IXTH20N60 N-Channel 600V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH20N60 is an N-Channel 600V 20A MOSFET manufactured by IXYS in the MegaMOS™ series. This through-hole TO-247 device is rated for 300W continuous power dissipation and operates across the temperature range of -55°C to 150°C. The part is currently active in production with 13,388 units in stock.

Equivalent and substitute parts are identified based on matching or exceeding the electrical specifications and mechanical compatibility of the IXTH20N60. Substitutes are selected when they maintain the same drain-source voltage rating, support the required continuous drain current, operate within compatible temperature ranges, and share the same through-hole TO-247 package configuration.

Substiute Parts

IXTH20N60
IXYSIn Stock: 13448IXTH20N60 Datasheet
IXTH20N60
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IXTH26N60P
IXYSIn Stock: 1479IXTH26N60P Datasheet
IXTH26N60P
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AOK20N60L
Alpha & Omega Semiconductor Inc.In Stock: 8108AOK20N60L Datasheet
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APT47N60BC3G
Microchip TechnologyIn Stock: 1799APT47N60BC3G Datasheet
APT47N60BC3G
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IPW60R075CPFKSA1
Infineon TechnologiesIn Stock: 1118IPW60R075CPFKSA1 Datasheet
IPW60R075CPFKSA1
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IPW60R099CPFKSA1
Infineon TechnologiesIn Stock: 1051IPW60R099CPFKSA1 Datasheet
IPW60R099CPFKSA1
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SPW15N60C3FKSA1
Infineon TechnologiesIn Stock: 1173SPW15N60C3FKSA1 Datasheet
SPW15N60C3FKSA1
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SPW20N60C3FKSA1
Infineon TechnologiesIn Stock: 2967SPW20N60C3FKSA1 Datasheet
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SPW35N60CFDFKSA1
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 20 A
On-State Resistance (Rds On) @ 10A, 10V 350 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4.5 V
Gate Charge (Qg) @ 10V 170 nC
Input Capacitance (Ciss) @ 25V 4500 pF
Power Dissipation (Max) 300 W
Operating Temperature Range -55 to 150 °C
Package Type TO-247-3 Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution logic for the IXTH20N60 is based on the following criteria:

Primary Substitution Parameters:

  • Drain-Source Voltage (Vdss): Must equal or exceed 600V
  • Continuous Drain Current (Id): Must equal or exceed 20A at 25°C
  • Package Type: Must be TO-247-3 through-hole configuration
  • Operating Temperature Range: Must encompass -55°C to 150°C
  • Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Factors:

  • On-State Resistance (Rds On): Lower values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Power Dissipation Rating: Higher ratings provide thermal margin
  • RoHS and REACH Compliance: Must maintain regulatory alignment

Substitutes are grouped into two categories:

Direct Equivalents (Same Current Rating): Parts with 20A continuous drain current rating, matching the IXTH20N60 specification exactly.

Higher Current Capability Substitutes: Parts rated for 26A or greater continuous drain current, providing enhanced current handling while maintaining voltage and package compatibility. These parts are suitable when higher current capacity is acceptable or beneficial.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Power Diss. (W) Product Status Package
IXTH20N60 IXYS 600 20 350 @ 10A 170 @ 10V 300 Active TO-247-3
AOK20N60L Alpha & Omega 600 20 370 @ 10A 74 @ 10V 417 Obsolete TO-247-3
IXTH26N60P IXYS 600 26 270 @ 500mA 72 @ 10V 460 Active TO-247-3
SPW20N60C3FKSA1 Infineon 650 20.7 190 @ 13.1A 114 @ 10V 208 Active TO-247-3
SPW35N60CFDFKSA1 Infineon 600 34.1 118 @ 21.6A 212 @ 10V 313 Not For New Designs TO-247-3
IPW60R099CPFKSA1 Infineon 650 31 99 @ 18A 80 @ 10V 255 Not For New Designs TO-247-3
IPW60R075CPFKSA1 Infineon 650 39 75 @ 26A 116 @ 10V 313 Not For New Designs TO-247-3
APT47N60BC3G Microchip 600 47 70 @ 30A 260 @ 10V 417 Active TO-247-3
SPW15N60C3FKSA1 Infineon 650 15 280 @ 9.4A 63 @ 10V 156 Last Time Buy TO-247-3

Engineering Selection Recommendations

For New Designs:

Select SPW20N60C3FKSA1 (Infineon CoolMOS™) as the primary substitute. This part is Active in production status, maintains 650V Vdss rating (exceeding the 600V requirement), delivers 20.7A continuous drain current (matching the 20A specification), and offers superior on-state resistance of 190mOhm compared to the IXTH20N60's 350mOhm. The part is ROHS3 compliant and REACH unaffected, with 2,888 units in stock.

