IXTH13N80 Equivalent & Substitute Parts

Part Overview

The IXTH13N80 is an N-Channel 800V 13A MOSFET manufactured by IXYS in the MegaMOS™ series, housed in a TO-247 package. This device is rated for 300W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently in Last Time Buy status, indicating that production has been discontinued and existing inventory represents the final availability from the manufacturer. Identifying equivalent and substitute parts is necessary to ensure design continuity, support long-term production requirements, and maintain system reliability when original stock becomes unavailable.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	13	A
Power Dissipation (Max)	300	W
Rds On (Max) @ 500mA, 10V	800	mOhm
Gate Charge (Qg) @ 10V	170	nC
Input Capacitance (Ciss) @ 25V	4500	pF
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IXTH13N80 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): Must equal 800V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package Type: Must be through-hole TO-247 or compatible variant
Operating Temperature Range: Must support -55°C to 150°C minimum

Performance Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 13A at 25°C
Power Dissipation: Substitute must support thermal requirements of the application
Rds On: Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed

Substitutes are grouped based on their ability to meet the voltage and current specifications while maintaining electrical and thermal performance within acceptable application margins. Parts with lower gate charge and input capacitance offer improved switching characteristics. Parts with lower Rds On values provide reduced conduction losses.

Parameter Comparison

Parameter	IXTH13N80	IXFH12N80P	FQAF13N80	STW10NK80Z	STW12NK80Z	STW13N80K5
Manufacturer	IXYS	IXYS	onsemi	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	800	800	800	800	800	800
Id @ 25°C (A)	13	12	8	9	10.5	12
Power Dissipation (W)	300	360	120	160	190	190
Rds On (mOhm)	800	850	750	900	750	450
Gate Charge (nC)	170	51	88	72	87	29
Input Capacitance (pF)	4500	2800	3500	2180	2620	870
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247	TO-247AD	TO-3PF	TO-247-3	TO-247-3	TO-247-3
Product Status	Last Time Buy	Active	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

STW13N80K5 (STMicroelectronics) is the closest functional equivalent. It matches the 800V voltage rating and 12A continuous drain current specification. The STW13N80K5 offers superior electrical characteristics with significantly lower gate charge (29 nC versus 170 nC) and input capacitance (870 pF versus 4500 pF), resulting in reduced switching losses and improved efficiency. Power dissipation rating of 190W is lower than the original part but remains suitable for most applications. The device is in Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

STW12NK80Z (STMicroelectronics) provides an alternative with 10.5A continuous drain current and 800V voltage rating. Gate charge of 87 nC and input capacitance of 2620 pF represent moderate improvements over the original part. Power dissipation of 190W and Rds On of 750 mOhm support thermal and conduction performance. This device is in Active status with full compliance certifications.

IXFH12N80P (IXYS) maintains manufacturer continuity within the IXYS product line. It delivers 12A continuous drain current at 800V with improved power dissipation (360W) and lower gate charge (51 nC). The TO-247AD package is mechanically compatible with TO-247 footprints. Product status is Active with full RoHS3 compliance.

Secondary Substitutes (Limited Applicability):

STW10NK80Z (STMicroelectronics) provides 9A continuous drain current at 800V. This part is suitable only for applications where the 13A specification can be reduced to 9A without performance degradation. Gate charge of 72 nC and input capacitance of 2180 pF offer switching improvements. Product status is Active.

FQAF13N80 (onsemi) is not recommended for new designs. Although it matches the 13A current rating, the part is in Obsolete status, limiting future availability. Power dissipation of 120W is significantly lower than the original specification, restricting thermal capability. The TO-3PF package differs from the standard TO-247 footprint, requiring board redesign.

Compliance and Regulatory Status:

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status, matching the original part's regulatory posture. All devices operate across the required -55°C to 150°C temperature range. Moisture sensitivity level remains at MSL 1 (Unlimited) for all active substitutes, ensuring consistent handling and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can the STW13N80K5 directly replace the IXTH13N80 without circuit modifications?

A: The STW13N80K5 is electrically compatible for direct substitution in most applications. Both devices share identical 800V voltage rating, similar 12A/13A current ratings, and compatible TO-247-3 packages. The lower gate charge (29 nC versus 170 nC) and input capacitance (870 pF versus 4500 pF) of the STW13N80K5 may improve switching performance and reduce driver stress. Power dissipation of 190W is lower than the original 300W specification; verify that thermal requirements of your application do not exceed this limit. No circuit modifications are required for basic functionality.

Q: Why is the FQAF13N80 listed as a substitute if it is obsolete?

A: The FQAF13N80 is included in the substitute list based on the provided input data, which identified it as a cross-reference. However, its Obsolete product status makes it unsuitable for new designs or long-term production. The part should be avoided unless existing inventory is available and application thermal requirements do not exceed 120W power dissipation. The TO-3PF package also requires board-level redesign compared to the standard TO-247 footprint.

Q: What is the difference between TO-247 and TO-247AD packages?

A: Both TO-247 and TO-247AD are through-hole packages with identical pin configurations and mechanical footprints. The TO-247AD variant used by the IXFH12N80P includes enhanced isolation and thermal characteristics. Devices in either package can be mounted on standard TO-247 PCB layouts without modification. Verify mounting hardware compatibility with your specific board design.

Q: How do gate charge and input capacitance affect circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET on or off. Lower gate charge reduces driver current requirements and switching losses. Input capacitance (Ciss) affects the speed at which the gate voltage rises, influencing switching frequency and efficiency. The STW13N80K5 exhibits significantly lower values for both parameters (29 nC and 870 pF) compared to the IXTH13N80 (170 nC and 4500 pF), resulting in faster switching transitions and reduced power dissipation in the gate driver circuit.

Q: Can I use STW10NK80Z if my application requires only 9A instead of 13A?

A: Yes, the STW10NK80Z is suitable for applications where the continuous drain current requirement is 9A or less at 25°C. The device maintains the 800V voltage rating and operates across the required temperature range. Gate charge of 72 nC and input capacitance of 2180 pF provide switching improvements over the original part. Verify that your application's peak current demands do not exceed the 9A specification and that thermal dissipation remains within the 160W power rating.

Q: What is the significance of RoHS3 compliance and REACH unaffected status?

A: RoHS3 compliance indicates that the device meets the Restriction of Hazardous Substances Directive, restricting lead, cadmium, mercury, and other hazardous materials. REACH unaffected status confirms that the part does not contain substances of very high concern requiring special authorization. All recommended substitutes maintain these certifications, ensuring regulatory compliance for applications in regulated markets and supporting environmental and safety standards.

Q: Why does the STW13N80K5 have lower power dissipation (190W) than the IXTH13N80 (300W) despite similar current ratings?

A: Power dissipation is determined by multiple factors including Rds On (on-state resistance), switching losses, and thermal design. The STW13N80K5 features significantly lower Rds On (450 mOhm versus 800 mOhm) and gate charge (29 nC versus 170 nC), resulting in reduced conduction and switching losses. The lower power dissipation rating reflects the device's improved efficiency rather than a limitation. For applications requiring the full 300W dissipation capability of the original part, verify that the STW13N80K5's 190W rating is sufficient for your thermal budget.

Q: Are there package considerations when switching from IXTH13N80 to STW13N80K5?

A: Both devices use TO-247-3 packages with identical pin configurations and mechanical footprints. No PCB layout modifications are required for direct substitution. Verify that your board design accommodates the standard TO-247 mounting hardware and thermal interface requirements. The STW13N80K5 maintains the same lead spacing and mounting hole pattern as the IXTH13N80.

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