IXTH14N100 Equivalent & Substitute Parts

Part Overview

The IXTH14N100 is an N-Channel 1000 V, 14A (Tc) MOSFET manufactured by IXYS in the MegaMOS™ series, housed in a TO-247 through-hole package. This device is rated for 360W power dissipation and operates across a temperature range of -55°C to 150°C (TJ). The product status is listed as Obsolete, necessitating identification of functionally equivalent alternatives from active manufacturers to maintain design continuity and ensure long-term component availability.

Substiute Parts

IXTH14N100

IXYSIn Stock: 5668IXTH14N100 Datasheet

Current PartRFQ

STW11NK100Z

STMicroelectronicsIn Stock: 2432STW11NK100Z Datasheet

SimilarRFQ

STW13NK100Z

STMicroelectronicsIn Stock: 5097STW13NK100Z Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTH14N100 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: All substitute parts must maintain the 1000 V Drain to Source Voltage (Vdss) specification to ensure safe operation in the intended application circuit.

Current Capability: The continuous drain current (Id) at 25°C must be sufficient to support the application load. The IXTH14N100 provides 14A; substitute parts with lower current ratings may be acceptable depending on actual circuit requirements, while higher ratings provide additional design margin.

Power Dissipation: The maximum power dissipation rating (360W Tc) establishes thermal performance requirements. Substitute parts with comparable or higher power ratings ensure thermal compatibility within the same thermal management design.

On-State Resistance (Rds On): The maximum on-state resistance of 820 mOhm at specified conditions directly affects conduction losses and heat generation. Lower Rds On values improve efficiency; higher values increase power dissipation.

Gate Charge (Qg): The gate charge of 195 nC at 10V influences switching speed and gate drive circuit requirements. Comparable gate charge values ensure compatibility with existing gate drive designs.

Package and Mounting: The TO-247-3 through-hole package is a critical mechanical parameter. All substitute parts must use identical or footprint-compatible packaging to ensure direct board-level replacement without layout modifications.

Operating Temperature Range: The -55°C to 150°C (TJ) operating range must be maintained or exceeded by substitute parts to ensure reliability across the full application temperature envelope.

Compliance Standards: RoHS3 compliance and REACH unaffected status are mandatory for regulatory and supply chain continuity.

Parameter Comparison

Engineering Selection Recommendations

STW13NK100Z (Primary Substitute)

The STW13NK100Z from STMicroelectronics is the primary substitute for the IXTH14N100. This device maintains the 1000 V voltage rating and provides 13 A continuous drain current, which closely matches the original 14 A specification. The power dissipation rating of 350 W (Tc) is within 3% of the original 360 W rating, ensuring thermal compatibility. The on-state resistance of 700 mOhm at 6.5A, 10V is lower than the original 820 mOhm, resulting in improved efficiency and reduced conduction losses. The STW13NK100Z is manufactured by STMicroelectronics, an active supplier with established supply chain continuity. The device is ROHS3 compliant and REACH unaffected, meeting all regulatory requirements. The TO-247-3 package provides direct mechanical compatibility without board redesign.

STW11NK100Z (Secondary Substitute)

The STW11NK100Z from STMicroelectronics is a secondary substitute option when current capacity reduction is acceptable. This device maintains the 1000 V voltage rating but provides 8.3 A continuous drain current, representing a 41% reduction from the original 14 A specification. The power dissipation rating of 230 W (Tc) is 36% lower than the original 360 W rating. The on-state resistance of 1.38 Ohm at 4.15A, 10V is significantly higher than the original specification. The STW11NK100Z is suitable only for applications where the reduced current and power ratings do not compromise circuit performance. This device is ROHS3 compliant, REACH unaffected, and uses the TO-247-3 package for mechanical compatibility. The lower gate charge of 162 nC may reduce gate drive circuit stress compared to the original design.

Both substitute parts are from active manufacturers with established product support and supply availability, addressing the obsolescence status of the IXTH14N100.

Frequently Asked Questions (FAQ)

Q: Can the STW13NK100Z directly replace the IXTH14N100 without circuit modifications?

A: The STW13NK100Z is mechanically and electrically compatible with the IXTH14N100 for direct board-level replacement. Both devices use the TO-247-3 package, maintain the 1000 V voltage rating, and operate across the same temperature range (-55°C to 150°C). The 13 A current rating of the STW13NK100Z is within 93% of the original 14 A specification, and the 350 W power dissipation rating is within 97% of the original 360 W rating. No circuit modifications are required for standard applications.

Q: What are the key differences between the STW13NK100Z and STW11NK100Z?

A: The primary differences are current capacity and power dissipation. The STW13NK100Z provides 13 A continuous drain current and 350 W power dissipation, closely matching the original IXTH14N100 specifications. The STW11NK100Z provides 8.3 A continuous drain current and 230 W power dissipation, representing significant reductions in both parameters. The STW11NK100Z has lower gate charge (162 nC versus 266 nC) and lower input capacitance (3500 pF versus 6000 pF), which may affect gate drive circuit design. Selection between these devices depends on the actual current and power requirements of the application.

Q: Are the substitute parts available in the same packaging as the original IXTH14N100?

A: Yes. Both the STW13NK100Z and STW11NK100Z use the TO-247-3 through-hole package, which is mechanically identical to the original IXTH14N100 TO-247-3 package. This ensures direct board-level compatibility without layout modifications or mechanical redesign.

Q: Do the substitute parts meet the same regulatory and compliance standards as the IXTH14N100?

A: Yes. Both the STW13NK100Z and STW11NK100Z are ROHS3 compliant and REACH unaffected, matching the compliance status of the original IXTH14N100. Both devices are suitable for applications requiring regulatory compliance in electronics manufacturing.

Q: How do the on-state resistance values compare between the original and substitute parts?

A: The IXTH14N100 has an on-state resistance of 820 mOhm at 500 mA, 10V. The STW13NK100Z has 700 mOhm at 6.5A, 10V, representing a lower resistance and improved efficiency. The STW11NK100Z has 1.38 Ohm at 4.15A, 10V, representing significantly higher resistance and increased conduction losses. The STW13NK100Z is the preferred substitute from a conduction loss perspective.

Q: What is the impact of gate charge differences on gate drive circuit design?

A: The IXTH14N100 has a gate charge of 195 nC at 10V. The STW13NK100Z has 266 nC, representing a 36% increase, which may require slightly higher gate drive current or longer switching times. The STW11NK100Z has 162 nC, representing a 17% decrease, which may reduce gate drive circuit stress. For most applications using standard gate drive circuits, these differences are within acceptable operating margins and do not require circuit redesign.

Q: Can the STW11NK100Z be used in applications requiring the full 14 A current rating of the IXTH14N100?

A: No. The STW11NK100Z provides only 8.3 A continuous drain current, which is insufficient for applications requiring the full 14 A capability of the original IXTH14N100. Use of the STW11NK100Z in such applications would result in device thermal stress and potential failure. The STW13NK100Z is the appropriate substitute for applications requiring current capacity close to the original 14 A specification.