Alternatively, select IXTH26N60P (IXYS Polar series) for applications requiring higher current capacity. This part is Active in production, rated for 26A continuous drain current at 600V, and provides improved on-state resistance of 270mOhm. It maintains full regulatory compliance and has 1,430 units in stock.

For High Current Applications:

Select APT47N60BC3G (Microchip) when maximum current handling is required. This part is Active in production, rated for 47A continuous drain current at 600V, and features the lowest on-state resistance at 70mOhm. It is ROHS3 compliant with 1,703 units in stock.

For Existing Designs (Maintenance/Repair):

The AOK20N60L (Alpha & Omega) provides direct electrical equivalence with 20A continuous drain current at 600V. However, this part is marked Obsolete. Use only if existing inventory is available and no alternative is acceptable. The part is ROHS3 compliant with 8,050 units currently in stock.

Parts to Avoid for New Designs:

Do not select SPW35N60CFDFKSA1, IPW60R099CPFKSA1, or IPW60R075CPFKSA1 for new designs. These Infineon CoolMOS™ parts are marked "Not For New Designs" and represent legacy technology. SPW15N60C3FKSA1 is marked "Last Time Buy" and should not be selected for new applications.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with higher drain current rating than the IXTH20N60?

A: Yes. Parts rated for 26A, 31A, 39A, or 47A continuous drain current are electrically compatible with applications designed for 20A operation. The higher current rating provides additional thermal and electrical margin. Verify that the circuit design does not impose constraints on gate charge, input capacitance, or on-state resistance that would be negatively affected by the substitute part's characteristics.

Q: What is the difference between the IXTH20N60 and SPW20N60C3FKSA1?

A: Both parts are rated for approximately 20A continuous drain current at 10V gate drive. The SPW20N60C3FKSA1 features a higher Vdss rating (650V vs. 600V), lower on-state resistance (190mOhm vs. 350mOhm), and lower gate charge (114nC vs. 170nC). The SPW20N60C3FKSA1 is currently Active in production, while the IXTH20N60 is also Active. The SPW20N60C3FKSA1 offers superior switching performance and thermal characteristics.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All substitute parts listed are configured in the TO-247-3 through-hole package. This ensures mechanical and thermal interface compatibility with existing PCB designs and heat sink mounting arrangements.

Q: What is the significance of the "Not For New Designs" product status?

A: Parts marked "Not For New Designs" are legacy components that manufacturers no longer recommend for new circuit development. These parts may have limited future availability, extended lead times, or have been superseded by improved alternatives. For new applications, select parts with "Active" status.

Q: How do I determine if a substitute part's on-state resistance is acceptable for my application?

A: On-state resistance (Rds On) directly affects power dissipation and heat generation. Lower Rds On values reduce I²R losses. Compare the substitute part's Rds On to the IXTH20N60's 350mOhm specification. Parts with lower Rds On (such as SPW20N60C3FKSA1 at 190mOhm) reduce thermal load. Parts with higher Rds On (such as AOK20N60L at 370mOhm) increase thermal load. Verify that your thermal design accommodates the substitute part's power dissipation rating.

Q: Can I use the IXTH26N60P as a direct replacement in existing IXTH20N60 designs?

A: Yes. The IXTH26N60P is mechanically and electrically compatible. Both parts are IXYS devices in the TO-247-3 package with 600V Vdss rating. The IXTH26N60P's higher 26A current rating and lower 270mOhm on-state resistance provide improved performance. Gate charge is significantly lower (72nC vs. 170nC), which may reduce switching losses. Verify that the circuit design does not impose constraints on input capacitance or gate drive characteristics.

Q: What does RoHS3 compliance mean for component substitution?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates that the component meets European Union environmental standards restricting the use of specific hazardous materials. All substitute parts listed are ROHS3 compliant, ensuring regulatory alignment with the original IXTH20N60. This compliance is maintained across all substitution options.

Q: Is the IXTH20N60 suitable for new designs, or should I select a substitute?

A: The IXTH20N60 is marked Active in production and is suitable for new designs. However, the SPW20N60C3FKSA1 offers superior electrical characteristics (lower Rds On, lower gate charge, higher Vdss) and is also Active in production. For new designs, evaluate both parts based on your specific application requirements for switching frequency, thermal management, and gate drive capabilities.

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