IXTH40N30 Equivalent & Substitute Parts

Part Overview

The IXTH40N30 is an N-Channel MOSFET rated for 300V drain-to-source voltage with 40A continuous drain current in a TO-247 through-hole package. This device is part of the MegaMOS™ series and is classified as Not For New Designs. Due to its obsolescence status, equivalent substitute parts with comparable or enhanced electrical characteristics are available from IXYS and STMicroelectronics. Substitute parts maintain the same voltage rating and package form factor while offering improved performance metrics or active product status.

Substiute Parts

IXTH40N30
IXYSIn Stock: 889191IXTH40N30 Datasheet
IXTH40N30
Current Part
IXFH46N30T
IXYSIn Stock: 1383IXFH46N30T Datasheet
IXFH46N30T
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IXFH56N30X3
IXYSIn Stock: 2261IXFH56N30X3 Datasheet
IXFH56N30X3
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STW46NF30
STMicroelectronicsIn Stock: 625727STW46NF30 Datasheet
STW46NF30
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 300 V
Continuous Drain Current (Id) @ 25°C 40 A
On-State Resistance (Rds On Max) @ 10V 85 mOhm
Gate Threshold Voltage (Vgs th) Max 4 V
Gate Charge (Qg) Max @ 10V 220 nC
Power Dissipation (Max) 300 W
Operating Temperature Range -55 to 150 °C
Package Type TO-247-3 Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the IXTH40N30 are selected based on the following criteria:

Mandatory Matching Parameters:

  • Drain to Source Voltage (Vdss): 300V
  • Package Type: TO-247 through-hole configuration
  • FET Type: N-Channel MOSFET
  • Technology: Metal Oxide Semiconductor

Performance Compatibility Parameters:

  • Continuous Drain Current (Id): Equal to or greater than 40A
  • On-State Resistance (Rds On): Equal to or lower than 85mOhm
  • Gate Threshold Voltage (Vgs th): Within ±20V maximum rating
  • Operating Temperature Range: Minimum -55°C to 150°C

All substitute parts listed maintain identical voltage ratings and package specifications while offering equivalent or superior electrical performance characteristics. Substitutes are available in both active and legacy product statuses.

Parameter Comparison

Parameter IXTH40N30 IXFH46N30T IXFH56N30X3 STW46NF30
Manufacturer IXYS IXYS IXYS STMicroelectronics
Drain to Source Voltage (Vdss) 300V 300V 300V 300V
Continuous Drain Current (Id) @ 25°C 40A 46A 56A 42A
Rds On (Max) @ 10V 85mOhm 80mOhm 27mOhm 75mOhm
Gate Threshold Voltage (Vgs th) Max 4V @ 250µA 5V @ 4mA 4.5V @ 1.5mA 4V @ 250µA
Gate Charge (Qg) Max @ 10V 220nC 86nC 56nC 90nC
Input Capacitance (Ciss) Max @ 25V 4600pF 4770pF 3750pF 3200pF
Power Dissipation (Max) 300W 460W 320W 300W
Operating Temperature Range -55 to 150°C -55 to 150°C -55 to 150°C -55 to 175°C
Package Type TO-247-3 TO-247-3 TO-247-3 TO-247-3
Product Status Not For New Designs Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IXFH46N30T (IXYS HiPerFET™, Trench)

The IXFH46N30T is an active product offering 15% higher continuous drain current (46A vs. 40A) with improved on-state resistance (80mOhm vs. 85mOhm). This part features significantly lower gate charge (86nC vs. 220nC), resulting in faster switching characteristics. The IXFH46N30T is suitable for applications requiring enhanced current handling and reduced switching losses. Product status is Active, ensuring long-term availability and supply chain stability.

IXFH56N30X3 (IXYS HiPerFET™, Ultra X3)

The IXFH56N30X3 is an active product with the highest continuous drain current rating (56A) and the lowest on-state resistance (27mOhm) among all substitutes. Gate charge is substantially reduced to 56nC, enabling superior switching performance. Input capacitance is also minimized at 3750pF. This part is recommended for applications where maximum efficiency and thermal performance are critical. Product status is Active with full long-term support.

STW46NF30 (STMicroelectronics STripFET™ II)

The STW46NF30 provides 42A continuous drain current with 75mOhm on-state resistance, closely matching the IXTH40N30 performance envelope. This part offers an extended maximum operating temperature of 175°C compared to 150°C for the IXTH40N30, providing additional thermal margin. Gate charge is 90nC with reduced input capacitance at 3200pF. Product status is Active with established supply availability.

All three substitute parts maintain full RoHS3 compliance and identical 300V voltage rating with TO-247-3 package compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IXFH46N30T directly replace the IXTH40N30 in existing designs?

A: Yes. The IXFH46N30T maintains identical voltage rating (300V), package type (TO-247-3), and pinout configuration. The higher current rating (46A vs. 40A) and lower on-state resistance (80mOhm vs. 85mOhm) provide improved performance margins. Gate charge reduction from 220nC to 86nC may require driver circuit evaluation for switching speed compatibility.

Q: What is the primary advantage of the IXFH56N30X3 over other substitutes?

A: The IXFH56N30X3 delivers the lowest on-state resistance (27mOhm) and gate charge (56nC) among all available substitutes, resulting in significantly reduced conduction losses and faster switching transitions. This part is optimized for high-efficiency applications where thermal performance and switching speed are primary design constraints.

Q: Is the STW46NF30 suitable for high-temperature applications?

A: The STW46NF30 supports an extended maximum operating temperature of 175°C compared to 150°C for the IXTH40N30 and other IXYS substitutes. This additional thermal headroom is beneficial for applications operating in elevated ambient conditions or with limited cooling provisions.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed (IXFH46N30T, IXFH56N30X3, and STW46NF30) are ROHS3 Compliant, meeting environmental and regulatory requirements equivalent to the original IXTH40N30.

Q: What is the impact of reduced gate charge on circuit design?

A: Lower gate charge (56nC to 90nC vs. 220nC) reduces the charge required to switch the MOSFET on and off, enabling faster switching transitions and lower driver power dissipation. Existing gate driver circuits designed for the IXTH40N30 will operate with improved performance margins when driving substitute parts with lower gate charge specifications.

Q: Can the IXTH40N30 be used in new designs?

A: No. The IXTH40N30 is classified as Not For New Designs. All three substitute parts (IXFH46N30T, IXFH56N30X3, and STW46NF30) are Active products and are recommended for new design implementations.

Q: Are there package or pinout differences between substitutes?

A: No. All substitute parts use the TO-247-3 through-hole package with identical pinout configuration, enabling direct mechanical and electrical compatibility without PCB modifications.

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