IXTH260N055T2 Equivalent & Substitute Parts

Part Overview

The IXTH260N055T2 is an N-Channel MOSFET manufactured by IXYS, rated for 55V drain-to-source voltage and 260A continuous drain current at 25°C. This device is part of the TrenchT2™ series and is housed in a TO-247 through-hole package. The component is Active in product status and fully RoHS3 compliant.

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. Substitution becomes necessary due to inventory availability, supply chain considerations, or design flexibility requirements while maintaining functional compatibility within specified operating parameters.

Substiute Parts

IXTH260N055T2

IXYSIn Stock: 5437IXTH260N055T2 Datasheet

Current PartRFQ

IRFP3077PBF

Infineon TechnologiesIn Stock: 16874IRFP3077PBF Datasheet

SimilarRFQ

IRFP3206PBF

Infineon TechnologiesIn Stock: 17997IRFP3206PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTH260N055T2 are identified based on the following critical parameters that determine functional compatibility:

Primary Substitution Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package Type: TO-247-3 (through-hole mounting)
• Operating Temperature Range: -55°C to 175°C
• Drive Voltage: 10V
• Gate Threshold Voltage: 4V @ specified Id
• Maximum Gate Voltage: ±20V
• RoHS3 Compliance and REACH Unaffected status

Secondary Compatibility Parameters:

• Drain to Source Voltage (Vdss): Must equal or exceed 55V
• Continuous Drain Current (Id): Must support application requirements
• On-State Resistance (Rds On): Must be compatible with thermal and efficiency requirements
• Gate Charge (Qg): Affects switching characteristics
• Input Capacitance (Ciss): Influences gate drive requirements
• Power Dissipation: Must accommodate thermal design constraints

The identified substitute parts meet the core electrical and mechanical requirements while maintaining package compatibility and regulatory compliance.

Parameter Comparison

Engineering Selection Recommendations

IXTH260N055T2 (Primary Part)

The IXTH260N055T2 remains the primary selection for applications requiring 260A continuous drain current at 55V. This device delivers the highest current capacity and power dissipation rating (480W) among the three options. All regulatory requirements are met: RoHS3 compliant, REACH unaffected, and Active product status ensures long-term availability and support.

IRFP3077PBF (Infineon Technologies)

The IRFP3077PBF is suitable for applications where 75V drain-to-source voltage rating is acceptable and continuous drain current requirements do not exceed 120A. This substitute provides higher voltage margin (75V vs. 55V) but reduced current capacity. Gate charge is elevated at 220nC, which may increase switching losses in high-frequency applications. RoHS3 compliance and Active status confirm regulatory alignment and supply continuity.

IRFP3206PBF (Infineon Technologies)

The IRFP3206PBF operates at 60V drain-to-source voltage with 120A maximum continuous drain current. This device offers the lowest on-state resistance (3.0mOhm @ 75A, 10V) and reduced input capacitance (6540pF), making it suitable for applications prioritizing efficiency and gate drive simplicity. Power dissipation is limited to 280W. RoHS3 compliance and Active status confirm regulatory requirements are satisfied.

Selection Basis:

All three devices maintain identical operating temperature ranges (-55°C to 175°C), gate threshold voltage (4V), maximum gate voltage (±20V), and through-hole TO-247-3 package compatibility. Selection between substitute parts depends on specific application requirements for voltage rating, current capacity, and thermal management. All parts are Active products with full regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the IRFP3077PBF or IRFP3206PBF directly replace the IXTH260N055T2 in all applications?

A: Direct replacement depends on application current and voltage requirements. The IXTH260N055T2 is rated for 260A continuous drain current; both Infineon substitutes are limited to 120A. If the application requires current above 120A, these substitutes are not suitable. Both substitutes have higher Vdss ratings (75V and 60V respectively), which is acceptable for 55V applications but does not provide functional equivalence for current capacity.

Q: What are the key differences in gate charge between these devices?

A: The IXTH260N055T2 has a gate charge of 140nC @ 10V, the IRFP3077PBF has 220nC @ 10V, and the IRFP3206PBF has 170nC @ 10V. Higher gate charge increases the energy required to switch the device and may increase switching losses in high-frequency circuits. Gate drive circuits must be verified to supply adequate charge for proper switching performance.

Q: Are all three devices compatible with the same PCB layout and mounting?

A: Yes. All three devices use the TO-247-3 through-hole package and are mechanically compatible with identical PCB footprints and mounting hardware. No layout modifications are required for package substitution.

Q: What is the significance of the on-state resistance (Rds On) differences?

A: The IXTH260N055T2 has Rds On of 3.3mOhm @ 50A, 10V. The IRFP3077PBF has 3.3mOhm @ 75A, 10V, and the IRFP3206PBF has 3.0mOhm @ 75A, 10V. Lower Rds On reduces conduction losses and heat generation. The IRFP3206PBF offers the lowest resistance, but all three devices are comparable in this parameter. Actual performance depends on the specific current levels in the application.

Q: Do all devices meet the same regulatory and compliance standards?

A: Yes. All three devices are RoHS3 compliant, REACH unaffected, and carry Active product status. They are suitable for applications with identical regulatory requirements. No compliance verification is needed when substituting between these parts.

Q: What is the impact of input capacitance (Ciss) differences on circuit design?

A: The IXTH260N055T2 has Ciss of 10800pF @ 25V, the IRFP3077PBF has 9400pF @ 50V, and the IRFP3206PBF has 6540pF @ 50V. Lower input capacitance reduces gate drive current requirements and switching losses. The IRFP3206PBF requires the least gate drive energy, which may simplify driver circuit design in high-frequency applications.

Q: Can these devices be used interchangeably in parallel configurations?

A: Parallel operation requires identical or closely matched electrical characteristics to ensure balanced current sharing. The significant difference in continuous drain current ratings (260A vs. 120A) makes parallel mixing of the IXTH260N055T2 with either Infineon substitute unsuitable. Devices of the same part number should be used for parallel configurations.

Q: What thermal considerations apply when selecting between these substitutes?

A: The IXTH260N055T2 has the highest power dissipation rating at 480W, followed by the IRFP3077PBF at 340W and the IRFP3206PBF at 280W. Applications with high continuous current or high switching frequency may generate significant heat. Thermal design must account for the selected device's power dissipation rating and ensure adequate heat sinking to maintain junction temperature within the -55°C to 175°C operating range.