IXTH250N075T N-Channel 75V 250A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH250N075T is an N-Channel MOSFET manufactured by IXYS, rated for 75V drain-to-source voltage and 250A continuous drain current in a Through Hole TO-247 package. This device is part of the TrenchMV™ series and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	250	A
On-State Resistance (Rds On Max) @ 50A, 10V	4	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	200	nC
Power Dissipation (Max)	550	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXTH250N075T is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must meet or exceed 250A at 25°C
Gate Drive Voltage: Must support 10V drive
Package Type: Must be Through Hole TO-247 variant
Operating Temperature Range: Must span -55°C to 175°C
FET Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped based on their ability to meet these criteria within acceptable engineering tolerances. Parts with lower current ratings or voltage ratings are not direct substitutes but may serve in de-rated applications.

Parameter Comparison

Parameter	IXTH250N075T	IXFH230N075T2	FDH210N08	IRFP2907PBF	IRFP3306PBF
Manufacturer	IXYS	IXYS	onsemi	Infineon Technologies	Infineon Technologies
Vdss (V)	75	75	75	75	60
Id @ 25°C (A)	250	230	210	209	120
Rds On Max @ 10V (mOhm)	4.0	4.2	—	4.5	4.2
Vgs(th) Max @ 250µA (V)	4	4	—	4	4
Qg Max @ 10V (nC)	200	178	—	620	120
Power Dissipation Max (W)	550	480	462	470	220
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH230N075T2 (IXYS)

This part is the closest functional equivalent to the IXTH250N075T. It maintains the same 75V voltage rating and provides 230A continuous drain current, representing a 92% current capability relative to the original. The IXFH230N075T2 is from the same manufacturer (IXYS) and belongs to active product lines (HiPerFET™ and TrenchT2™ series). It is ROHS3 compliant and carries identical operating temperature specifications. The slightly higher Rds On (4.2 mOhm vs. 4.0 mOhm) and lower gate charge (178 nC vs. 200 nC) provide improved switching efficiency. This part is suitable for direct substitution in applications where the 20A current reduction is acceptable.

FDH210N08 (onsemi)

This part maintains the 75V voltage rating with 210A continuous drain current (84% of original rating). It is an active product with ROHS3 compliance and identical operating temperature range. The TO-247-3 package provides mechanical compatibility. This part is suitable for applications with lower current demands or where thermal management can accommodate the reduced power dissipation (462W vs. 550W).

IRFP2907PBF (Infineon Technologies)

This part maintains the 75V voltage rating with 209A continuous drain current (83.6% of original rating). It is an active HEXFET® product with ROHS3 compliance and identical operating temperature specifications. The higher gate charge (620 nC vs. 200 nC) results in increased switching losses compared to the original part. This part is suitable for applications where switching frequency is not a critical constraint.

IRFP3306PBF (Infineon Technologies)

This part has a reduced voltage rating of 60V and 120A continuous drain current (48% of original rating). It is not a direct substitute for the IXTH250N075T due to the lower voltage and current specifications. This part is suitable only for de-rated applications operating below 60V with current requirements not exceeding 120A.

Frequently Asked Questions (FAQ)

Q: Can the IXFH230N075T2 be used as a direct replacement for the IXTH250N075T?

A: The IXFH230N075T2 is functionally compatible for most applications. Both parts share the same 75V voltage rating, TO-247-3 package, and operating temperature range. The 20A reduction in continuous drain current (230A vs. 250A) must be evaluated against application requirements. Thermal analysis should confirm that the lower power dissipation rating (480W vs. 550W) is acceptable for the intended circuit.

Q: What is the significance of the different TO-247 package variants (TO-247, TO-247AD, TO-247AC)?

A: All variants listed (TO-247-3, TO-247AD, TO-247AC) are mechanically and electrically compatible Through Hole packages with identical pin configurations. The suffix designations indicate minor manufacturing or thermal interface variations but do not affect PCB layout or electrical performance. All parts can be mounted in standard TO-247-3 footprints.

Q: Why does the IRFP2907PBF have significantly higher gate charge than the original part?

A: Gate charge (Qg) is a device-specific parameter determined by the internal capacitance and switching characteristics of the MOSFET die. The IRFP2907PBF exhibits 620 nC compared to the IXTH250N075T's 200 nC. This results in higher switching losses and requires higher gate drive current. Applications with high switching frequencies should account for this difference in thermal calculations.

Q: Is the IRFP3306PBF suitable as a substitute?

A: The IRFP3306PBF is not a direct substitute due to its reduced voltage rating (60V vs. 75V) and significantly lower current rating (120A vs. 250A). It is suitable only for applications that operate at voltages below 60V and require current below 120A. Using this part in a circuit designed for 75V/250A operation will result in inadequate performance and potential device failure.

Q: What compliance certifications should be verified for new designs?

A: All active substitute parts (IXFH230N075T2, FDH210N08, IRFP2907PBF, IRFP3306PBF) are ROHS3 compliant and REACH unaffected. All parts carry EAR99 export classification and HTSUS code 8541.29.0095. These certifications ensure regulatory compliance for commercial and industrial applications.

Q: How should thermal performance be evaluated when selecting a substitute?

A: Thermal performance is determined by power dissipation (Ptot), on-state resistance (Rds On), and junction-to-case thermal resistance (Rθjc). The IXFH230N075T2 provides the closest thermal match with 480W dissipation and 4.2 mOhm Rds On. Applications operating at maximum current and voltage should perform detailed thermal modeling to confirm that the substitute part's thermal characteristics are adequate for the intended duty cycle and ambient conditions.

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