IXTH30N50P N-Channel 500V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH30N50P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS in the Polar series. This through-hole TO-247 package device is rated for 500V drain-to-source voltage with 30A continuous drain current and 460W maximum power dissipation. The part is Active in product status and RoHS3 compliant. Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters within the same package class to ensure direct functional replacement in circuit applications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	200 mOhm @ 15A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	70	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	4150	pF @ 25V
Power Dissipation (Max)	460	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the IXTH30N50P are grouped based on the following critical electrical parameters that determine functional equivalence:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 500V minimum
Continuous Drain Current (Id): 30A or greater at 25°C
Package Type: TO-247-3 through-hole configuration
Gate Drive Voltage: 10V nominal
Operating Temperature Range: -55°C to 150°C or equivalent

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: 415W or greater supports thermal equivalence

Parts that deviate from the primary matching criteria (such as reduced current rating or different voltage class) are identified as partial substitutes with application-specific limitations noted.

Parameter Comparison

Parameter	IXTH30N50P	APT30F50B	APT5017BVRG	IRFP31N50LPBF	STW19NM50N	STW28NM50N
Manufacturer	IXYS	Microchip Technology	Microchip Technology	Vishay Siliconix	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	500	500	500	500
Id @ 25°C (A)	30	30	30	31	14	21
Rds On Max (mOhm)	200 @ 15A, 10V	190 @ 14A, 10V	170 @ 500mA, 10V	180 @ 19A, 10V	250 @ 7A, 10V	158 @ 10.5A, 10V
Vgs(th) Max (V)	5 @ 250µA	5 @ 1mA	4 @ 1mA	5 @ 250µA	4 @ 250µA	4 @ 250µA
Qg Max (nC)	70 @ 10V	115 @ 10V	300 @ 10V	210 @ 10V	34 @ 10V	50 @ 10V
Ciss Max (pF)	4150 @ 25V	4525 @ 25V	5280 @ 25V	5000 @ 25V	1000 @ 50V	1735 @ 25V
Power Dissipation Max (W)	460	415	Not specified	460	110	150
Operating Temp Range (°C)	-55 to 150	-55 to 150	Not specified	-55 to 150	to 150	to 150
Package	TO-247-3	TO-247 [B]	TO-247 [B]	TO-247AC	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Full Equivalents (Direct Substitution):

APT30F50B (Microchip Technology) and IRFP31N50LPBF (Vishay Siliconix) are direct functional equivalents to the IXTH30N50P. Both devices match the 500V/30A+ rating, operate across the -55°C to 150°C temperature range, and are RoHS3 compliant. The APT30F50B exhibits lower on-state resistance (190 mOhm vs. 200 mOhm) and the IRFP31N50LPBF provides 31A continuous current with 180 mOhm on-state resistance, both representing performance improvements. These parts are suitable for direct pin-compatible replacement in existing circuit designs.

Partial Substitutes (Application-Dependent):

STW28NM50N (STMicroelectronics) operates at 500V with 21A continuous current, representing a reduced current capability compared to the 30A specification. This part is suitable for applications where the full 30A rating is not required but the 500V voltage class is necessary. The STW28NM50N exhibits superior on-state resistance (158 mOhm) and lower gate charge (50 nC), making it advantageous for low-loss switching applications within its current rating.

STW19NM50N (STMicroelectronics) is rated for 500V at 14A continuous current and is not recommended as a substitute for the IXTH30N50P in applications requiring the full 30A specification. This part is suitable only for reduced-current applications and exhibits significantly higher on-state resistance (250 mOhm) and lower power dissipation (110W).

Compliance and Certification:

All listed substitute parts maintain RoHS3 compliance and REACH unaffected status, matching the regulatory posture of the IXTH30N50P. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095, ensuring consistent export and tariff classification.

Frequently Asked Questions (FAQ)

Q: Can the APT30F50B replace the IXTH30N50P in a 30A application?

A: Yes. The APT30F50B is rated for 30A continuous drain current at 25°C with 500V Vdss, matching the IXTH30N50P specification. The lower on-state resistance (190 mOhm vs. 200 mOhm) represents a performance improvement. Both devices use TO-247 package variants and are RoHS3 compliant.

Q: What is the difference between the IXTH30N50P and IRFP31N50LPBF?

A: The IRFP31N50LPBF provides 31A continuous current versus the IXTH30N50P's 30A, with a lower on-state resistance of 180 mOhm. Both are rated for 500V operation and -55°C to 150°C temperature range. The IRFP31N50LPBF uses a TO-247AC package variant while the IXTH30N50P uses TO-247-3, but both are mechanically and electrically compatible in standard TO-247 footprints.

Q: Why is STW28NM50N listed as a partial substitute?

A: The STW28NM50N is rated for 21A continuous current, which is below the IXTH30N50P's 30A specification. This part is suitable only for applications where the circuit design does not require the full 30A capability. The 500V voltage rating and TO-247-3 package remain compatible.

Q: Can I use STW19NM50N as a substitute?

A: The STW19NM50N is not recommended as a substitute for the IXTH30N50P. It is rated for only 14A continuous current and 110W power dissipation, significantly below the IXTH30N50P's 30A and 460W ratings. Use this part only in applications with substantially reduced current requirements.

Q: Are all substitute parts available in the same package?

A: All substitute parts use TO-247 package variants (TO-247-3, TO-247 [B], or TO-247AC). These variants are mechanically compatible in standard TO-247 through-hole footprints. Pin configuration remains consistent across all listed parts.

Q: What is the impact of different gate charge (Qg) values?

A: Gate charge affects switching speed and gate drive power requirements. Lower Qg values (such as STW28NM50N at 50 nC) reduce switching losses and gate driver stress compared to higher values (such as APT5017BVRG at 300 nC). Selection depends on the specific gate driver circuit and switching frequency requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant and REACH unaffected, matching the regulatory compliance of the IXTH30N50P.

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