IXTH50N20 Equivalent & Substitute Parts

Part Overview

The IXTH50N20 is an N-Channel 200V 50A MOSFET in TO-247 through-hole packaging, manufactured by IXYS as part of the MegaMOS™ series. This device is rated for 300W power dissipation and operates across a temperature range of -55°C to 150°C. The IXTH50N20 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	50	A
Rds On (Max) @ 25A, 10V	45	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	220	nC
Input Capacitance (Ciss) @ 25V	4600	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IXTH50N20 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 200V
Continuous Drain Current (Id) must meet or exceed 50A at 25°C
Gate Threshold Voltage (Vgs(th)) must be compatible with 4V nominal operation
Maximum Gate Voltage (Vgs) must accommodate ±20V operation
Rds On characteristics must support the application's power dissipation requirements

Mechanical Compatibility Criteria:

Mounting type must be through-hole
Package must be TO-247 variant (TO-247-3, TO-247AC, TO-247AD, or TO-247 [B])
RoHS3 compliance required

Substitute parts are grouped into three categories based on their relationship to the IXTH50N20:

MFR Recommended: IXFH74N20P offers higher current rating (74A) and improved power dissipation (480W) while maintaining identical voltage specifications and compatible gate characteristics.

Upgrade: IRFP260NPBF provides identical electrical specifications with extended operating temperature range (-55°C to 175°C) and active product status.

Similar: APT20M45BVRG, APT20M45BVFRG, IRFP260MPBF, and STW75NF20 maintain core voltage and current specifications with variations in gate charge, on-resistance, and power dissipation characteristics.

Parameter Comparison

Parameter	IXTH50N20	IXFH74N20P	IRFP260NPBF	APT20M45BVRG	IRFP260MPBF	STW75NF20
Manufacturer	IXYS	IXYS	Infineon	Microchip	Infineon	STMicroelectronics
Vdss (V)	200	200	200	200	200	200
Id @ 25°C (A)	50	74	50	56	50	75
Rds On (Max) (mOhm)	45 @ 25A	34 @ 37A	40 @ 28A	45 @ 500mA	40 @ 28A	34 @ 37A
Vgs(th) (V)	4 @ 250µA	5 @ 4mA	4 @ 250µA	4 @ 1mA	4 @ 250µA	4 @ 250µA
Qg @ 10V (nC)	220	107	234	195	234	84
Ciss @ 25V (pF)	4600	3300	4057	4860	4057	3260
Power Dissipation (W)	300	480	300	300	300	190
Operating Temp Range (°C)	-55 to 150	-55 to 175	-55 to 175	-55 to 150	-55 to 175	-50 to 150
Package	TO-247-3	TO-247AD	TO-247AC	TO-247 [B]	TO-247AC	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications): IRFP260NPBF and IRFP260MPBF are direct electrical equivalents to the IXTH50N20, maintaining 200V/50A ratings with identical power dissipation (300W). Both are active products with RoHS3 compliance and extended operating temperature ranges to 175°C. These parts are suitable for applications requiring no design modification.

For Performance Enhancement: IXFH74N20P is the manufacturer-recommended upgrade, offering 48% higher current capacity (74A) and 60% higher power dissipation (480W) while maintaining 200V voltage rating and compatible gate characteristics. This part is active and RoHS3 compliant, suitable for designs requiring increased thermal headroom or current margin.

For Alternative Sourcing: APT20M45BVRG and APT20M45BVFRG (Microchip) provide 56A current rating with identical 200V/300W specifications. Both are active products with RoHS3 compliance. These parts accommodate ±30V gate voltage, providing broader gate drive compatibility than the original specification.

For Lowest Gate Charge Applications: STW75NF20 (STMicroelectronics) delivers the lowest gate charge (84 nC) and lowest input capacitance (3260 pF) among all substitutes, with 75A current rating. This part is active and RoHS3 compliant. Note: Power dissipation is reduced to 190W, requiring thermal design verification for applications exceeding this limit.

All substitute parts maintain TO-247 package compatibility and through-hole mounting, enabling direct socket replacement with appropriate PCB layout verification.

Frequently Asked Questions (FAQ)

Q: Can IXFH74N20P replace IXTH50N20 in any application? A: IXFH74N20P maintains identical voltage specifications (200V) and exceeds current requirements (74A vs. 50A). The higher power dissipation rating (480W vs. 300W) and lower on-resistance (34 mOhm vs. 45 mOhm) make it suitable for direct replacement. Gate threshold voltage differs slightly (5V vs. 4V at different test conditions), requiring gate drive circuit verification for marginal designs.

Q: What is the difference between IRFP260NPBF and IRFP260MPBF? A: Both parts are electrically identical with 200V/50A ratings, 300W power dissipation, and identical on-resistance (40 mOhm). The primary difference is packaging designation (NPBF vs. MPBF), which reflects manufacturing lot tracking. Both are active Infineon products with RoHS3 compliance and extended temperature range to 175°C.

Q: Why does STW75NF20 have lower power dissipation than other 75A parts? A: STW75NF20 is specified at 190W (Tc) compared to 480W for IXFH74N20P. This reflects different thermal measurement conditions and package thermal characteristics. Applications requiring sustained power dissipation above 190W must use alternative parts or implement enhanced thermal management.

Q: Are all substitute parts pin-compatible with IXTH50N20? A: All substitute parts use TO-247 package variants (TO-247-3, TO-247AC, TO-247AD, TO-247 [B]) with identical pin configurations (Gate, Drain, Source). Physical dimensions and lead spacing are compatible for through-hole PCB mounting. Verify PCB footprint compatibility with specific package variant documentation.

Q: Which substitute offers the best gate drive efficiency? A: STW75NF20 has the lowest gate charge (84 nC) and input capacitance (3260 pF), reducing gate drive power requirements and switching losses. IXFH74N20P offers moderate gate charge (107 nC) with improved current handling. IRFP260 variants have higher gate charge (234 nC), requiring higher gate drive current.

Q: Can I use APT20M45BVRG in a ±20V gate drive circuit? A: APT20M45BVRG is rated for ±30V maximum gate voltage, exceeding the IXTH50N20 specification of ±20V. This provides additional margin for gate drive circuits. Gate threshold voltage (4V @ 1mA) is compatible with standard gate drive levels.

Q: What is the impact of extended temperature range on reliability? A: IRFP260NPBF and IRFP260MPBF operate to 175°C (vs. 150°C for IXTH50N20), providing 25°C additional margin. This extends device life in high-temperature environments and reduces thermal stress during transient conditions. All substitute parts maintain RoHS3 compliance across their operating ranges.

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