IXTH26N60P Equivalent & Substitute Parts

Part Overview

The IXTH26N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 26A continuous drain current at 25°C. This device is packaged in a TO-247 through-hole configuration and is designed for high-voltage switching applications requiring robust thermal performance up to 460W. The part is Active in product status and fully RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across critical parameters including voltage rating, current capacity, gate charge characteristics, and thermal dissipation within the same package family.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	26	A (Tc)
Rds On (Max) @ Id, Vgs	270	mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs	72	nC @ 10V
Power Dissipation (Max)	460	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package / Case	TO-247-3	Through Hole
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH26N60P is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Current - Continuous Drain (Id): 26A or greater at 25°C
Package / Case: TO-247-3 configuration
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 150°C or wider
RoHS3 Compliance: Required

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower or equivalent values preferred for switching efficiency
Rds On (Max): Lower or equivalent values preferred for thermal performance
Power Dissipation (Max): 460W or greater preferred for thermal margin

Substitute parts are grouped into two categories based on voltage and current ratings:

Category A - Direct Voltage/Current Match (600V, 26A+): Parts maintaining 600V Vdss with 26A or higher continuous drain current, enabling direct functional replacement with equivalent or improved thermal characteristics.

Category B - Higher Voltage Rating (800V, 17A): Parts with elevated voltage rating but reduced current capacity, suitable for applications where voltage margin is prioritized over current capacity within the same thermal package.

Parameter Comparison

Parameter	IXTH26N60P	IRFP26N60LPBF	IRFP27N60KPBF	SPW17N80C3FKSA1	STW18N60M2
Manufacturer	IXYS	Vishay Siliconix	Vishay Siliconix	Infineon Technologies	STMicroelectronics
Drain to Source Voltage (Vdss)	600V	600V	600V	800V	600V
Current - Continuous Drain (Id) @ 25°C	26A	26A	27A	17A	13A
Rds On (Max) @ Id, Vgs	270 mOhm @ 500mA, 10V	250 mOhm @ 16A, 10V	220 mOhm @ 16A, 10V	290 mOhm @ 11A, 10V	280 mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10V	180 nC @ 10V	180 nC @ 10V	177 nC @ 10V	21.5 nC @ 10V
Vgs(th) (Max) @ Id	5V @ 250µA	5V @ 250µA	5V @ 250µA	3.9V @ 1mA	4V @ 250µA
Vgs (Max)	±30V	±30V	±30V	±20V	±25V
Input Capacitance (Ciss) (Max) @ Vds	4150 pF @ 25V	5020 pF @ 25V	4660 pF @ 25V	2320 pF @ 25V	791 pF @ 100V
Power Dissipation (Max)	460W	470W	500W	227W	110W
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

IRFP26N60LPBF (Vishay Siliconix)

This part maintains identical voltage and current ratings to the IXTH26N60P with 600V Vdss and 26A continuous drain current. The IRFP26N60LPBF offers improved thermal performance at 470W maximum power dissipation compared to 460W on the original part. Gate charge is elevated at 180 nC versus 72 nC, resulting in increased switching losses. All compliance certifications match the original specification. This substitute is suitable for applications where thermal margin is prioritized and switching frequency is not a primary constraint.

IRFP27N60KPBF (Vishay Siliconix)

This part exceeds the original specification with 27A continuous drain current at 600V Vdss, providing 3.8% additional current capacity. Maximum power dissipation reaches 500W, offering the highest thermal performance among all substitutes. Gate charge remains at 180 nC. The lower on-resistance of 220 mOhm at 16A, 10V improves conduction efficiency. All compliance certifications are equivalent to the original part. This substitute is suitable for applications requiring enhanced current margin and improved conduction characteristics.

SPW17N80C3FKSA1 (Infineon Technologies)

This part operates at an elevated voltage rating of 800V Vdss with reduced continuous drain current of 17A. The 800V rating provides additional voltage margin for applications with transient overvoltage conditions. Maximum power dissipation is 227W, significantly lower than the original specification. Gate charge is 177 nC. The maximum gate voltage is limited to ±20V compared to ±30V on the original part. This substitute is applicable only to applications where the 17A current capacity is sufficient and elevated voltage rating is required. All compliance certifications are maintained.

STW18N60M2 (STMicroelectronics)

This part operates at 600V Vdss with reduced continuous drain current of 13A, representing a 50% reduction in current capacity relative to the IXTH26N60P. Maximum power dissipation is 110W, substantially lower than the original specification. Gate charge is significantly reduced at 21.5 nC, providing superior switching efficiency. The maximum gate voltage is ±25V. This substitute is applicable only to applications where the 13A current capacity is sufficient and switching efficiency is the primary design constraint.

Frequently Asked Questions (FAQ)

Q: Can the IRFP26N60LPBF directly replace the IXTH26N60P in all applications?

A: The IRFP26N60LPBF maintains identical voltage and current ratings, enabling direct mechanical and electrical replacement in most applications. However, the elevated gate charge of 180 nC versus 72 nC will increase switching losses. Applications with high switching frequencies should evaluate the thermal impact of increased gate charge before substitution.

Q: What is the primary advantage of the IRFP27N60KPBF over the original IXTH26N60P?

A: The IRFP27N60KPBF provides 27A continuous drain current versus 26A, along with improved on-resistance of 220 mOhm and maximum power dissipation of 500W. These characteristics result in lower conduction losses and improved thermal performance, making it suitable for applications requiring enhanced current margin.

Q: When should the SPW17N80C3FKSA1 be selected instead of the IXTH26N60P?

A: The SPW17N80C3FKSA1 should be selected only when the application requires the elevated 800V voltage rating for transient overvoltage protection and the 17A continuous drain current is sufficient for the circuit design. The reduced power dissipation rating of 227W limits its use to lower-power applications.

Q: Is the STW18N60M2 a suitable substitute for high-current applications?

A: No. The STW18N60M2 provides only 13A continuous drain current, representing a 50% reduction from the IXTH26N60P specification. This part is suitable only for applications where current requirements do not exceed 13A. The significantly reduced power dissipation of 110W further limits its application scope.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All substitute parts listed are packaged in TO-247-3 through-hole configuration, enabling direct mechanical compatibility with existing PCB layouts and thermal management solutions designed for the IXTH26N60P.

Q: Do all substitute parts maintain RoHS3 compliance?

A: Yes. All substitute parts listed are RoHS3 compliant and maintain equivalent environmental and regulatory compliance status to the original IXTH26N60P.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge directly affects switching speed and driver power requirements. The IXTH26N60P has 72 nC gate charge, while IRFP26N60LPBF and IRFP27N60KPBF have 180 nC. Higher gate charge requires increased driver current or longer switching times. The STW18N60M2 with 21.5 nC gate charge enables faster switching with reduced driver requirements.

Q: Can the IXTH26N60P be used in applications designed for the SPW17N80C3FKSA1?

A: No. The IXTH26N60P is rated for 600V maximum Vdss, while the SPW17N80C3FKSA1 is rated for 800V. Using the IXTH26N60P in an application designed for 800V operation creates a voltage margin deficiency and increases failure risk under transient overvoltage conditions.

Q: What thermal considerations apply when substituting parts?

A: All substitute parts are mounted in identical TO-247-3 packages with equivalent thermal interface characteristics. However, maximum power dissipation ratings vary: IXTH26N60P (460W), IRFP26N60LPBF (470W), IRFP27N60KPBF (500W), SPW17N80C3FKSA1 (227W), and STW18N60M2 (110W). Thermal management solutions must accommodate the specific power dissipation rating of the selected substitute.

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