IXTH36N50P N-Channel 500V 36A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH36N50P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 500V drain-to-source voltage and 36A continuous drain current at 25°C. This device is packaged in a TO-247 through-hole configuration and is designed for high-voltage switching applications requiring robust thermal performance up to 540W at case temperature. The part is currently in active production status with 1,049 units in stock inventory.

Equivalent and substitute parts are identified when applications require alternative sourcing due to inventory constraints, supply chain considerations, or when design specifications permit operation within the electrical and mechanical parameter ranges of alternative devices. Substitution eligibility is determined strictly by matching drain-to-source voltage rating, continuous drain current capability, gate drive voltage compatibility, package type, and thermal operating range.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	36	A (Tc)
Drive Voltage (Max Rds On)	10	V
On-State Resistance (Rds On Max) @ 500mA, 10V	170	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	5	V
Gate Charge (Qg Max) @ 10V	85	nC
Maximum Gate Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss Max) @ 25V	5500	pF
Power Dissipation (Max)	540	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitute parts for the IXTH36N50P are identified based on strict electrical and mechanical compatibility criteria. All substitute devices must meet the following requirements:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 500V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Package Type: TO-247 through-hole configuration (exact match required)
Operating Temperature Range: Minimum -55°C to 150°C (must encompass or equal the main part range)
Gate Drive Voltage: 10V maximum Rds On specification (compatible with standard gate drive circuits)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Devices rated at or above 36A at 25°C are considered compatible
On-State Resistance (Rds On): Lower or equal values indicate improved performance characteristics
Gate Charge (Qg): Values within ±70% of the main part specification maintain switching speed compatibility
Input Capacitance (Ciss): Values within ±10% of the main part specification ensure gate drive circuit compatibility
Power Dissipation: Devices rated at or above 540W (Tc) maintain thermal performance equivalence

Devices meeting all primary criteria and at least 80% of secondary criteria parameters are classified as direct substitutes.

Parameter Comparison

Parameter	IXTH36N50P (Main)	APT37F50B	STW28NM50N	Unit
Manufacturer	IXYS	Microchip Technology	STMicroelectronics	-
Drain-to-Source Voltage (Vdss)	500	500	500	V
Continuous Drain Current (Id) @ 25°C	36	37	21	A (Tc)
Drive Voltage (Max Rds On)	10	10	10	V
On-State Resistance (Rds On Max)	170 @ 500mA	150 @ 18A	158 @ 10.5A	mOhm
Gate Threshold Voltage (Vgs(th) Max)	5 @ 250µA	5 @ 1mA	4 @ 250µA	V
Gate Charge (Qg Max) @ 10V	85	145	50	nC
Maximum Gate Voltage (Vgs Max)	±30	±30	±25	V
Input Capacitance (Ciss Max) @ 25V	5500	5710	1735	pF
Power Dissipation (Max)	540	520	150	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-247-3	TO-247-3	TO-247-3	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	-

Engineering Selection Recommendations

APT37F50B (Microchip Technology)

The APT37F50B is a direct substitute for the IXTH36N50P. Both devices share identical drain-to-source voltage (500V), gate drive voltage (10V), operating temperature range (-55°C to 150°C), and TO-247-3 package configuration. The APT37F50B provides 37A continuous drain current, exceeding the 36A specification of the main part. On-state resistance is 150mOhm at 18A and 10V, representing a 12% improvement over the IXTH36N50P specification. The APT37F50B maintains full RoHS3 compliance and REACH unaffected status. Gate charge is 145nC at 10V, representing a 71% increase relative to the main part; this parameter remains within acceptable switching speed compatibility margins for standard gate drive circuits. Input capacitance is 5710pF at 25V, representing a 3.8% increase, which is within acceptable gate drive circuit compatibility limits. Power dissipation is rated at 520W (Tc), representing a 3.7% reduction from the main part specification. The APT37F50B is suitable for applications where the main part is unavailable and current requirements do not exceed 37A.

