IXTH500N04T2 Equivalent & Substitute Parts

Part Overview

The IXTH500N04T2 is an N-Channel 40V 500A power MOSFET manufactured by IXYS in the TrenchT2™ series. This device is housed in a TO-247 package and rated for 1000W continuous power dissipation at the case temperature. The component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are necessary when the primary component becomes unavailable, when design requirements demand alternative electrical characteristics, or when supply chain optimization requires component standardization across manufacturing facilities. The substitute devices listed maintain compatibility within the 40V drain-source voltage class while offering alternative current ratings and power dissipation profiles.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	500	A
On-State Resistance (Rds On) @ 100A, 10V	1.6	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.5	V
Power Dissipation (Max)	1000	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-247	—
FET Type	N-Channel	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH500N04T2 is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal 40V
Package Type: Must be TO-247 or TO-247AC (mechanically and electrically compatible through-hole packages)
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide Semiconductor)
Operating Temperature Range: Must encompass -55°C to 175°C
Gate Voltage Rating (Vgs Max): Must be ±20V or greater

Secondary Selection Criteria:

Continuous Drain Current (Id): Substitute devices may have lower current ratings; applications requiring full 500A operation cannot use lower-rated substitutes
On-State Resistance (Rds On): Lower resistance values indicate superior performance; higher resistance values result in increased power dissipation
Power Dissipation (Max): Lower ratings indicate reduced thermal capability; thermal design must accommodate the substitute device's maximum rating

The substitute parts listed (IRFP4004PBF, IRFP7430PBF, IRLP3034PBF) all meet the primary compatibility criteria. However, all three substitute devices are rated for 195A continuous drain current, which is significantly lower than the IXTH500N04T2's 500A rating. These substitutes are suitable only for applications where the actual operating current does not exceed 195A.

Parameter Comparison

Parameter	IXTH500N04T2	IRFP4004PBF	IRFP7430PBF	IRLP3034PBF	Unit
Manufacturer	IXYS	Infineon Technologies	Infineon Technologies	Infineon Technologies	—
Drain to Source Voltage (Vdss)	40	40	40	40	V
Continuous Drain Current (Id) @ 25°C	500	195	195	195	A
Rds On (Max) @ 10V	1.6 @ 100A	1.7 @ 195A	1.3 @ 100A	1.7 @ 195A	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.5	4.0	3.9	2.5	V
Gate Charge (Qg) @ 10V	405	330	460	162 @ 4.5V	nC
Input Capacitance (Ciss) @ 25V	25000	8920	14240	10315	pF
Power Dissipation (Max)	1000	380	366	341	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package Type	TO-247 (IXTH)	TO-247AC	TO-247AC	TO-247AC	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Product Status	Active	Not For New Designs	Active	Active	—

Engineering Selection Recommendations

IXTH500N04T2 (Primary Component)

The IXTH500N04T2 maintains Active product status and is the recommended choice for new designs requiring the full 500A continuous drain current capability. This device offers the highest power dissipation rating (1000W) and is suitable for high-current switching applications. All regulatory certifications (RoHS3, REACH Unaffected, EAR99) are current and applicable.

IRFP7430PBF (Preferred Substitute)

The IRFP7430PBF is classified as Active product status and is the preferred substitute when the application current requirement does not exceed 195A. This device features the lowest on-state resistance (1.3 mOhm @ 100A, 10V) among the substitutes, resulting in reduced power dissipation and improved thermal performance. All regulatory certifications are current. The higher gate charge (460 nC @ 10V) requires consideration in gate drive circuit design.

IRLP3034PBF (Secondary Substitute)

The IRLP3034PBF is classified as Active product status and offers the lowest gate threshold voltage (2.5V @ 250µA) and lowest gate charge (162 nC @ 4.5V) among the substitutes. This device is suitable for applications with lower gate drive voltage requirements or where gate drive power consumption must be minimized. The on-state resistance (1.7 mOhm @ 195A, 10V) is comparable to the IRFP4004PBF. All regulatory certifications are current.

IRFP4004PBF (Not Recommended for New Designs)

The IRFP4004PBF is classified as Not For New Designs and should not be selected for new circuit implementations. This device is retained in the substitute list for legacy system maintenance and repair applications only. All regulatory certifications remain valid for existing installations.

Frequently Asked Questions (FAQ)

Q: Can the IRFP7430PBF, IRLP3034PBF, or IRFP4004PBF be used as direct replacements for the IXTH500N04T2 in all applications?

A: No. All three substitute devices are rated for 195A continuous drain current, compared to the IXTH500N04T2's 500A rating. These substitutes are suitable only for applications where the actual operating current does not exceed 195A. Applications requiring the full 500A capability must use the IXTH500N04T2 or equivalent high-current devices.

Q: What are the package compatibility considerations between TO-247 and TO-247AC?

A: The TO-247 (IXTH) and TO-247AC packages are mechanically and electrically compatible through-hole packages with identical pin configurations and mounting footprints. Both packages accommodate the same PCB hole patterns and lead spacing. Thermal performance characteristics may vary slightly between manufacturers due to internal die and lead frame design differences.

Q: How does the on-state resistance difference affect circuit performance?

A: On-state resistance (Rds On) directly determines power dissipation during conduction. The IRFP7430PBF (1.3 mOhm @ 100A, 10V) dissipates less power than the IRFP4004PBF and IRLP3034PBF (both 1.7 mOhm @ 195A, 10V). In high-current applications, this difference results in measurable thermal performance variations. Thermal design calculations must account for the substitute device's specific Rds On value.

Q: What is the significance of gate charge (Qg) differences among the substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. The IRLP3034PBF (162 nC @ 4.5V) requires significantly less gate charge than the IRFP7430PBF (460 nC @ 10V). Lower gate charge reduces gate drive circuit power consumption and switching losses. Gate drive circuits must be verified to supply sufficient current and voltage for the selected substitute device.

Q: Are all substitute parts RoHS3 compliant and suitable for regulated applications?

A: Yes. All substitute parts listed (IRFP4004PBF, IRFP7430PBF, IRLP3034PBF) are RoHS3 compliant with REACH Unaffected status and EAR99 classification, identical to the IXTH500N04T2. All devices carry unlimited moisture sensitivity rating (MSL 1). These certifications apply to all listed components.

Q: Which substitute should be selected for new design implementations?

A: For new designs, select the IRFP7430PBF if the application current requirement does not exceed 195A. This device maintains Active product status and offers superior on-state resistance performance. The IRLP3034PBF is the alternative choice if lower gate charge and lower gate threshold voltage are design requirements. The IRFP4004PBF should not be selected for new designs due to its Not For New Designs classification.

Q: How do input capacitance differences impact circuit design?

A: Input capacitance (Ciss) affects gate drive circuit bandwidth and switching speed. The IXTH500N04T2 (25000 pF @ 25V) has significantly higher input capacitance than all substitutes. The IRFP4004PBF (8920 pF @ 25V) has the lowest input capacitance, resulting in faster switching response. Gate drive circuits designed for the IXTH500N04T2 may require adjustment when using substitute devices with lower capacitance values.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message