IXTH30N50 Equivalent & Substitute Parts

Part Overview

The IXTH30N50 is an N-Channel MOSFET rated for 500V drain-to-source voltage with 30A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247 package and is part of the MegaMOS™ series. The component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing system support and new design considerations. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-247 mounting requirement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	170	mOhm @ 500mA, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	227	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5680	pF @ 25V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-247
Package / Case	TO-247-3	-

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH30N50 is determined by the following critical parameters:

Primary Electrical Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id) @ 25°C: Must equal or exceed 30A
Mounting Type: Must be Through Hole TO-247 package

Secondary Electrical Criteria:

Drive Voltage (Max Rds On): 10V gate drive compatibility
Gate Threshold Voltage: Compatibility within ±20V Vgs maximum rating
Operating Temperature: Must support -55°C to 150°C range

Compliance Criteria:

RoHS3 Compliant status
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Unaffected status

The substitute parts identified (STW26NM50 and STW28NM50N) meet the core voltage and package requirements. However, the STW28NM50N operates at reduced continuous drain current (21A versus 30A), making it suitable only for applications where the lower current rating is acceptable. The STW26NM50 maintains the 30A rating and represents a direct functional equivalent.

Parameter Comparison

Parameter	IXTH30N50	STW26NM50	STW28NM50N	Unit
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	-
Series	MegaMOS™	MDmesh™	MDmesh™ II	-
Product Status	Obsolete	Not For New Designs	Active	-
Drain to Source Voltage (Vdss)	500	500	500	V
Continuous Drain Current (Id) @ 25°C	30	30	21	A (Tc)
Drive Voltage (Max Rds On)	10	10	10	V
Rds On (Max) @ Id, Vgs	170 @ 500mA, 10V	120 @ 13A, 10V	158 @ 10.5A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	5 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	227 @ 10V	106 @ 10V	50 @ 10V	nC
Vgs (Max)	±20	±30	±25	V
Input Capacitance (Ciss) (Max) @ Vds	5680 @ 25V	3000 @ 25V	1735 @ 25V	pF
Power Dissipation (Max)	360	313	150	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	-
Package / Case	TO-247-3	TO-247-3	TO-247-3	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	-
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	-

Engineering Selection Recommendations

STW26NM50 (STMicroelectronics)

The STW26NM50 provides electrical equivalence to the IXTH30N50 across all critical parameters. Both devices support 500V Vdss and 30A continuous drain current at 25°C in TO-247-3 packaging. The STW26NM50 exhibits superior on-resistance characteristics (120 mOhm versus 170 mOhm) and lower gate charge (106 nC versus 227 nC), resulting in improved switching efficiency and reduced drive circuit loading. The device is classified as "Not For New Designs," indicating mature technology suitable for legacy system support and replacement applications. Full RoHS3 compliance and REACH unaffected status align with the original part's regulatory standing.

STW28NM50N (STMicroelectronics)

The STW28NM50N maintains 500V Vdss and TO-247-3 packaging compatibility but operates at reduced continuous drain current (21A versus 30A). This device is classified as "Active," indicating current manufacturing support and suitability for new designs. The STW28NM50N demonstrates significantly lower power dissipation (150W versus 360W), reduced gate charge (50 nC), and lower input capacitance (1735 pF), making it suitable for applications where the 21A current rating is sufficient. Selection of this device requires verification that system current requirements do not exceed 21A continuous operation.

Compliance Basis

Both substitute parts maintain RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH unaffected status, ensuring regulatory alignment with the original IXTH30N50 specification.

Frequently Asked Questions (FAQ)

Q: Can the STW26NM50 directly replace the IXTH30N50 in existing designs?

A: The STW26NM50 meets all critical electrical specifications for the IXTH30N50, including 500V Vdss, 30A continuous drain current, and TO-247-3 packaging. Both devices operate across the -55°C to 150°C temperature range and maintain equivalent gate drive voltage requirements at 10V. Direct substitution is supported from an electrical and mechanical standpoint.

Q: What is the primary difference between the STW26NM50 and STW28NM50N?

A: The STW26NM50 maintains the 30A continuous drain current rating of the original IXTH30N50, while the STW28NM50N operates at 21A. The STW28NM50N offers reduced power dissipation (150W versus 313W for STW26NM50) and lower gate charge, making it suitable for lower-current applications. Selection depends on whether the application requires the full 30A capability.

Q: Are both substitute parts available in the same TO-247-3 package?

A: Yes. Both the STW26NM50 and STW28NM50N are supplied in TO-247-3 through-hole packages, matching the mechanical footprint and mounting requirements of the IXTH30N50.

Q: What is the significance of the "Not For New Designs" status of the STW26NM50?

A: This classification indicates that while the STW26NM50 remains in production and is suitable for replacement and legacy system support, STMicroelectronics does not recommend it for new design implementations. The STW28NM50N, classified as "Active," is the preferred choice for new applications requiring 500V, 21A N-Channel MOSFET functionality.

Q: Do the substitute parts maintain the same gate threshold voltage as the IXTH30N50?

A: The IXTH30N50 specifies a maximum gate threshold voltage of 4V at 250µA. The STW26NM50 specifies 5V at 250µA, and the STW28NM50N specifies 4V at 250µA. Both values remain within acceptable gate drive compatibility ranges for 10V drive voltage applications. The STW28NM50N provides closer threshold voltage matching to the original part.

Q: Are there thermal considerations when substituting these devices?

A: The IXTH30N50 is rated for 360W maximum power dissipation at Tc, while the STW26NM50 is rated for 313W and the STW28NM50N for 150W. Applications requiring sustained operation near the 360W dissipation level should use the STW26NM50. Lower-power applications may benefit from the STW28NM50N's reduced thermal output and improved efficiency characteristics.

Q: Do all three devices meet current regulatory compliance requirements?

A: Yes. The IXTH30N50, STW26NM50, and STW28NM50N are all RoHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity ratings, and maintain REACH unaffected status, ensuring regulatory alignment across all three devices.

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