IXTH22N50P N-Channel 500V 22A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH22N50P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage with 22A continuous drain current at 25°C. Manufactured by IXYS in the Polar series, this device is housed in a TO-247 through-hole package and is designed for high-voltage switching applications requiring 350W maximum power dissipation. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified when design requirements permit operation at reduced current ratings, alternative package configurations, or when primary part availability is constrained. Substitution eligibility is determined by matching drain-to-source voltage (Vdss), gate-source voltage (Vgs) ratings, technology platform, and through-hole mounting compatibility.

Substiute Parts

IXTH22N50P
IXYSIn Stock: 1071IXTH22N50P Datasheet
IXTH22N50P
Current Part
STP19NM50N
STMicroelectronicsIn Stock: 2169STP19NM50N Datasheet
STP19NM50N
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STW14NK50Z
STMicroelectronicsIn Stock: 5526STW14NK50Z Datasheet
STW14NK50Z
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STW20NK50Z
STMicroelectronicsIn Stock: 7836STW20NK50Z Datasheet
STW20NK50Z
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Key Parameters

Parameter Value Unit
Manufacturer Part Number IXTH22N50P
Manufacturer IXYS
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 22 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 270 mOhm @ 11A, 10V
Vgs (Max) ±30 V
Power Dissipation (Max) 350 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case TO-247-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant
Product Status Active

Substitute Part Grouping Explanation

Substitute parts for the IXTH22N50P are qualified based on the following substitution criteria:

Primary Matching Parameters:

  • Drain-to-Source Voltage (Vdss): 500V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET Metal Oxide (exact match required)
  • Mounting Type: Through Hole (exact match required)
  • Gate-Source Voltage (Vgs Max): ±25V or ±30V (compatible range)
  • RoHS3 Compliance: Required
  • Product Status: Active (required)

Secondary Consideration Parameters:

  • Current - Continuous Drain (Id): Substitutes rated at 14A or 17A are acceptable for applications where the full 22A rating is not required
  • Power Dissipation (Max): Substitutes rated at 110W, 150W, or 190W are acceptable for reduced power applications
  • Package Configuration: TO-220-3 and TO-247-3 packages are both through-hole configurations; TO-247-3 maintains identical footprint compatibility with the main part

The three substitute parts listed below satisfy all primary matching parameters and are therefore electrically and mechanically compatible with the IXTH22N50P within their respective current and power ratings.

Parameter Comparison

Parameter IXTH22N50P (Main) STP19NM50N STW14NK50Z STW20NK50Z
Manufacturer IXYS STMicroelectronics STMicroelectronics STMicroelectronics
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 22 A (Tc) 14 A (Tc) 14 A (Tc) 17 A (Tc)
Drive Voltage (Max Rds On) 10 V 10 V 10 V 10 V
Rds On (Max) @ Id, Vgs 270 mOhm @ 11A, 10V 250 mOhm @ 7A, 10V 380 mOhm @ 6A, 10V 270 mOhm @ 8.5A, 10V
Vgs (Max) ±30 V ±25 V ±30 V ±30 V
Power Dissipation (Max) 350 W (Tc) 110 W (Tc) 150 W (Tc) 190 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ) 150 °C (TJ) -55 to 150 °C (TJ) 150 °C (TJ)
Package / Case TO-247-3 TO-220-3 TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active

Engineering Selection Recommendations

STP19NM50N (STMicroelectronics MDmesh™ II Series)

The STP19NM50N is suitable for applications where continuous drain current requirements do not exceed 14A and power dissipation remains below 110W. This part operates at a maximum gate-source voltage of ±25V, which is 5V lower than the IXTH22N50P. The TO-220 package requires different PCB footprint and heatsink mounting provisions compared to the TO-247 configuration. This substitute is appropriate for lower-power variants of existing designs or space-constrained applications where TO-220 mounting is acceptable. All regulatory compliance certifications match the main part.

