IXTH16P20 Equivalent & Substitute Parts

Part Overview

The IXTH16P20 is a P-Channel MOSFET rated for 200V drain-to-source voltage with 16A continuous drain current at 25°C. This device is packaged in a TO-247 through-hole configuration and is rated for 300W maximum power dissipation. The IXTH16P20 is designated as Last Time Buy, indicating that the original manufacturer has discontinued or will discontinue production. Identification of equivalent and substitute parts is necessary to ensure design continuity and procurement availability for new production runs and field replacements.

Substiute Parts

IXTH16P20

IXYSIn Stock: 1033IXTH16P20 Datasheet

Current PartRFQ

IXTH26P20P

IXYSIn Stock: 2303IXTH26P20P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTH16P20 is based on the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

• FET Type: P-Channel
• Drain to Source Voltage (Vdss): 200V
• Package / Case: TO-247-3
• Mounting Type: Through Hole
• Technology: MOSFET (Metal Oxide)

Allowable Variation Parameters:

• Continuous Drain Current (Id): Equal to or greater than 16A
• Power Dissipation (Max): Equal to or greater than 300W
• Operating Temperature Range: Equal to or greater than -55°C to 150°C
• Gate Charge (Qg): Lower values are acceptable
• On-Resistance (Rds On): Lower values are acceptable

The IXTH26P20P qualifies as a direct substitute because it maintains identical voltage rating, package type, and mounting configuration while providing higher current capability (26A versus 16A) and equivalent power dissipation (300W). The substitute part operates across an extended temperature range (-55°C to 175°C) and exhibits lower gate charge and comparable on-resistance characteristics.

Parameter Comparison

Engineering Selection Recommendations

The IXTH26P20P is the manufacturer-recommended substitute for the IXTH16P20. Both devices are manufactured by IXYS and comply with ROHS3 and REACH requirements. The IXTH26P20P is designated as Active product status, ensuring continued availability and supply chain stability compared to the Last Time Buy status of the IXTH16P20.

The IXTH26P20P provides enhanced performance characteristics suitable for direct replacement in existing designs:

• Higher continuous drain current rating (26A versus 16A) provides additional design margin and thermal headroom
• Lower gate charge (56 nC versus 95 nC) reduces gate drive power requirements and improves switching speed
• Extended operating temperature range (-55°C to 175°C versus -55°C to 150°C) accommodates more demanding thermal environments
• Identical voltage rating, package configuration, and power dissipation rating ensure mechanical and electrical compatibility

No design modifications are required for substitution. The IXTH26P20P operates within the same electrical specifications and physical constraints as the IXTH16P20.

Frequently Asked Questions (FAQ)

Q: Can the IXTH26P20P be used as a direct replacement for the IXTH16P20 without circuit modifications?

A: Yes. The IXTH26P20P maintains identical drain-to-source voltage (200V), package type (TO-247-3), and power dissipation rating (300W). The higher current rating (26A versus 16A) and lower gate charge are compatible with existing circuit designs and do not require modifications.

Q: What is the significance of the higher current rating on the IXTH26P20P?

A: The IXTH26P20P is rated for 26A continuous drain current compared to 16A on the IXTH16P20. This higher rating provides additional thermal margin and allows the device to operate at lower junction temperatures under the same load conditions, extending device lifetime and improving reliability.

Q: Are there any thermal management differences between these devices?

A: Both devices are rated for 300W maximum power dissipation and use identical TO-247-3 packaging. Thermal performance depends on PCB layout, heatsink design, and ambient conditions rather than device differences. The IXTH26P20P's higher current capability may result in lower on-state power dissipation at rated current levels.

Q: Does the lower gate charge on the IXTH26P20P affect gate drive circuit design?

A: The IXTH26P20P exhibits lower gate charge (56 nC versus 95 nC), which reduces the charge that must be supplied by the gate drive circuit. Existing gate drive circuits designed for the IXTH16P20 will operate with the IXTH26P20P without modification. Lower gate charge may improve switching speed and reduce gate drive power consumption.

Q: Are both devices RoHS and REACH compliant?

A: Yes. Both the IXTH16P20 and IXTH26P20P are ROHS3 Compliant and REACH Unaffected, meeting environmental and regulatory requirements for commercial and industrial applications.

Q: What is the difference in product status between these devices?

A: The IXTH16P20 is designated Last Time Buy, indicating discontinued or discontinuing production. The IXTH26P20P is designated Active, ensuring continued manufacturing and supply availability. Substitution to the IXTH26P20P eliminates supply chain risk associated with end-of-life products.

Q: Can the IXTH26P20P be used in applications requiring operation above 150°C?

A: The IXTH26P20P is rated for operating temperatures up to 175°C, compared to 150°C for the IXTH16P20. Applications requiring operation in the 150°C to 175°C range benefit from the extended temperature rating of the substitute device.