IXTH50P085 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH50P085 is a P-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 85 V drain-to-source voltage with 50 A continuous drain current at 25°C. The device is packaged in a TO-247 through-hole configuration and dissipates up to 300 W at the case temperature. This component is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain functional compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the through-hole TO-247 package format.

Substiute Parts

IXTH50P085

IXYSIn Stock: 1114IXTH50P085 Datasheet

Current PartRFQ

IXTH50P10

IXYSIn Stock: 1924IXTH50P10 Datasheet

DirectRFQ

IXTH52P10P

IXYSIn Stock: 1015IXTH52P10P Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTH50P085 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: P-Channel topology
• Package: TO-247-3 through-hole configuration
• Mounting Type: Through Hole
• Operating Temperature Range: -55°C to 150°C (TJ)
• Power Dissipation: 300 W (Tc)

Electrical Performance Criteria:

• Drain to Source Voltage (Vdss): Equal to or greater than 85 V
• Continuous Drain Current (Id) @ 25°C: Equal to or greater than 50 A (Tc)
• On-Resistance (Rds On): Equal to or less than 55 mOhm @ specified conditions
• Gate-Source Voltage (Vgs): ±20 V maximum rating

The substitute parts IXTH50P10 and IXTH52P10P meet these criteria with enhanced voltage ratings (100 V) and equivalent or superior current handling and thermal characteristics. Both substitutes are active products with current manufacturing status and full compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

IXTH50P10 Selection Criteria:

The IXTH50P10 is a direct functional equivalent with identical current rating (50 A) and on-resistance specification (55 mOhm @ 25A, 10V). The primary distinction is an elevated Vdss rating of 100 V compared to the 85 V specification of the IXTH50P085. This higher voltage rating provides additional design margin in applications where the original 85 V specification is adequate. The IXTH50P10 carries active product status with RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, supporting modern manufacturing and supply chain requirements.

IXTH52P10P Selection Criteria:

The IXTH52P10P offers enhanced performance characteristics including 52 A continuous drain current (2 A higher than the original), reduced on-resistance (50 mOhm @ 52A, 10V), and significantly lower gate charge (60 nC versus 150 nC). The input capacitance is also reduced to 2845 pF. These improvements result in lower switching losses and faster gate response. The IXTH52P10P is designated as part of the PolarP™ series and carries active product status with RoHS3 compliance and MSL 1 (Unlimited) rating. The 100 V Vdss rating matches the IXTH50P10.

Both substitute parts are manufactured by IXYS, maintain TO-247-3 through-hole packaging, support the full -55°C to 150°C operating temperature range, and dissipate 300 W at case temperature. Selection between IXTH50P10 and IXTH52P10P depends on application requirements for switching speed and gate drive characteristics.

Frequently Asked Questions (FAQ)

Q: Can the IXTH50P10 directly replace the IXTH50P085 in existing designs?

A: Yes. The IXTH50P10 maintains identical P-Channel topology, TO-247-3 package, 50 A continuous drain current, 55 mOhm on-resistance, and 300 W power dissipation. The 100 V Vdss rating is higher than the original 85 V specification, providing additional voltage margin without affecting circuit operation in applications designed for 85 V operation.

Q: What is the primary advantage of the IXTH52P10P over the IXTH50P10?

A: The IXTH52P10P provides improved switching performance through reduced gate charge (60 nC versus 140 nC) and lower input capacitance (2845 pF versus 4350 pF). These characteristics result in faster switching transitions and reduced gate drive power requirements. The continuous drain current is also increased to 52 A, and on-resistance is reduced to 50 mOhm @ 52A, 10V.

Q: Are both substitute parts available in the same packaging format?

A: Yes. Both IXTH50P10 and IXTH52P10P are supplied in TO-247-3 through-hole packages, maintaining mechanical and thermal interface compatibility with the original IXTH50P085 design.

Q: What is the significance of the active product status for the substitute parts?

A: Active product status indicates current manufacturing and ongoing supply availability. The IXTH50P085 is classified as obsolete, making the active status of IXTH50P10 and IXTH52P10P critical for long-term design support and procurement continuity.

Q: Do the substitute parts meet current compliance requirements?

A: Yes. Both IXTH50P10 and IXTH52P10P carry RoHS3 compliance certification and REACH Unaffected status. The MSL 1 (Unlimited) moisture sensitivity rating supports modern surface mount and through-hole assembly processes without moisture bake-out requirements.

Q: How do the gate charge specifications affect circuit design?

A: Gate charge (Qg) determines the total charge required to switch the transistor from off to on state. The IXTH52P10P gate charge of 60 nC is significantly lower than the IXTH50P085 specification of 150 nC, reducing gate drive circuit power dissipation and enabling faster switching in high-frequency applications. The IXTH50P10 gate charge of 140 nC is nearly equivalent to the original specification.

Q: Can these parts be used interchangeably in the same circuit board layout?

A: Yes. All three parts share identical TO-247-3 package geometry and pin configuration, permitting direct substitution without PCB layout modifications. Thermal interface characteristics remain consistent across all three devices at 300 W maximum power dissipation.