IXTH182N055T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH182N055T is an N-Channel MOSFET manufactured by IXYS, rated for 55V drain-to-source voltage with 182A continuous drain current in a Through Hole TO-247 package. This device is part of the TrenchMV™ series and is currently classified as obsolete. Due to its obsolete status, equivalent substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	182	A
On-State Resistance (Rds On Max) @ 10V	5	mOhm
Gate Threshold Voltage (Vgs th) Max	4	V
Gate Charge (Qg) Max @ 10V	114	nC
Input Capacitance (Ciss) Max @ 25V	4850	pF
Power Dissipation Max	360	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	—
Package Type	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IXTH182N055T is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel MOSFET technology
Mounting Type: Through Hole configuration
Package: TO-247-3 compatible footprint
Operating Temperature Range: -55°C to 175°C (TJ)
Gate Drive Voltage: 10V maximum Rds On specification
Maximum Gate Voltage: ±20V

Secondary Compatibility Parameters:

Drain-to-Source Voltage (Vdss) rating must equal or exceed 55V
Continuous Drain Current (Id) must meet or exceed 182A at 25°C
On-State Resistance (Rds On) must not exceed 5 mOhm at specified conditions
Gate Threshold Voltage must be compatible with 4V specification
Input Capacitance and Gate Charge must be within acceptable switching performance ranges

The substitute parts listed below satisfy these criteria while offering active product status and improved availability.

Parameter Comparison

Parameter	IXTH182N055T	IRFP2907PBF	IRFP3306PBF	Unit
Manufacturer	IXYS	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	55	75	60	V
Continuous Drain Current (Id) @ 25°C	182	209	120	A
On-State Resistance (Rds On Max) @ 10V	5	4.5	4.2	mOhm
Gate Threshold Voltage (Vgs th) Max	4	4	4	V
Gate Charge (Qg) Max @ 10V	114	620	120	nC
Input Capacitance (Ciss) Max	4850	13000	4520	pF
Power Dissipation Max	360	470	220	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C
Mounting Type	Through Hole	Through Hole	Through Hole	—
Package Type	TO-247-3	TO-247-3	TO-247-3	—
Product Status	Obsolete	Active	Active	—
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

IRFP2907PBF Selection Criteria:

The IRFP2907PBF is suitable for applications requiring higher voltage margin and increased current capacity. This device provides 75V Vdss rating (20V higher than the original), 209A continuous drain current (27A higher than the original), and improved power dissipation capability at 470W. The lower on-state resistance of 4.5 mOhm reduces conduction losses. This substitute is recommended for designs where the higher voltage rating provides system-level benefits or where the increased current capacity improves thermal performance. The IRFP2907PBF carries active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment.

IRFP3306PBF Selection Criteria:

The IRFP3306PBF is suitable for applications with lower current requirements or where power dissipation constraints exist. This device provides 60V Vdss rating (5V higher than the original) and 120A continuous drain current. The gate charge specification of 120 nC is comparable to the original part, and input capacitance of 4520 pF closely matches the original 4850 pF, resulting in similar switching characteristics. The IRFP3306PBF carries active product status and ROHS3 compliance. This substitute is recommended for designs where current requirements do not exceed 120A and where the lower power dissipation rating of 220W is acceptable.

Both substitute parts maintain compatibility with the original TO-247-3 footprint, operate across the identical temperature range of -55°C to 175°C, and support the same ±20V gate voltage specification. Both are manufactured by Infineon Technologies under the HEXFET® series and carry REACH Unaffected status.

Frequently Asked Questions (FAQ)

Q: Can the IRFP2907PBF directly replace the IXTH182N055T in all applications?

A: The IRFP2907PBF is electrically compatible with the IXTH182N055T for applications operating at or below 55V. The higher 75V rating provides additional voltage margin. The increased gate charge of 620 nC (compared to 114 nC) requires verification that the gate driver can supply the additional charge without exceeding switching time specifications. The higher input capacitance of 13000 pF may increase gate drive power consumption. Physical footprint compatibility is confirmed for TO-247-3 packages.

Q: Can the IRFP3306PBF directly replace the IXTH182N055T in all applications?

A: The IRFP3306PBF is suitable for applications where continuous drain current does not exceed 120A. Applications requiring the full 182A rating of the original part cannot use this substitute. The IRFP3306PBF offers comparable gate charge and input capacitance characteristics, making it suitable for designs with similar switching requirements. Physical footprint compatibility is confirmed for TO-247-3 packages.

Q: What is the impact of different on-state resistance values?

A: The IXTH182N055T specifies 5 mOhm maximum on-state resistance at 25A and 10V. The IRFP2907PBF specifies 4.5 mOhm at 125A and 10V, and the IRFP3306PBF specifies 4.2 mOhm at 75A and 10V. Lower on-state resistance reduces conduction losses and heat generation. Both substitutes offer lower on-state resistance, which improves efficiency and thermal performance in the application.

Q: Are there package compatibility concerns?

A: All three devices use the TO-247-3 package configuration. The IXTH182N055T uses the IXTH variant, while the substitutes use the TO-247AC variant. Both variants maintain identical pin configuration and footprint compatibility for Through Hole mounting. No PCB layout modifications are required.

Q: What is the significance of product status differences?

A: The IXTH182N055T is classified as obsolete, indicating that IXYS has discontinued production and support. The IRFP2907PBF and IRFP3306PBF are both active products from Infineon Technologies, ensuring continued manufacturing, technical support, and long-term availability. Active product status is critical for new production designs and field replacement scenarios.

Q: Do the substitute parts meet current regulatory requirements?

A: Both IRFP2907PBF and IRFP3306PBF carry ROHS3 compliance certification, meeting current European Union Restriction of Hazardous Substances regulations. All three devices maintain REACH Unaffected status. The substitutes are suitable for applications with regulatory compliance requirements.

Q: How do gate charge differences affect circuit design?

A: The IXTH182N055T specifies 114 nC gate charge at 10V. The IRFP2907PBF specifies 620 nC, and the IRFP3306PBF specifies 120 nC. Higher gate charge requires the gate driver to supply more charge per switching cycle, increasing gate drive power consumption and potentially extending switching times. The IRFP3306PBF gate charge of 120 nC is nearly identical to the original, requiring minimal gate driver adjustment. The IRFP2907PBF requires gate driver verification to ensure adequate charge delivery capability.

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