IXTH52N65X N-Channel 650V 52A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH52N65X is an N-Channel 650V 52A MOSFET manufactured by IXYS in the Ultra X series, housed in a TO-247 through-hole package. This device is classified as Last Time Buy, indicating that the original manufacturer has discontinued or will discontinue production. The identification of equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term product availability for applications requiring high-voltage, high-current switching performance.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	52	A
On-State Resistance (Rds On Max) @ Id, Vgs	68 mOhm @ 26A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	113	nC @ 10V
Power Dissipation (Max)	660	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH52N65X is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 650V minimum
Continuous Drain Current (Id): 48A or greater at 25°C
Package Type: TO-247-3 through-hole configuration
Gate Drive Voltage: 10V nominal
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance and REACH Unaffected status

Substitution Logic: Parts are classified as direct manufacturer-recommended substitutes or similar alternatives based on voltage rating equivalence, current rating compatibility, and thermal performance. The IXTH52N65X operates at 52A continuous drain current; substitute parts with 48A or higher ratings maintain functional compatibility within the same voltage class. All substitute candidates maintain the TO-247-3 package footprint, ensuring mechanical and thermal interface compatibility. Gate charge and on-state resistance variations are acceptable within the specified operating parameters.

Parameter Comparison

Parameter	IXTH52N65X	IXTH48N65X2	FCH47N60N	IPW60R060P7XKSA1	STW56N65DM2	STW57N65M5
Manufacturer	IXYS	IXYS	Fairchild Semiconductor	Infineon Technologies	STMicroelectronics	STMicroelectronics
Vdss (V)	650	650	600	600	650	650
Id @ 25°C (A)	52	48	47	48	48	42
Rds On Max @ Id, Vgs (mOhm)	68 @ 26A, 10V	68 @ 24A, 10V	62 @ 23.5A, 10V	60 @ 15.9A, 10V	65 @ 24A, 10V	63 @ 21A, 10V
Vgs(th) Max @ Id (V)	5 @ 250µA	4.5 @ 4mA	4 @ 250µA	4 @ 800µA	5 @ 250µA	5 @ 250µA
Qg Max @ Vgs (nC)	113 @ 10V	77 @ 10V	151 @ 10V	67 @ 10V	88 @ 10V	98 @ 10V
Ciss Max @ Vds (pF)	4350 @ 25V	4420 @ 25V	6700 @ 100V	2895 @ 400V	4100 @ 100V	4200 @ 100V
Power Dissipation Max (W)	660	660	368	164	360	250
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Last Time Buy	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Affected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IXTH48N65X2 (IXYS - Manufacturer Recommended Substitute)

The IXTH48N65X2 is the primary recommended substitute for the IXTH52N65X. Both devices are manufactured by IXYS and share identical voltage ratings (650V), package configuration (TO-247-3), and thermal performance (660W maximum power dissipation). The IXTH48N65X2 operates at 48A continuous drain current, representing a 7.7% reduction from the original 52A specification. This device is in Active product status, ensuring long-term availability and supply chain stability. RoHS3 compliance and REACH Unaffected status maintain regulatory alignment with the original part.

STW56N65DM2 (STMicroelectronics - Voltage and Current Compatible)

The STW56N65DM2 provides equivalent 650V voltage rating and 48A continuous drain current performance. This STMicroelectronics device maintains TO-247-3 package compatibility and operates across the full -55°C to 150°C temperature range. On-state resistance of 65 mOhm at 24A, 10V is comparable to the original specification. The device is in Active product status with ROHS3 compliance and REACH Unaffected status. Power dissipation rating of 360W is lower than the original 660W specification and should be evaluated for thermal management in high-power applications.

IPW60R060P7XKSA1 (Infineon Technologies - Lower Voltage Alternative)

The IPW60R060P7XKSA1 operates at 600V drain-source voltage, representing a 50V reduction from the IXTH52N65X specification. This Infineon CoolMOS™ P7 device provides 48A continuous drain current and maintains TO-247-3 package compatibility. The device features lower on-state resistance (60 mOhm at 15.9A, 10V) and reduced gate charge (67 nC at 10V), offering improved switching efficiency. However, the reduced voltage rating limits application to systems with maximum operating voltages below 600V. Power dissipation rating of 164W is significantly lower and requires thermal design verification. RoHS3 compliance and REACH Unaffected status are maintained.

