IXTH36P10 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH36P10 is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with a continuous drain current of 36A at 25°C. The device is packaged in a Through Hole TO-247 (IXTH) configuration and dissipates a maximum of 180W at the case temperature. This part is classified as Obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXTH36P10

IXYSIn Stock: 989IXTH36P10 Datasheet

Current PartRFQ

IXTH52P10P

IXYSIn Stock: 1015IXTH52P10P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTH36P10 is determined by strict electrical and mechanical parameter alignment within the P-Channel MOSFET category. The following parameters establish substitution validity:

Critical Matching Parameters:

• FET Type: P-Channel (required)
• Drain to Source Voltage (Vdss): 100V (required)
• Mounting Type: Through Hole (required)
• Package / Case: TO-247-3 (required)
• Operating Temperature Range: -55°C to 150°C (required)

Performance Parameters (Substitution Allowance):

• Continuous Drain Current (Id): Equal to or greater than 36A
• Power Dissipation (Max): Equal to or greater than 180W
• Rds On (Max): Equal to or less than 75mOhm (lower resistance is acceptable)

The IXTH52P10P qualifies as a substitute because it maintains identical voltage rating, package type, mounting configuration, and temperature range while providing enhanced current handling (52A versus 36A) and increased power dissipation capability (300W versus 180W). These improvements ensure compatibility with applications designed for the IXTH36P10 while offering superior thermal and electrical performance margins.

Parameter Comparison

Engineering Selection Recommendations

IXTH52P10P as Primary Substitute:

The IXTH52P10P is the designated manufacturer-recommended substitute for the IXTH36P10. Selection of this part is supported by the following engineering criteria:

Compliance & Availability:

• IXTH52P10P maintains ROHS3 compliance and REACH unaffected status, matching the regulatory posture of the original part
• Product status is Active, ensuring long-term availability and supply chain continuity
• Both parts carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications

Electrical Compatibility:

• Identical voltage rating (100V Vdss) ensures direct application compatibility
• Enhanced current rating (52A versus 36A) provides operational margin without circuit modification
• Improved Rds On performance (50mOhm versus 75mOhm) reduces conduction losses and heat generation
• Lower gate charge (60nC versus 95nC) improves switching efficiency

Thermal & Mechanical Compatibility:

• Identical TO-247-3 package and Through Hole mounting configuration enable direct PCB substitution
• Increased power dissipation rating (300W versus 180W) accommodates higher thermal loads
• Matching operating temperature range (-55°C to 150°C) preserves environmental performance specifications

Frequently Asked Questions (FAQ)

Q: Can the IXTH52P10P be used as a direct replacement for the IXTH36P10 without circuit modifications?

A: Yes. The IXTH52P10P maintains identical voltage rating, package type, and mounting configuration. The enhanced current and power ratings present no compatibility issues for applications designed for the IXTH36P10. Pin-to-pin compatibility is preserved in the TO-247-3 package.

Q: What is the significance of the higher continuous drain current rating in the IXTH52P10P?

A: The IXTH52P10P is rated for 52A continuous drain current compared to 36A in the IXTH36P10. This higher rating provides operational margin and allows the substitute part to handle applications at or near the original part's maximum current specification without thermal stress.

Q: How does the lower Rds On value of the IXTH52P10P affect circuit performance?

A: The IXTH52P10P exhibits lower on-resistance (50mOhm versus 75mOhm), resulting in reduced conduction losses during operation. This improvement decreases heat dissipation requirements and improves overall circuit efficiency, particularly in high-current applications.

Q: Are there any differences in gate drive requirements between these parts?

A: Both parts require 10V drive voltage for maximum Rds On specification. The IXTH52P10P exhibits lower gate charge (60nC versus 95nC), which may improve switching speed and reduce driver power consumption in gate drive circuits.

Q: Is the IXTH52P10P available in the same packaging format?

A: Yes. Both parts use the TO-247-3 package with Through Hole mounting. The IXTH52P10P is supplied in Tube packaging, while the IXTH36P10 packaging format is not specified in the provided data. Both are compatible with standard TO-247 PCB footprints.

Q: What is the product status difference, and why does it matter?

A: The IXTH36P10 is classified as Obsolete, while the IXTH52P10P is Active. Active status ensures continued manufacturing, availability, and technical support from the manufacturer. This distinction is critical for long-term design support and production planning.

Q: Are both parts compliant with current environmental and trade regulations?

A: Yes. Both the IXTH36P10 and IXTH52P10P are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99. They meet current environmental and export control requirements.