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IXTH420N04T2 Equivalent & Substitute Parts
Part Overview
The IXTH420N04T2 is an N-Channel MOSFET rated for 40V drain-to-source voltage with 420A continuous drain current in a Through Hole TO-247 package. This device is manufactured by IXYS as part of the TrenchT2™ series and is currently classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 420 | A |
| On-State Resistance (Rds On Max) @ 100A, 10V | 2 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 250µA | 3.5 | V |
| Gate Charge (Qg Max) @ 10V | 315 | nC |
| Input Capacitance (Ciss Max) @ 25V | 19700 | pF |
| Power Dissipation (Max) | 935 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-247-3 | Through Hole |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the IXTH420N04T2 is determined by the following critical electrical and mechanical parameters:
Voltage Rating: The substitute must maintain the same 40V Vdss rating to ensure safe operation within the original circuit design envelope.
Current Capability: The substitute must support equal or greater continuous drain current at 25°C. The IXTH420N04T2 specifies 420A; substitutes with equal or higher current ratings are acceptable.
On-State Resistance (Rds On): Lower or equal Rds On values are acceptable, as they reduce conduction losses and heat dissipation without compromising circuit performance.
Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with comparable or lower values maintain compatibility with existing gate drive circuits.
Package and Mounting: The substitute must use the same TO-247-3 Through Hole package to ensure mechanical and thermal compatibility with the PCB layout and heatsinking arrangement.
Compliance and Status: Active product status and maintained RoHS3 compliance ensure long-term availability and regulatory alignment.
Parameter Comparison
| Parameter | IXTH420N04T2 (Main Part) | IXTH500N04T2 (Substitute) | Unit |
|---|---|---|---|
| Manufacturer | IXYS | IXYS | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 40 | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 420 | 500 | A |
| On-State Resistance (Rds On Max) @ 100A, 10V | 2 | 1.6 | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ 250µA | 3.5 | 3.5 | V |
| Gate Charge (Qg Max) @ 10V | 315 | 405 | nC |
| Input Capacitance (Ciss Max) @ 25V | 19700 | 25000 | pF |
| Power Dissipation (Max) | 935 | 1000 | W |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C |
| Package Type | TO-247-3 | TO-247-3 | — |
| Mounting Type | Through Hole | Through Hole | — |
| Series | TrenchT2™ | TrenchT2™ | — |
| Product Status | Obsolete | Active | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
Engineering Selection Recommendations
IXTH500N04T2 is the primary substitute for the obsolete IXTH420N04T2. This substitution is valid based on the following engineering criteria:
Voltage Compatibility: Both devices share identical 40V Vdss ratings, ensuring equivalent voltage stress margins in the circuit.
Current Capability: The IXTH500N04T2 provides 500A continuous drain current, exceeding the original 420A specification. This higher current rating provides design margin and supports applications requiring increased current capacity without circuit modification.
Electrical Performance: The IXTH500N04T2 exhibits lower on-state resistance (1.6 mOhm versus 2 mOhm), resulting in reduced conduction losses and improved thermal performance. Higher gate charge (405 nC versus 315 nC) and input capacitance (25000 pF versus 19700 pF) require gate drive circuits capable of handling these increased values; however, these parameters remain within typical gate drive specifications for high-current MOSFET applications.
Thermal Performance: The IXTH500N04T2 supports 1000W maximum power dissipation compared to 935W for the original part, providing enhanced thermal headroom.
Package and Compliance: Both devices use identical TO-247-3 Through Hole packaging, ensuring direct mechanical and thermal compatibility. Both maintain ROHS3 compliance and MSL Level 1 rating, supporting regulatory and supply chain requirements.
Product Status: The IXTH500N04T2 holds Active product status, ensuring long-term availability and manufacturer support, addressing the obsolescence of the original IXTH420N04T2.
Frequently Asked Questions (FAQ)
Q: Can the IXTH500N04T2 directly replace the IXTH420N04T2 in existing designs?
A: Yes. Both devices share identical voltage ratings (40V Vdss), gate threshold voltage (3.5V), operating temperature range (-55°C to 175°C), and TO-247-3 package configuration. The IXTH500N04T2 provides higher current capability (500A versus 420A) and lower on-state resistance, making it a direct electrical and mechanical substitute.
Q: What are the implications of higher gate charge in the IXTH500N04T2?
A: The IXTH500N04T2 specifies 405 nC gate charge compared to 315 nC for the IXTH420N04T2. This 90 nC increase requires gate drive circuits to supply additional charge during switching transitions. Existing gate drive circuits designed for the original part must be evaluated to confirm adequate current sourcing capability. Higher gate charge may result in slightly longer switching times if gate drive current is limited.
Q: Does the increased input capacitance of the IXTH500N04T2 affect circuit performance?
A: The IXTH500N04T2 specifies 25000 pF input capacitance compared to 19700 pF for the IXTH420N04T2. This 5300 pF increase affects gate drive impedance and switching transient behavior. Gate drive circuits must be evaluated to confirm compatibility with the higher capacitive load. In most applications with properly designed gate drive circuits, this difference does not prevent substitution.
Q: Are there package or mounting differences between these devices?
A: No. Both the IXTH420N04T2 and IXTH500N04T2 use identical TO-247-3 Through Hole packages. PCB layouts, heatsink mounting arrangements, and thermal management designs require no modification for substitution.
Q: What is the compliance status of the IXTH500N04T2?
A: The IXTH500N04T2 is ROHS3 compliant and carries MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original IXTH420N04T2. Both devices meet current regulatory requirements for electronic component procurement and supply chain management.
Q: Why is the IXTH420N04T2 classified as obsolete?
A: The IXTH420N04T2 has reached end-of-life status within IXYS product portfolio. The IXTH500N04T2, as an active product within the same TrenchT2™ series, provides superior electrical performance and ensures continued availability for new designs and field replacements.
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