STW14NK50Z (STMicroelectronics SuperMESH™ Series)

The STW14NK50Z maintains identical TO-247-3 package compatibility with the IXTH22N50P and supports the full ±30V gate-source voltage range. Continuous drain current is rated at 14A with maximum power dissipation of 150W. Operating temperature range extends from -55°C to 150°C, matching the main part specification. This substitute is appropriate for applications requiring the same mechanical footprint but operating at reduced current levels. RoHS3 compliance and Active product status are confirmed.

STW20NK50Z (STMicroelectronics SuperMESH™ Series)

The STW20NK50Z provides the closest current rating match at 17A continuous drain current, with 190W maximum power dissipation. This part maintains TO-247-3 package compatibility and supports ±30V gate-source voltage. The operating temperature specification is listed as 150°C maximum (TJ), which does not include the lower -55°C bound specified for the main part. This substitute is appropriate for applications where current requirements fall between 14A and 17A and where the upper temperature limit of 150°C is sufficient. RoHS3 compliance and Active product status are confirmed.

All three substitute parts carry Active product status, full RoHS3 compliance, and REACH Unaffected designation, ensuring regulatory compatibility with the IXTH22N50P in equivalent applications.

Frequently Asked Questions (FAQ)

Q: Can the STP19NM50N replace the IXTH22N50P in all applications?

A: The STP19NM50N is electrically compatible at the 500V Vdss level but is limited to 14A continuous drain current versus the IXTH22N50P's 22A rating. Additionally, the STP19NM50N uses a TO-220 package rather than TO-247, requiring different PCB layout and heatsink mounting. Substitution is valid only for applications where current demand does not exceed 14A and the TO-220 footprint is acceptable.

Q: What is the primary difference between STW14NK50Z and STW20NK50Z?

A: Both parts use the SuperMESH™ technology platform and maintain TO-247-3 package compatibility with the IXTH22N50P. The STW20NK50Z provides higher continuous drain current (17A versus 14A) and greater power dissipation capability (190W versus 150W). The STW14NK50Z offers lower on-resistance at its rated current level. Selection depends on the specific current and power requirements of the application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXTH22N50P and all three substitute parts (STP19NM50N, STW14NK50Z, STW20NK50Z) carry RoHS3 Compliant certification and REACH Unaffected status, ensuring regulatory equivalence for applications subject to these requirements.

Q: Does the STP19NM50N support the same gate-source voltage as the IXTH22N50P?

A: No. The STP19NM50N is rated for ±25V maximum gate-source voltage, while the IXTH22N50P supports ±30V. Applications requiring the full ±30V gate drive capability must use either the STW14NK50Z or STW20NK50Z, both of which support ±30V Vgs (Max).

Q: Can I use STW20NK50Z as a direct replacement for IXTH22N50P?

A: The STW20NK50Z is mechanically and electrically compatible at the 500V Vdss level and maintains TO-247-3 package compatibility. However, the continuous drain current rating is 17A, which is lower than the IXTH22N50P's 22A. Substitution is valid for applications where current demand does not exceed 17A. The operating temperature specification for STW20NK50Z lists 150°C (TJ) maximum without a specified lower bound; verify that this meets your application's temperature range requirements.

Q: What is the impact of different Rds On values among the substitute parts?

A: On-resistance (Rds On) directly affects power dissipation and heat generation. The IXTH22N50P exhibits 270 mOhm at 11A and 10V gate drive. The STW20NK50Z matches this value at 8.5A and 10V. The STP19NM50N provides lower on-resistance (250 mOhm) but at reduced current (7A). The STW14NK50Z exhibits higher on-resistance (380 mOhm) at 6A. Selection should account for the specific operating current and thermal management requirements of the application.

Q: Are there package footprint differences that affect PCB design?

A: Yes. The IXTH22N50P and both STW series parts use TO-247-3 packages with identical footprints. The STP19NM50N uses a TO-220 package, which has a different pin configuration and mounting footprint. TO-220 devices require different PCB layout and typically use different heatsink mounting hardware. Direct PCB substitution is possible only between IXTH22N50P and the STW series parts.

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