IXTH24N50L N-Channel 500V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH24N50L is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage and 24A continuous drain current. Manufactured by IXYS, this through-hole component is housed in a TO-247 package and is designed for high-voltage switching applications requiring 400W maximum power dissipation. The device is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package form factor and thermal operating window. Alternative sources may be required due to inventory availability, supply chain considerations, or design flexibility requirements.

Substiute Parts

IXTH24N50L

IXYSIn Stock: 688152IXTH24N50L Datasheet

Current PartRFQ

APT24F50B

Microchip TechnologyIn Stock: 1002APT24F50B Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH24N50L is determined by strict alignment with the following critical parameters:

Mandatory Matching Criteria:

• FET Type: N-Channel configuration
• Drain to Source Voltage (Vdss): 500V rating
• Continuous Drain Current (Id): 24A at 25°C
• Package Form Factor: TO-247-3 through-hole mounting
• Operating Temperature Range: -55°C to 150°C (TJ)
• Regulatory Compliance: RoHS3 Compliant, REACH Unaffected

Allowable Variation Parameters:

• Power Dissipation (Max): Substitute must meet or exceed 400W (Tc)
• On-State Resistance (Rds On): Lower values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Variation acceptable within thermal and electrical performance envelope

The APT24F50B from Microchip Technology meets all mandatory criteria and qualifies as a direct substitute for the IXTH24N50L.

Parameter Comparison

Engineering Selection Recommendations

IXTH24N50L (IXYS) is the primary component specification. This device is Active in product status with established supply inventory (688,100 pcs) and full regulatory compliance including RoHS3 and REACH Unaffected status. The IXTH24N50L operates across the full -55°C to 150°C temperature range with 400W maximum power dissipation capability.

APT24F50B (Microchip Technology) qualifies as a direct electrical and mechanical substitute. This device maintains identical voltage and current ratings (500V Vdss, 24A Id) within the same TO-247-3 package footprint and operating temperature envelope. The APT24F50B is also Active in product status with RoHS3 and REACH Unaffected compliance. The substitute exhibits lower on-state resistance (240 mOhm vs. 300 mOhm) and reduced gate charge (90 nC vs. 160 nC), indicating improved switching efficiency. However, the APT24F50B has a lower maximum power dissipation rating (335W vs. 400W), which must be evaluated against specific application thermal requirements. Current inventory for the APT24F50B is limited (983 pcs).

Selection between these parts depends on thermal design margins, switching frequency requirements, and supply availability. Both devices are suitable for direct pin-compatible replacement in TO-247 socket applications.

Frequently Asked Questions (FAQ)

Q: Can the APT24F50B replace the IXTH24N50L in all applications?

A: The APT24F50B is electrically and mechanically compatible for direct substitution in TO-247 socket applications. Both devices share identical voltage (500V), current (24A), and temperature ratings (-55°C to 150°C). However, the APT24F50B has a lower maximum power dissipation rating (335W vs. 400W). Applications operating near the 400W thermal limit require verification that the substitute's 335W rating provides adequate margin for the specific thermal environment and duty cycle.

Q: What are the key differences between these two parts?

A: The primary differences are manufacturer-specific performance characteristics. The APT24F50B exhibits lower on-state resistance (240 mOhm at 11A, 10V vs. 300 mOhm at 500mA, 20V) and significantly lower gate charge (90 nC vs. 160 nC), resulting in reduced switching losses and improved efficiency. The IXTH24N50L provides higher power dissipation capability (400W vs. 335W). Input capacitance differs slightly (3630 pF vs. 2500 pF), which may affect gate drive circuit design.

Q: Are both parts RoHS3 compliant?

A: Yes. Both the IXTH24N50L and APT24F50B are RoHS3 Compliant with REACH Unaffected status, meeting current environmental and regulatory requirements for electronic component manufacturing and use.

Q: What is the significance of the TO-247-3 package?

A: The TO-247-3 package is a through-hole, three-terminal configuration (Gate, Drain, Source) designed for high-power applications. Both parts use identical TO-247-3 package geometry, enabling direct mechanical and electrical compatibility in PCB layouts and socket-based designs. The package provides robust thermal coupling through the drain tab for heat dissipation.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the transistor on and off. The APT24F50B requires significantly less gate charge (90 nC vs. 160 nC), reducing the current demand on gate drive circuits and enabling faster switching transitions. This difference may allow use of lower-power gate drivers or higher switching frequencies with the APT24F50B, but existing gate drive circuits designed for the IXTH24N50L will function with the substitute.

Q: What inventory considerations apply to these parts?

A: The IXTH24N50L has substantial inventory availability (688,100 pcs), supporting immediate procurement and long-term supply security. The APT24F50B has limited current inventory (983 pcs), which may impact lead times for high-volume orders. Supply chain strategy should account for these availability differences.