IXTH50N30 Equivalent & Substitute Parts

Part Overview

The IXTH50N30 is an N-Channel MOSFET rated for 300V drain-to-source voltage with 50A continuous drain current in a TO-247 through-hole package. Manufactured by IXYS, this device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package variations.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	50	A
On-State Resistance (Rds On Max) @ Id, Vgs	65 mOhm @ 25A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	165	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss Max) @ Vds	4400	pF @ 25V
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IXTH50N30 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must equal or exceed 300V
Continuous Drain Current (Id) must meet or exceed 50A at 25°C
On-State Resistance (Rds On) must not significantly exceed 65 mOhm to maintain thermal performance
Gate Threshold Voltage (Vgs(th)) must remain within ±30V maximum gate voltage specification
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Requirements:

Through-hole mounting type required
Package footprint compatibility with TO-247 or equivalent pinout

Regulatory Compliance:

RoHS3 compliance required
REACH unaffected status required

Substitute parts are grouped into two categories: direct equivalents with identical or superior electrical ratings in compatible packages, and functional alternatives with enhanced current or power ratings that maintain voltage and thermal specifications.

Parameter Comparison

Parameter	IXTH50N30	AOK60N30L	FDA59N30	STW46NF30
Manufacturer	IXYS	Alpha & Omega Semiconductor Inc.	onsemi	STMicroelectronics
Product Status	Obsolete	Obsolete	Active	Active
Vdss (V)	300	300	300	300
Id @ 25°C (A)	50	60	59	42
Rds On Max (mOhm)	65 @ 25A, 10V	56 @ 30A, 10V	56 @ 29.5A, 10V	75 @ 17A, 10V
Vgs(th) Max @ 250µA (V)	4	4.1	5	4
Qg Max @ 10V (nC)	165	106	100	90
Vgs Max (V)	±30	±30	±30	±20
Ciss Max @ 25V (pF)	4400	5330	4670	3200
Power Dissipation Max (W)	400	658	500	300
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package Type	TO-247-3	TO-247-3	TO-3P-3 / SC-65-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

AOK60N30L (Alpha & Omega Semiconductor Inc.)

The AOK60N30L provides enhanced current rating (60A versus 50A) with improved on-state resistance (56 mOhm versus 65 mOhm) and reduced gate charge (106 nC versus 165 nC). Package compatibility is direct TO-247-3. However, this device carries obsolete product status. RoHS3 compliance and REACH unaffected status are maintained. Selection is appropriate for applications requiring higher current capacity within the same voltage class.

FDA59N30 (onsemi)

The FDA59N30 is classified as active product status, providing long-term availability and supply chain stability. Current rating of 59A exceeds the IXTH50N30 requirement with improved on-state resistance (56 mOhm) and significantly reduced gate charge (100 nC). Operating temperature range matches the original specification. Package configuration is TO-3PN (SC-65-3), which differs from TO-247-3 and requires PCB layout modification. RoHS3 compliance and REACH unaffected status are confirmed. Selection is appropriate for new designs prioritizing active product availability despite package change requirements.

STW46NF30 (STMicroelectronics)

The STW46NF30 is classified as active product status with extensive inventory availability (625,701 pieces). Current rating of 42A is below the IXTH50N30 specification (50A), making this device suitable only for applications with reduced current requirements. On-state resistance is higher (75 mOhm), and gate charge is lower (90 nC). Package is TO-247-3 with direct compatibility. Maximum gate voltage is limited to ±20V versus ±30V. Operating temperature extends to 175°C. RoHS3 compliance is confirmed. Selection is appropriate only when application current requirements do not exceed 42A.

Frequently Asked Questions (FAQ)

Q: Can the AOK60N30L directly replace the IXTH50N30 in existing designs?

A: The AOK60N30L maintains identical package configuration (TO-247-3), voltage rating (300V), and operating temperature range (-55°C to 150°C). Electrical parameters are compatible or superior. However, both devices carry obsolete product status. Direct substitution is electrically feasible without PCB modification.

Q: Why does the FDA59N30 require PCB layout changes?

A: The FDA59N30 uses TO-3PN package (SC-65-3) instead of TO-247-3. Pin configuration and mounting footprint differ, requiring PCB redesign. Electrical performance is superior, but mechanical integration differs from the original IXTH50N30.

Q: Is the STW46NF30 suitable for all IXTH50N30 applications?

A: The STW46NF30 has reduced continuous drain current (42A versus 50A) and higher on-state resistance (75 mOhm versus 65 mOhm). It is suitable only for applications where continuous drain current does not exceed 42A. Maximum gate voltage is also limited to ±20V. Verify application requirements before selection.

Q: What is the primary advantage of selecting an active product status device?

A: Active product status devices, such as FDA59N30 and STW46NF30, provide long-term manufacturing commitment, stable supply chains, and ongoing technical support. Obsolete devices may face availability constraints and supply discontinuation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (AOK60N30L, FDA59N30, and STW46NF30) are RoHS3 compliant and REACH unaffected, matching the regulatory status of the IXTH50N30.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. Lower gate charge (FDA59N30 at 100 nC, STW46NF30 at 90 nC) reduces driver power requirements compared to the IXTH50N30 (165 nC). Higher gate charge (AOK60N30L at 106 nC) remains acceptable for most driver circuits. Verify driver specifications for compatibility.

Q: What is the impact of on-state resistance variation on thermal performance?

A: On-state resistance directly affects power dissipation at rated current. Lower resistance (AOK60N30L and FDA59N30 at 56 mOhm) reduces heat generation compared to IXTH50N30 (65 mOhm) and STW46NF30 (75 mOhm). Applications with thermal constraints benefit from lower resistance devices. Verify thermal design margins for each candidate.

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