulatory requirements?

A: Yes. IXTH60N20L2, IRFP260MPBF, and IRFP260NPBF are all RoHS3 compliant and REACH unaffected. All three maintain active production status with current regulatory certifications.

Q: Which part should be selected for maximum thermal performance?

A: IXTH60N20L2 is specified for 540W power dissipation at case temperature, compared to 300W for the Infineon substitutes. For applications requiring maximum thermal headroom, IXTH60N20L2 is the appropriate selection.

Q: Are IRFP260MPBF and IRFP260NPBF electrically identical?

A: Yes. Both parts have identical electrical specifications. The designation difference (M versus N) reflects manufacturing lot tracking and supplier package variants. Selection between them is based on inventory availability and supply chain considerations.

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