STW57N65M5 (STMicroelectronics - Reduced Current Alternative)

The STW57N65M5 maintains 650V voltage rating and TO-247-3 package configuration but operates at 42A continuous drain current, representing a 19.2% reduction from the original 52A specification. This STMicroelectronics MDmesh™ V device is suitable for applications with lower current requirements. Gate charge of 98 nC at 10V and on-state resistance of 63 mOhm at 21A, 10V provide acceptable switching characteristics. Power dissipation rating of 250W is substantially lower than the original specification. The device is in Active product status with ROHS3 compliance and REACH Unaffected status. High inventory availability (19,143 pieces) supports supply chain continuity.

FCH47N60N (Fairchild Semiconductor - Lower Voltage Alternative)

The FCH47N60N operates at 600V drain-source voltage and 47A continuous drain current, providing reduced voltage and current ratings compared to the IXTH52N65X. This Fairchild SupreMOS™ device maintains TO-247-3 package compatibility and operates across the -55°C to 150°C temperature range. On-state resistance of 62 mOhm at 23.5A, 10V is comparable to the original specification. However, gate charge of 151 nC at 10V is significantly higher, resulting in increased switching losses. Power dissipation rating of 368W is lower than the original specification. REACH Affected status indicates potential regulatory considerations for certain applications. This device is in Active product status with ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can the IXTH48N65X2 directly replace the IXTH52N65X in all applications?

A: The IXTH48N65X2 is electrically and mechanically compatible with the IXTH52N65X in TO-247-3 package applications. The 48A continuous drain current rating is 7.7% lower than the original 52A specification. Applications operating at or below 48A continuous current experience no functional limitation. Applications requiring the full 52A capability must be evaluated for current margin and thermal performance with the substitute device.

Q: What is the significance of the 650V versus 600V voltage rating difference?

A: The IXTH52N65X is rated for 650V drain-source voltage. Substitute parts with 600V ratings (FCH47N60N and IPW60R060P7XKSA1) are suitable only for applications with maximum operating voltages not exceeding 600V. Systems designed for 650V operation require substitute parts with equivalent or higher voltage ratings to maintain design safety margins and reliability.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTH52N65X specifies 113 nC at 10V. Substitute parts with lower gate charge (IPW60R060P7XKSA1 at 67 nC, IXTH48N65X2 at 77 nC) reduce switching losses and improve efficiency. Substitute parts with higher gate charge (FCH47N60N at 151 nC) increase switching losses. Gate driver circuits must be verified for compatibility with the substitute device's gate charge specification.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are ROHS3 compliant. The FCH47N60N carries REACH Affected status, while all other substitutes maintain REACH Unaffected status. Applications subject to REACH regulations should prioritize substitutes with REACH Unaffected designation.

Q: What thermal considerations apply when selecting a substitute?

A: The IXTH52N65X specifies 660W maximum power dissipation. Substitute parts with lower power dissipation ratings (IPW60R060P7XKSA1 at 164W, STW57N65M5 at 250W, STW56N65DM2 at 360W, FCH47N60N at 368W) require thermal design verification. Applications operating at high power levels must ensure adequate heat dissipation through thermal management design (heatsinking, thermal interface materials, airflow) to maintain junction temperature within the -55°C to 150°C operating range.

Q: Can substitute parts with lower current ratings be used in high-current applications?

A: Substitute parts with continuous drain current ratings lower than the original 52A specification (STW57N65M5 at 42A, FCH47N60N at 47A, IXTH48N65X2 at 48A, IPW60R060P7XKSA1 at 48A, STW56N65DM2 at 48A) are suitable only for applications operating at or below their rated current. Applications requiring sustained operation above the substitute device's current rating will experience thermal stress, reduced reliability, and potential device failure. Current margin analysis is required before substitution.

Q: What is the impact of on-state resistance (Rds On) variation on circuit design?

A: On-state resistance determines conduction losses and heat generation during device operation. The IXTH52N65X specifies 68 mOhm at 26A, 10V. Substitute parts with lower Rds On (IPW60R060P7XKSA1 at 60 mOhm, FCH47N60N at 62 mOhm, STW57N65M5 at 63 mOhm, STW56N65DM2 at 65 mOhm) reduce conduction losses and improve efficiency. Substitute parts with equivalent or slightly higher Rds On maintain similar thermal performance. Circuit thermal analysis should account for the specific Rds On value of the selected substitute device.

Q: Is the TO-247-3 package footprint identical across all substitute parts?

A: All substitute parts are housed in TO-247-3 through-hole packages, ensuring mechanical and thermal interface compatibility with the original IXTH52N65X. PCB layout, heatsink mounting, and lead configuration remain unchanged. No PCB redesign is required for package compatibility.

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