IXTH200N10T N-Channel 100V 200A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH200N10T is an N-Channel MOSFET manufactured by IXYS, designed for high-current switching applications requiring 100V drain-to-source voltage capability. This device operates in the Through Hole TO-247 package and is classified as an active product with full RoHS3 compliance. The part is based on Trench technology and delivers 200A continuous drain current at 25°C with 550W maximum power dissipation.

Substitute parts are identified when equivalent electrical performance parameters align within acceptable tolerances for the application, maintaining compatibility across voltage ratings, current handling, thermal characteristics, and package form factors. Substitution becomes necessary due to inventory availability, supply chain considerations, or design flexibility requirements.

Substiute Parts

IXTH200N10T

IXYSIn Stock: 5763IXTH200N10T Datasheet

Current PartRFQ

IRFP4310ZPBF

Infineon TechnologiesIn Stock: 16103IRFP4310ZPBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTH200N10T are identified based on strict alignment of the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Drain-to-source voltage (Vdss) must equal 100V to ensure safe operation within the same circuit topology.

Current Handling: Continuous drain current (Id) at 25°C establishes the current-carrying capacity. Substitutes must support the required application current without exceeding thermal limits.

On-State Resistance (Rds On): Measured at specified gate voltage and drain current conditions, this parameter directly affects power dissipation and thermal performance. Lower Rds On values indicate improved efficiency.

Gate Charge (Qg): Determines switching speed and gate drive requirements. Variations affect circuit timing and driver compatibility.

Thermal Characteristics: Maximum power dissipation (Tc) and operating temperature range define thermal performance boundaries.

Package Compatibility: TO-247-3 Through Hole packaging ensures mechanical and thermal interface compatibility with existing PCB designs.

Regulatory Compliance: RoHS3 compliance, REACH status, and MSL rating must match or exceed the original part specifications.

The IRFP4310ZPBF is identified as a substitute based on matching voltage rating (100V Vdss), compatible package (TO-247-3), identical operating temperature range (-55°C to 175°C), and equivalent regulatory compliance status.

Parameter Comparison

Engineering Selection Recommendations

Primary Part Selection: The IXTH200N10T remains the preferred choice for applications requiring the full 200A continuous drain current specification. This part delivers superior current-handling capacity and higher maximum power dissipation (550W), making it suitable for high-power switching applications with demanding thermal requirements.

Substitute Part Selection: The IRFP4310ZPBF serves as a functional substitute for applications where the continuous drain current requirement does not exceed 120A. Both parts share identical voltage ratings (100V Vdss), operating temperature ranges (-55°C to 175°C), and regulatory compliance certifications (RoHS3, REACH Unaffected, MSL 1).

Compliance Alignment: Both parts maintain active product status and full RoHS3 compliance, ensuring compatibility with current manufacturing and environmental standards. Moisture sensitivity level (MSL 1) indicates unlimited shelf life under standard storage conditions for both devices.

Gate Drive Considerations: The IRFP4310ZPBF exhibits slightly higher gate charge (170 nC versus 152 nC) and lower maximum gate voltage (±20V versus ±30V). Existing gate drive circuits designed for the IXTH200N10T operate within the IRFP4310ZPBF specifications without modification.

Thermal Performance Trade-off: The IRFP4310ZPBF maximum power dissipation (280W) is lower than the IXTH200N10T (550W). Applications operating near thermal limits of the original part require thermal analysis to confirm the substitute remains within acceptable operating conditions.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4310ZPBF directly replace the IXTH200N10T in all applications?

A: Direct replacement is valid only when the application continuous drain current requirement does not exceed 120A. Both parts share identical voltage ratings, package types, and operating temperature ranges. Applications requiring the full 200A capability of the IXTH200N10T cannot use the IRFP4310ZPBF as a substitute.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are continuous drain current (200A versus 120A), maximum power dissipation (550W versus 280W), maximum gate voltage (±30V versus ±20V), and gate charge specifications (152 nC versus 170 nC). Voltage rating, package type, and operating temperature range are identical.

Q: Are there any gate drive circuit modifications required when substituting the IRFP4310ZPBF for the IXTH200N10T?

A: No modifications are required. The IRFP4310ZPBF gate voltage specification (±20V) is within the design envelope of circuits rated for the IXTH200N10T (±30V). Gate charge differences (170 nC versus 152 nC) are minor and do not necessitate driver redesign.

Q: How does the on-state resistance (Rds On) comparison affect circuit performance?

A: The IXTH200N10T exhibits lower Rds On (5.5 mOhm @ 50A, 10V) compared to the IRFP4310ZPBF (6 mOhm @ 75A, 10V). Lower on-state resistance reduces conduction losses and heat generation. Applications sensitive to power dissipation should account for this 0.5 mOhm difference in thermal calculations.

Q: Are both parts suitable for high-frequency switching applications?

A: Both parts operate within the same frequency range based on matching gate charge and input capacitance characteristics. The IXTH200N10T exhibits lower input capacitance (9400 pF @ 25V) compared to the IRFP4310ZPBF (6860 pF @ 50V), measured at different reference voltages. Switching frequency capability is determined by gate drive circuit design and thermal management rather than these parameter differences.

Q: What is the impact of the lower maximum power dissipation of the IRFP4310ZPBF?

A: The IRFP4310ZPBF maximum power dissipation (280W) is 49% lower than the IXTH200N10T (550W). In applications operating near thermal limits, the substitute part may require enhanced heat sinking or reduced duty cycle to maintain junction temperature within the -55°C to 175°C operating range.

Q: Are both parts available in the same packaging format?

A: Yes. Both the IXTH200N10T and IRFP4310ZPBF use TO-247-3 Through Hole packaging. PCB footprints, mounting hardware, and thermal interface requirements are identical, enabling direct mechanical substitution.

Q: Do both parts meet current environmental and regulatory requirements?

A: Yes. Both parts are RoHS3 compliant, REACH Unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings. Regulatory compliance is equivalent for both devices.