IXTH13N110 Equivalent & Substitute Parts

Part Overview

The IXTH13N110 is an N-Channel 1100 V, 13 A MOSFET manufactured by IXYS in the MegaMOS™ series, housed in a TO-247 through-hole package. This device is rated for 360 W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1100	V
Continuous Drain Current (Id) @ 25°C	13	A
Rds On (Max) @ 500mA, 10V	920	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	195	nC
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXTH13N110 is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must maintain a Drain to Source Voltage (Vdss) rating equal to or greater than 1100 V to ensure safe operation in the original application circuit.

Current Handling Capability: The continuous drain current (Id) rating must be sufficient to support the application's current demands. Substitute parts with equal or higher current ratings are acceptable.

On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation. Substitute parts with comparable or lower Rds On characteristics are functionally compatible.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Substitute parts with similar or lower gate charge values maintain compatibility with existing gate drive circuits.

Package and Mounting: All substitute parts must use the TO-247 through-hole package to ensure mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: Substitute parts must support the full operating temperature range of -55°C to 150°C.

Parameter Comparison

Parameter	IXTH13N110	IXFH16N120P	STW12N120K5	Unit
Manufacturer	IXYS	IXYS	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1100	1200	1200	V
Continuous Drain Current (Id) @ 25°C	13	16	12	A
Rds On (Max) @ 10V	920 @ 500mA	950 @ 8A	690 @ 6A	mOhm
Gate Threshold Voltage (Vgs(th)) (Max)	4.5 @ 250µA	6.5 @ 1mA	5 @ 100µA	V
Gate Charge (Qg) @ 10V	195	120	44.2	nC
Vgs (Max)	±20	±30	±30	V
Input Capacitance (Ciss) @ 25V	5650	6900	1370	pF
Power Dissipation (Max)	360	660	250	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

IXFH16N120P (IXYS HiPerFET™ Series)

The IXFH16N120P is an active product offering higher voltage (1200 V) and current (16 A) ratings compared to the IXTH13N110. This part provides enhanced performance headroom with 660 W maximum power dissipation. The IXFH16N120P is RoHS3 compliant and REACH unaffected, meeting current regulatory requirements. Gate charge is reduced to 120 nC, enabling faster switching characteristics. This substitute is suitable for applications requiring higher performance margins and modern compliance certifications.

STW12N120K5 (STMicroelectronics MDmesh™ K5 Series)

The STW12N120K5 is an active product from STMicroelectronics rated for 1200 V and 12 A continuous drain current. This part features significantly lower on-state resistance (690 mOhm) and substantially reduced gate charge (44.2 nC), resulting in improved efficiency and faster switching performance. Input capacitance is notably lower at 1370 pF. The STW12N120K5 is RoHS3 compliant and REACH unaffected. This substitute is optimal for applications prioritizing efficiency and switching speed, though power dissipation capability is lower at 250 W.

Both substitute parts maintain TO-247-3 package compatibility, support the full -55°C to 150°C operating temperature range, and are currently in active production status, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the IXFH16N120P directly replace the IXTH13N110 in existing designs?

A: The IXFH16N120P is mechanically and electrically compatible with the IXTH13N110 due to identical TO-247-3 packaging and through-hole mounting. The higher voltage and current ratings provide design margin. However, the increased gate charge (120 nC vs. 195 nC) may require gate driver circuit evaluation to confirm adequate drive capability.

Q: What are the advantages of the STW12N120K5 over the IXFH16N120P?

A: The STW12N120K5 offers significantly lower on-state resistance (690 mOhm vs. 950 mOhm) and substantially reduced gate charge (44.2 nC vs. 120 nC). These characteristics result in lower conduction losses and faster switching performance. Input capacitance is also considerably lower (1370 pF vs. 6900 pF), reducing gate driver stress. The trade-off is lower maximum power dissipation (250 W vs. 660 W).

Q: Are there current rating differences between the IXTH13N110 and its substitutes?

A: Yes. The IXTH13N110 is rated for 13 A continuous drain current. The IXFH16N120P supports 16 A, while the STW12N120K5 supports 12 A. For applications requiring the full 13 A rating, the IXFH16N120P provides additional margin. The STW12N120K5 operates at the lower boundary and is suitable only if the application current does not exceed 12 A.

Q: Do the substitute parts require gate driver modifications?

A: Gate charge differences may necessitate gate driver evaluation. The IXTH13N110 has 195 nC gate charge, while the IXFH16N120P has 120 nC and the STW12N120K5 has 44.2 nC. Lower gate charge values reduce driver current requirements but may require timing adjustments in existing circuits. Consult gate driver datasheets to confirm compatibility.

Q: What is the voltage rating difference, and does it affect circuit design?

A: The IXTH13N110 is rated for 1100 V Vdss, while both substitutes are rated for 1200 V. The higher voltage rating in substitute parts provides additional safety margin and is backward compatible with 1100 V applications. No circuit modifications are required due to this difference.

Q: Are both substitute parts RoHS and REACH compliant?

A: Yes. Both the IXFH16N120P and STW12N120K5 are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards. The IXTH13N110, being an obsolete part, does not carry these certifications.

Q: Which substitute part should be selected for high-efficiency applications?

A: The STW12N120K5 is optimal for efficiency-focused designs due to its lowest on-state resistance (690 mOhm) and minimal gate charge (44.2 nC). These characteristics minimize conduction and switching losses. Selection should confirm that the 12 A current rating is sufficient for the application.

Q: Can both substitutes be used interchangeably in the same design?

A: Both substitutes are mechanically compatible with the IXTH13N110 and each other due to identical TO-247-3 packaging. However, electrical characteristics differ significantly. Gate charge, on-state resistance, and power dissipation ratings vary, requiring circuit-level evaluation to determine which substitute best matches application requirements.

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