IXTH12N100 N-Channel 1000V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTH12N100 is an N-Channel 1000V 12A MOSFET manufactured by IXYS in TO-247 package, part of the MegaMOS™ series. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement. The IXTH12N100 is designed for high-voltage switching applications requiring 1000V drain-to-source voltage rating with 12A continuous drain current capability at 25°C and 300W maximum power dissipation.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Current - Continuous Drain (Id) @ 25°C	12	A (Tc)
Rds On (Max) @ Id, Vgs	1.05	Ohm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs	170	nC @ 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	4000	pF @ 25V

Substitute Part Grouping Explanation

Substitution eligibility for the IXTH12N100 is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 1000V minimum
Current - Continuous Drain (Id) @ 25°C: 12A minimum
Package Type: TO-247-3 (Through Hole)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation (Max): Equal or higher ratings ensure thermal compatibility
Vgs (Max): ±20V or higher ensures gate drive compatibility

The substitute parts listed below meet or exceed the primary substitution criteria and are compatible with applications designed for the IXTH12N100.

Parameter Comparison

Parameter	IXTH12N100	APT10090BLLG	STW11NK100Z	STW13NK100Z	STW6N95K5	Unit
Manufacturer	IXYS	Microchip Technology	STMicroelectronics	STMicroelectronics	STMicroelectronics	—
Drain to Source Voltage (Vdss)	1000	1000	1000	1000	950	V
Current - Continuous Drain (Id) @ 25°C	12	12	8.3	13	9	A (Tc)
Rds On (Max) @ Id, Vgs	1.05 @ 6A, 10V	0.95 @ 6A, 10V	1.38 @ 4.15A, 10V	0.70 @ 6.5A, 10V	1.25 @ 3A, 10V	Ohm
Gate Charge (Qg) (Max) @ Vgs	170 @ 10V	71 @ 10V	162 @ 10V	266 @ 10V	13 @ 10V	nC
Power Dissipation (Max)	300	298	230	350	90	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	—
Vgs (Max)	±20	±30	±30	±30	±30	V
Input Capacitance (Ciss) (Max) @ Vds	4000 @ 25V	1969 @ 25V	3500 @ 25V	6000 @ 25V	450 @ 100V	pF
Product Status	Obsolete	Active	Active	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

APT10090BLLG (Microchip Technology)

The APT10090BLLG is an active product from Microchip Technology's POWER MOS 7® series. It matches the IXTH12N100 in Vdss (1000V) and Id (12A) specifications. The APT10090BLLG features lower Rds On (950mOhm vs. 1.05Ohm) and significantly lower gate charge (71nC vs. 170nC), resulting in reduced switching losses and improved efficiency. Power dissipation is comparable at 298W. Both devices are ROHS3 compliant and rated for -55°C to 150°C operation. The APT10090BLLG is suitable for direct replacement in applications where the IXTH12N100 is specified.

STW13NK100Z (STMicroelectronics)

The STW13NK100Z is an active product from STMicroelectronics' SuperMESH™ series. It meets the Vdss requirement (1000V) and exceeds the Id requirement (13A vs. 12A). The STW13NK100Z provides superior Rds On performance (700mOhm vs. 1.05Ohm) and higher power dissipation capability (350W vs. 300W). Gate charge is higher at 266nC. Both devices are ROHS3 compliant and rated for -55°C to 150°C operation. The STW13NK100Z is suitable for applications requiring higher current capacity or improved thermal performance.

STW11NK100Z (STMicroelectronics)

The STW11NK100Z is an active product from STMicroelectronics' SuperMESH™ series. It meets the Vdss requirement (1000V) but provides lower continuous drain current (8.3A vs. 12A). This device is not recommended as a direct substitute for applications requiring the full 12A rating. However, it may be considered for applications with reduced current requirements where the lower power dissipation (230W) is acceptable.

STW6N95K5 (STMicroelectronics)

The STW6N95K5 is an active product from STMicroelectronics' SuperMESH5™ series. It does not meet the primary Vdss requirement (950V vs. 1000V) and provides lower continuous drain current (9A vs. 12A). Additionally, power dissipation is significantly lower (90W vs. 300W). This device is not recommended as a substitute for the IXTH12N100.

Frequently Asked Questions (FAQ)

Q: Can the APT10090BLLG replace the IXTH12N100 in my existing design?

A: Yes. The APT10090BLLG meets all primary substitution criteria: 1000V Vdss, 12A continuous drain current, TO-247-3 package, and -55°C to 150°C operating temperature range. The APT10090BLLG is an active product with ROHS3 compliance, making it suitable for direct replacement. The lower gate charge and Rds On may improve circuit performance.

Q: Why is the STW6N95K5 listed if it does not meet the voltage requirement?

A: The STW6N95K5 is listed in the provided substitute list but does not meet the primary substitution criteria for the IXTH12N100. The 950V Vdss rating is below the required 1000V specification. This device is not recommended for applications designed for the IXTH12N100.

Q: What is the difference between the STW11NK100Z and STW13NK100Z?

A: Both devices are from STMicroelectronics' SuperMESH™ series with 1000V Vdss ratings. The STW11NK100Z provides 8.3A continuous drain current with 230W power dissipation, while the STW13NK100Z provides 13A continuous drain current with 350W power dissipation. The STW13NK100Z is more suitable for applications requiring the full 12A rating of the IXTH12N100.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (APT10090BLLG, STW11NK100Z, STW13NK100Z, and STW6N95K5) are ROHS3 compliant, matching the compliance status of the IXTH12N100.

Q: What is the significance of gate charge differences between these devices?

A: Gate charge (Qg) affects switching speed and driver power requirements. Lower gate charge reduces switching losses and simplifies gate drive circuit design. The APT10090BLLG has significantly lower gate charge (71nC vs. 170nC), while the STW13NK100Z has higher gate charge (266nC). Device selection should consider the gate drive circuit capabilities.

Q: Can I use the STW13NK100Z in a circuit designed for 12A if it provides 13A?

A: Yes. The STW13NK100Z provides higher current capability (13A vs. 12A) and is therefore suitable for applications designed for 12A operation. The device will operate within its rated specifications at 12A continuous drain current.

Q: Are there thermal considerations when substituting these devices?

A: Yes. Power dissipation ratings differ among substitute parts. The APT10090BLLG (298W) and STW13NK100Z (350W) provide comparable or superior thermal performance to the IXTH12N100 (300W). The STW11NK100Z (230W) and STW6N95K5 (90W) have lower power dissipation ratings and may require thermal design review for high-power applications.

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