IXTH340N04T4 Equivalent & Substitute Parts

Part Overview

The IXTH340N04T4 is an N-Channel MOSFET manufactured by IXYS, rated for 40V drain-to-source voltage with 340A continuous drain current at 25°C. The device is housed in a TO-247 through-hole package and is designed for high-current switching applications requiring low on-resistance performance.

This part is designated as Last Time Buy, indicating that the manufacturer has discontinued or will discontinue production. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support long-term product availability for applications currently utilizing this component.

Substiute Parts

IXTH340N04T4
IXYSIn Stock: 1018IXTH340N04T4 Datasheet
IXTH340N04T4
Current Part
IXTH360N055T2
IXYSIn Stock: 1156IXTH360N055T2 Datasheet
IXTH360N055T2
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 340 A
On-Resistance (Rds On Max) @ 100A, 10V 1.9 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 4 V
Gate Charge (Qg Max) @ 10V 256 nC
Power Dissipation (Max) 480 W
Operating Temperature Range -55 to 175 °C
Package Type TO-247-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTH340N04T4 is determined by electrical and mechanical compatibility within the following parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 40V
  • Continuous Drain Current (Id): Substitute must equal or exceed 340A at 25°C
  • On-Resistance (Rds On): Substitute must maintain comparable or lower on-resistance to preserve thermal and efficiency characteristics
  • Gate Threshold Voltage (Vgs(th)): Substitute must be compatible with existing gate drive circuitry
  • Package Type: Substitute must be housed in TO-247-3 through-hole package for mechanical and thermal compatibility
  • Operating Temperature Range: Substitute must support -55°C to 175°C operation

The IXTH360N055T2 qualifies as a manufacturer-recommended substitute. This device maintains N-Channel MOSFET topology, TO-247 through-hole packaging, and compatible gate drive specifications while providing enhanced voltage rating (55V), increased current capability (360A), and improved thermal performance (935W vs. 480W).

Parameter Comparison

Parameter IXTH340N04T4 IXTH360N055T2 Unit
Manufacturer IXYS IXYS
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 40 55 V
Continuous Drain Current (Id) @ 25°C 340 360 A
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ 100A, 10V 1.9 2.4 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 4 4 V
Gate Charge (Qg Max) @ 10V 256 330 nC
Vgs (Max) ±15 ±20 V
Input Capacitance (Ciss Max) @ 25V 13000 20000 pF
Power Dissipation (Max) 480 935 W
Operating Temperature Range -55 to 175 -55 to 175 °C
Package Type TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
Product Status Last Time Buy Active

Engineering Selection Recommendations

IXTH360N055T2 as Primary Substitute:

The IXTH360N055T2 is the manufacturer-recommended substitute for the IXTH340N04T4. Both devices are manufactured by IXYS and share identical compliance certifications (ROHS3 Compliant, REACH Unaffected, MSL 1). The substitute maintains full mechanical compatibility through identical TO-247-3 through-hole packaging and thermal interface requirements.

The IXTH360N055T2 provides enhanced electrical performance characteristics: 55V voltage rating (versus 40V), 360A current capability (versus 340A), and 935W power dissipation (versus 480W). These improvements ensure the substitute operates within or below thermal limits in applications designed for the original part.

Gate drive compatibility is maintained through identical 4V gate threshold voltage specifications and compatible ±20V maximum gate voltage rating (versus ±15V on the original). The substitute is currently in Active product status, ensuring long-term availability and supply chain continuity.

Applications operating at voltages below 40V and currents below 340A can directly substitute the IXTH360N055T2 without circuit modification. Applications requiring the full 40V rating should verify that the 55V rating does not introduce unintended circuit behavior in voltage-sensitive topologies.

Frequently Asked Questions (FAQ)

Q: Can the IXTH360N055T2 directly replace the IXTH340N04T4 in existing designs?

A: Yes, the IXTH360N055T2 provides direct mechanical and electrical compatibility. Both devices use TO-247-3 through-hole packaging, identical gate threshold voltage (4V), and compatible gate drive voltage specifications. The substitute's higher voltage and current ratings ensure operation within design margins for applications originally specified for the IXTH340N04T4.

Q: What are the key differences between these two devices?

A: The IXTH360N055T2 provides higher drain-to-source voltage (55V vs. 40V), increased continuous drain current (360A vs. 340A), higher power dissipation capability (935W vs. 480W), and higher maximum gate voltage (±20V vs. ±15V). On-resistance increases slightly (2.4mOhm vs. 1.9mOhm at 100A, 10V), and gate charge increases (330nC vs. 256nC at 10V).

Q: Are there compliance or regulatory differences between these parts?

A: No. Both devices are ROHS3 Compliant, REACH Unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating. Regulatory and environmental compliance is identical.

Q: Why is the IXTH340N04T4 designated as Last Time Buy?

A: Last Time Buy designation indicates the manufacturer has discontinued or will discontinue production. This status necessitates identifying active substitute parts to maintain supply chain continuity and support long-term product availability for existing applications.

Q: What is the impact of increased on-resistance in the IXTH360N055T2?

A: The IXTH360N055T2 exhibits 0.5mOhm higher on-resistance (2.4mOhm vs. 1.9mOhm) at 100A and 10V gate voltage. This results in proportionally higher conduction losses. Applications sensitive to thermal performance should calculate power dissipation at operating current to verify thermal management adequacy.

Q: Does the higher gate charge of the IXTH360N055T2 affect gate drive circuit design?

A: The IXTH360N055T2 requires 330nC gate charge versus 256nC for the IXTH340N04T4. Gate drive circuits must supply sufficient charge within the switching time window. Existing gate drive circuits designed for the original part should be verified to deliver adequate charge at the specified gate voltage to maintain switching performance.

Q: Are both devices available in the same packaging configuration?

A: Yes. Both the IXTH340N04T4 and IXTH360N055T2 are housed in TO-247-3 through-hole packages with identical mechanical dimensions and thermal interface requirements. PCB layout and heatsink mounting are directly compatible.

Request Quote (Ships tomorrow)