IXTH12N120 N-Channel 1200V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH12N120 is an N-Channel 1200V 12A MOSFET manufactured by IXYS in a Through Hole TO-247 package. This device is rated for 500W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for ongoing system support and new design implementations.

Substitute parts are necessary to maintain design continuity, ensure component availability, and support legacy system maintenance where the original IXTH12N120 is no longer in production.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1200	V
Continuous Drain Current (Id) @ 25°C	12	A
On-State Resistance (Rds On) @ 6A, 10V	1.4	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	95	nC
Input Capacitance (Ciss) @ 25V	3400	pF
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH12N120 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 1200V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Package/Case: TO-247-3 (exact match required)
Mounting Type: Through Hole (exact match required)
Operating Temperature Range: -55°C to 150°C (exact match required)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Equal to or greater than 12A
On-State Resistance (Rds On): Equal to or less than 1.4Ω (lower is acceptable)
Power Dissipation: Equal to or greater than 500W
Gate Threshold Voltage (Vgs(th)): Within ±30V gate voltage specification
Input Capacitance (Ciss): Acceptable within circuit design constraints

Substitute parts meeting all primary criteria and maintaining or exceeding secondary performance parameters are classified as direct equivalents or functional substitutes.

Parameter Comparison

Parameter	IXTH12N120	IXFH12N120P	APT1201R4BFLLG	APT14M120B	APT1204R7BFLLG
Manufacturer	IXYS	IXYS	Microchip Technology	Microchip Technology	Microchip Technology
Vdss (V)	1200	1200	1200	1200	1200
Id @ 25°C (A)	12	12	9	14	3.5
Rds On (Ω)	1.4 @ 6A, 10V	1.35 @ 500mA, 10V	1.5 @ 4.5A, 10V	1.2 @ 7A, 10V	4.7 @ 1.75A, 10V
Vgs(th) (V)	5 @ 250µA	6.5 @ 1mA	5 @ 1mA	5 @ 1mA	5 @ 1mA
Qg @ 10V (nC)	95	103	75	145	31
Ciss @ 25V (pF)	3400	5400	2030	4765	715
Power Dissipation (W)	500	543	300	625	135
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH12N120P (IXYS)

The IXFH12N120P is the primary equivalent substitute for the IXTH12N120. Both devices are manufactured by IXYS and share identical voltage and current ratings (1200V, 12A). The IXFH12N120P is currently in active production status, ensuring long-term availability. This part features improved on-state resistance (1.35Ω versus 1.4Ω) and higher power dissipation capability (543W versus 500W). The IXFH12N120P is ROHS3 compliant and carries the same REACH unaffected status as the original part. This substitute is recommended for direct replacement in existing designs.

APT14M120B (Microchip Technology)

The APT14M120B is a functional substitute offering superior current handling (14A versus 12A) and power dissipation (625W versus 500W) while maintaining the 1200V voltage rating. This part features lower on-state resistance (1.2Ω versus 1.4Ω), providing improved efficiency. The APT14M120B is in active production and ROHS3 compliant. This substitute is suitable for applications requiring higher current capacity or improved thermal performance.

APT1201R4BFLLG (Microchip Technology)

The APT1201R4BFLLG is a functional substitute with reduced current rating (9A versus 12A) and lower power dissipation (300W versus 500W). This part maintains the 1200V voltage specification and features comparable on-state resistance (1.5Ω versus 1.4Ω). The APT1201R4BFLLG is in active production and ROHS3 compliant. This substitute is applicable only to applications with current requirements not exceeding 9A.

APT1204R7BFLLG (Microchip Technology)

The APT1204R7BFLLG is a limited-use substitute with significantly reduced current rating (3.5A versus 12A) and power dissipation (135W versus 500W). While maintaining the 1200V voltage specification, the substantially higher on-state resistance (4.7Ω versus 1.4Ω) restricts this part to low-current applications only. This substitute is in active production and ROHS3 compliant. Use is limited to applications with current requirements not exceeding 3.5A.

Frequently Asked Questions (FAQ)

Q: Can the IXFH12N120P directly replace the IXTH12N120 in existing designs?

A: Yes. The IXFH12N120P is a direct equivalent substitute. Both parts share identical voltage (1200V) and current (12A) ratings, operate across the same temperature range (-55°C to 150°C), and use the same TO-247-3 package. The IXFH12N120P is in active production, addressing the obsolescence of the IXTH12N120.

Q: What is the primary difference between IXFH12N120P and APT14M120B?

A: Both are functional substitutes for the IXTH12N120 at the 1200V, 12A specification level. The IXFH12N120P is manufactured by IXYS (same manufacturer as the original part) and provides an exact current match. The APT14M120B is manufactured by Microchip Technology and offers higher current capacity (14A) and improved on-state resistance (1.2Ω), making it suitable for applications requiring enhanced performance margins.

Q: Can APT1201R4BFLLG or APT1204R7BFLLG be used as substitutes?

A: These parts are functional substitutes only for applications with reduced current requirements. APT1201R4BFLLG is limited to 9A maximum continuous drain current, and APT1204R7BFLLG is limited to 3.5A. Both maintain the 1200V voltage specification and TO-247-3 package compatibility. Use these substitutes only when circuit design confirms current requirements are within their rated limits.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (IXFH12N120P, APT1201R4BFLLG, APT14M120B, and APT1204R7BFLLG) are ROHS3 compliant. The original IXTH12N120 does not specify RoHS status. All substitutes carry REACH unaffected status.

Q: What is the significance of on-state resistance (Rds On) differences?

A: On-state resistance directly affects power dissipation and thermal performance. Lower Rds On values result in reduced power loss during operation. The IXFH12N120P (1.35Ω) and APT14M120B (1.2Ω) offer improved efficiency compared to the IXTH12N120 (1.4Ω). Higher Rds On values, such as in APT1204R7BFLLG (4.7Ω), increase power dissipation and are suitable only for low-current applications.

Q: Do all substitute parts use the same TO-247-3 package?

A: Yes. All substitute parts use the TO-247-3 package with Through Hole mounting, ensuring mechanical and thermal compatibility with existing PCB designs and heat sink assemblies.

Q: What is the impact of gate charge (Qg) differences on circuit design?

A: Gate charge affects gate drive circuit requirements and switching speed. The IXTH12N120 specifies 95 nC at 10V. Substitute parts range from 31 nC (APT1204R7BFLLG) to 145 nC (APT14M120B). Higher gate charge requires more drive current from the gate driver circuit. Verify gate driver capability when selecting substitutes with significantly different Qg values.

Q: What is the operating temperature range for all parts?

A: All parts, including the original IXTH12N120 and all substitutes, operate across the identical temperature range of -55°C to 150°C (junction temperature). This ensures thermal compatibility across the full product line.

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