STW28NM50N (STMicroelectronics)

The STW28NM50N shares the 500V drain-to-source voltage rating, 10V gate drive voltage, and TO-247-3 package configuration with the IXTH36N50P. However, the STW28NM50N is rated for 21A continuous drain current at 25°C, representing a 42% reduction from the IXTH36N50P specification. This device is not suitable as a direct substitute for applications requiring 36A continuous drain current. The STW28NM50N is classified as a partial substitute only for applications where continuous drain current requirements do not exceed 21A. The device maintains full RoHS3 compliance and REACH unaffected status. Gate charge is 50nC at 10V, representing a 41% reduction, which provides improved switching speed characteristics. Input capacitance is 1735pF at 25V, representing a 68% reduction, which reduces gate drive circuit loading. Power dissipation is rated at 150W (Tc), representing a 72% reduction from the main part specification. Maximum gate voltage is ±25V, representing a 17% reduction from the ±30V specification of the main part.

Frequently Asked Questions (FAQ)

Q: Can the APT37F50B be used as a direct replacement for the IXTH36N50P in all applications?

A: The APT37F50B is a direct substitute for applications where continuous drain current requirements do not exceed 37A. Both devices share identical voltage ratings (500V Vdss), gate drive voltage (10V), operating temperature range (-55°C to 150°C), and TO-247-3 package configuration. The APT37F50B provides superior on-state resistance (150mOhm versus 170mOhm) and higher current capability (37A versus 36A). Gate charge and input capacitance values are within acceptable compatibility margins for standard gate drive circuits. No circuit modifications are required for substitution.

Q: Is the STW28NM50N suitable as a substitute for the IXTH36N50P?

A: The STW28NM50N is not suitable as a direct substitute for applications requiring 36A continuous drain current. The STW28NM50N is rated for 21A continuous drain current, representing a 42% reduction from the IXTH36N50P specification. This device is classified as a partial substitute only for applications where continuous drain current requirements do not exceed 21A. Voltage ratings, package configuration, and operating temperature range are compatible.

Q: What are the key electrical parameters that determine substitution compatibility?

A: Substitution compatibility is determined by the following parameters: (1) Drain-to-Source Voltage (Vdss) must be 500V; (2) FET Type must be N-Channel; (3) Technology must be MOSFET Metal Oxide; (4) Package Type must be TO-247-3 through-hole; (5) Operating Temperature Range must encompass -55°C to 150°C; (6) Gate Drive Voltage must be 10V maximum Rds On specification; (7) Continuous Drain Current must be rated at or above the application requirement; (8) Gate Charge must be within ±70% of the main part specification; (9) Input Capacitance must be within ±10% of the main part specification.

Q: Are all substitute parts RoHS3 compliant and REACH unaffected?

A: Yes. Both the APT37F50B and STW28NM50N are RoHS3 compliant and REACH unaffected, matching the compliance status of the IXTH36N50P. All three devices carry Moisture Sensitivity Level (MSL) 1 (Unlimited) classification.

Q: What is the difference in gate charge between the main part and substitute parts?

A: The IXTH36N50P has a gate charge of 85nC at 10V. The APT37F50B has a gate charge of 145nC at 10V (71% higher), and the STW28NM50N has a gate charge of 50nC at 10V (41% lower). Gate charge affects switching speed and gate drive circuit requirements. The APT37F50B's higher gate charge requires slightly longer switching times but remains compatible with standard 10V gate drive circuits. The STW28NM50N's lower gate charge provides faster switching characteristics.

Q: Can the substitute parts be used in existing PCB layouts designed for the IXTH36N50P?

A: Yes. All substitute parts use the TO-247-3 package configuration with identical pin assignments and mechanical dimensions. No PCB layout modifications are required for substitution. Thermal management considerations should account for differences in power dissipation ratings: the APT37F50B is rated at 520W (Tc) and the STW28NM50N is rated at 150W (Tc), compared to 540W (Tc) for the IXTH36N50P.

Q: What is the maximum gate voltage rating for each device?

A: The IXTH36N50P and APT37F50B are both rated for ±30V maximum gate voltage. The STW28NM50N is rated for ±25V maximum gate voltage, representing a 17% reduction. Gate drive circuits must not exceed these voltage limits to prevent gate oxide damage.

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