IXTH5N100A Equivalent & Substitute Parts

Part Overview

The IXTH5N100A is an N-Channel 1000 V, 5A (Tc) MOSFET manufactured by IXYS in a Through Hole TO-247 package with 180W maximum power dissipation. This device is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Active alternative parts from IXYS and STMicroelectronics are available with comparable or enhanced electrical characteristics within the 1000V voltage class.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	5	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	2	Ohm @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	130	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	2600	pF @ 25V
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXTH5N100A is determined by the following critical parameters: Drain to Source Voltage (Vdss) rating of 1000V, N-Channel FET technology, Through Hole TO-247 package configuration, and operating temperature range of -55°C to 150°C. Substitute parts must maintain these core electrical and mechanical specifications to ensure functional compatibility within existing circuit designs.

Substitute parts are grouped into two categories:

Manufacturer Recommended Substitute (Lower Current Rating): IXTH3N100P operates at 3A continuous drain current, representing a current-reduced alternative within the same IXYS product family and package type.

Similar Alternatives (Comparable or Enhanced Current Ratings): IXFH7N100P, STW11NK100Z, STW5NK100Z, and STW7NK90Z provide equivalent or higher current handling capabilities. STW7NK90Z operates at 900V Vdss and represents a voltage-reduced alternative with comparable current performance.

Parameter Comparison

Parameter	IXTH5N100A	IXTH3N100P	IXFH7N100P	STW11NK100Z	STW5NK100Z	STW7NK90Z
Manufacturer	IXYS	IXYS	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	1000	1000	1000	1000	1000	900
Id @ 25°C (A Tc)	5	3	7	8.3	3.5	5.8
Rds On Max (Ohm)	2 @ 2.5A, 10V	4.8 @ 1.5A, 10V	1.9 @ 3.5A, 10V	1.38 @ 4.15A, 10V	3.7 @ 1.75A, 10V	2 @ 2.9A, 10V
Vgs(th) Max (V)	4.5 @ 250µA	4.5 @ 250µA	6 @ 1mA	4.5 @ 100µA	4.5 @ 100µA	4.5 @ 100µA
Qg Max (nC)	130 @ 10V	39 @ 10V	47 @ 10V	162 @ 10V	59 @ 10V	60.5 @ 10V
Ciss Max (pF)	2600 @ 25V	1100 @ 25V	2590 @ 25V	3500 @ 25V	1154 @ 25V	1350 @ 25V
Power Dissipation Max (W Tc)	180	125	300	230	125	140
Operating Temperature (°C TJ)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IXTH3N100P is the manufacturer-recommended substitute from IXYS. This part maintains identical Vdss (1000V), package type (TO-247-3), and operating temperature range. The reduced continuous drain current rating of 3A versus 5A requires circuit-level evaluation to confirm suitability for the target application. This part carries Active product status and full RoHS3 compliance.

IXFH7N100P provides enhanced current handling at 7A continuous drain current with superior on-state resistance (1.9 Ohm) and increased power dissipation capability (300W). This IXYS HiPerFET™ device maintains 1000V Vdss and TO-247-3 package compatibility. Active product status and full compliance certifications apply.

STW11NK100Z from STMicroelectronics offers the highest continuous drain current at 8.3A with the lowest on-state resistance (1.38 Ohm) among all alternatives. This SuperMESH™ technology device maintains 1000V Vdss and TO-247-3 package configuration. Active product status and full compliance certifications apply. Gate charge is elevated at 162 nC, requiring gate driver capability assessment.

STW5NK100Z provides a current-reduced alternative at 3.5A with 1000V Vdss and TO-247-3 package. This SuperMESH3™ device offers reduced gate charge (59 nC) and input capacitance compared to the main part. Active product status and full compliance certifications apply.

STW7NK90Z operates at 900V Vdss with 5.8A continuous drain current and 2 Ohm on-state resistance, matching the main part's Rds On specification. This SuperMESH™ device is suitable for applications where 900V voltage rating is acceptable. Active product status and full compliance certifications apply.

All substitute parts are RoHS3 compliant and REACH unaffected, meeting regulatory requirements equivalent to the main part.

Frequently Asked Questions (FAQ)

Q: Can IXTH3N100P directly replace IXTH5N100A in all applications?

A: IXTH3N100P maintains identical voltage rating (1000V), package type (TO-247-3), and operating temperature range. The continuous drain current is reduced from 5A to 3A. Direct replacement is possible only in applications where the circuit current demand does not exceed 3A at the specified operating conditions.

Q: What is the primary difference between IXFH7N100P and IXTH5N100A?

A: IXFH7N100P provides higher continuous drain current (7A versus 5A), superior on-state resistance (1.9 Ohm versus 2 Ohm), and increased power dissipation capability (300W versus 180W). Both devices maintain 1000V Vdss and TO-247-3 package compatibility. IXFH7N100P is suitable for applications requiring higher current handling or lower conduction losses.

Q: Why does STW11NK100Z have higher gate charge than IXTH5N100A?

A: STW11NK100Z gate charge is 162 nC compared to 130 nC for IXTH5N100A. This reflects the higher current rating (8.3A versus 5A) and larger die size. Gate driver circuits must provide sufficient charge delivery capability to meet switching frequency and performance requirements.

Q: Is STW7NK90Z suitable as a substitute if the application operates below 900V?

A: STW7NK90Z is rated for 900V Vdss, which is 100V lower than IXTH5N100A. This device is suitable only in applications where the maximum drain-source voltage does not exceed 900V. The 5.8A continuous current rating and 2 Ohm on-state resistance provide comparable performance to the main part within this voltage constraint.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts are packaged in TO-247-3 Through Hole configuration, maintaining mechanical and thermal interface compatibility with IXTH5N100A. Pin assignments follow standard TO-247-3 convention (Gate, Drain, Source).

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are RoHS3 compliant and REACH unaffected, matching the regulatory status of IXTH5N100A. These certifications ensure compatibility with current environmental and hazardous substance regulations.

Q: How does input capacitance affect device selection?

A: Input capacitance (Ciss) ranges from 1100 pF (IXTH3N100P) to 3500 pF (STW11NK100Z). Higher capacitance increases gate charge requirements and switching losses. Gate driver design must accommodate the selected device's capacitance to achieve target switching frequency and efficiency.

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