IXTH16N10D2 Equivalent & Substitute Parts

Part Overview

The IXTH16N10D2 is an N-Channel depletion-mode MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage and 16A continuous drain current in a Through Hole TO-247 package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement requirements. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating the transition from obsolete to active product status.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	16	A
Rds On (Max) @ 8A, 0V	64	mOhm
Gate Charge (Qg) @ 5V	225	nC
Input Capacitance (Ciss) @ 25V	5700	pF
Power Dissipation (Max)	830	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-247-3	Through Hole
FET Feature	Depletion Mode
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitute parts for the IXTH16N10D2 are categorized based on the following substitution criteria:

Manufacturer Recommended Substitute (IXYS Series): The IXTH16N20D2 maintains identical drain current rating (16A), depletion-mode FET architecture, gate voltage specification (±20V), and Through Hole TO-247 package configuration. This substitute accommodates higher drain-to-source voltage (200V) and represents an active product within the same manufacturer family, providing direct functional replacement with enhanced voltage capability.

Similar Substitute (Infineon HEXFET Series): The IRFP140NPBF shares the 100V drain-to-source voltage rating and Through Hole TO-247 package, enabling voltage-class compatibility. However, this device operates as an enhancement-mode MOSFET with significantly higher continuous drain current (33A) and lower power dissipation (140W), representing a different FET architecture and operational class. This substitute is suitable for applications where enhanced current handling and reduced thermal load are acceptable design modifications.

Parameter Comparison

Parameter	IXTH16N10D2 (Main)	IXTH16N20D2 (MFR Recommended)	IRFP140NPBF (Similar)	Unit
Manufacturer	IXYS	IXYS	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100	200	100	V
Continuous Drain Current (Id) @ 25°C	16	16	33	A
Rds On (Max)	64 @ 8A, 0V	73 @ 8A, 0V	52 @ 16A, 10V	mOhm
Gate Charge (Qg) (Max)	225 @ 5V	208 @ 5V	94 @ 10V	nC
Input Capacitance (Ciss) (Max)	5700 @ 25V	5500 @ 25V	1400 @ 25V	pF
Power Dissipation (Max)	830	695	140	W
Operating Temperature Range	-55 to 175	-55 to 150	-55 to 175	°C
Vgs (Max)	±20	±20	±20	V
Package Type	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXTH16N20D2 Selection Criteria: This manufacturer-recommended substitute is the primary choice for direct replacement in applications where the IXTH16N10D2 is specified. Both devices maintain depletion-mode operation, identical drain current rating (16A), and equivalent gate voltage specifications (±20V). The IXTH16N20D2 is an active product with ROHS3 compliance and REACH unaffected status, ensuring long-term availability and regulatory compliance. The elevated drain-to-source voltage rating (200V versus 100V) provides design margin for voltage transient conditions. The reduced maximum operating temperature (150°C versus 175°C) must be evaluated against application thermal requirements. This substitute is suitable for direct PCB integration without layout modifications due to identical TO-247-3 package configuration.

IRFP140NPBF Selection Criteria: This substitute is applicable in applications where the 100V voltage class is maintained and enhanced current handling capability (33A versus 16A) is beneficial or acceptable. The IRFP140NPBF operates as an enhancement-mode MOSFET, requiring different gate drive voltage levels (10V drive voltage specified versus 0V for the depletion-mode IXTH16N10D2). The significantly lower power dissipation rating (140W versus 830W) indicates reduced thermal performance, requiring thermal design reassessment. This device is an active product with ROHS3 compliance and full operating temperature range (-55°C to 175°C). Selection of this substitute requires verification of gate drive circuit compatibility and thermal management adequacy for the target application.

Frequently Asked Questions (FAQ)

Q: Can the IXTH16N20D2 be used as a direct replacement for the IXTH16N10D2?

A: The IXTH16N20D2 is suitable for direct replacement in applications where the 100V drain-to-source voltage specification is not a hard constraint. Both devices share identical drain current rating (16A), depletion-mode operation, gate voltage specification (±20V), and TO-247-3 package configuration. The IXTH16N20D2 provides higher voltage capability (200V) and is an active product. The maximum operating temperature is reduced to 150°C; applications requiring operation above this temperature require thermal analysis.

Q: What are the key differences between the IXTH16N10D2 and IRFP140NPBF?

A: The primary differences are: (1) FET architecture—IXTH16N10D2 is depletion-mode; IRFP140NPBF is enhancement-mode; (2) Continuous drain current—IXTH16N10D2 is rated 16A; IRFP140NPBF is rated 33A; (3) Gate drive voltage—IXTH16N10D2 operates at 0V; IRFP140NPBF requires 10V drive voltage; (4) Power dissipation—IXTH16N10D2 is rated 830W; IRFP140NPBF is rated 140W; (5) Input capacitance—IXTH16N10D2 is 5700 pF; IRFP140NPBF is 1400 pF. Both share 100V drain-to-source voltage and TO-247-3 package.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXTH16N10D2 (main part), IXTH16N20D2 (manufacturer recommended), and IRFP140NPBF (similar substitute) are all ROHS3 compliant with Moisture Sensitivity Level 1 (unlimited). All parts are REACH unaffected and classified under ECCN EAR99.

Q: What is the significance of depletion-mode versus enhancement-mode operation?

A: Depletion-mode MOSFETs (IXTH16N10D2, IXTH16N20D2) conduct current in the absence of gate voltage and require negative gate voltage to turn off. Enhancement-mode MOSFETs (IRFP140NPBF) require positive gate voltage to conduct. This architectural difference necessitates different gate drive circuit designs and cannot be accommodated through passive component substitution alone.

Q: Can the IRFP140NPBF be used in applications designed for the IXTH16N10D2?

A: The IRFP140NPBF can be used only if the application circuit is redesigned to accommodate enhancement-mode gate drive requirements and the reduced power dissipation rating (140W versus 830W) is acceptable for thermal management. The identical 100V drain-to-source voltage and TO-247-3 package enable mechanical compatibility, but gate drive circuit modification is mandatory.

Q: What inventory status should be considered for procurement decisions?

A: The IXTH16N10D2 (main part) is obsolete with 15,465 units in stock. The IXTH16N20D2 (manufacturer recommended) is active with 739 units in stock. The IRFP140NPBF (similar substitute) is active with 15,700 units in stock. For long-term design support, active products (IXTH16N20D2 or IRFP140NPBF) are preferred over obsolete inventory.

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