IXTH10P50 Equivalent & Substitute Parts

Part Overview

The IXTH10P50 is a P-Channel 500V 10A power MOSFET in TO-247 through-hole packaging manufactured by IXYS. This device is rated for 300W continuous power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXTH10P50
IXYSIn Stock: 1215IXTH10P50 Datasheet
IXTH10P50
Current Part
IXTH20P50P
IXYSIn Stock: 1699IXTH20P50P Datasheet
IXTH20P50P
Direct
IXFH16N50P
IXYSIn Stock: 1718IXFH16N50P Datasheet
IXFH16N50P
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 10 A
On-Resistance (Rds On) @ 5A, 10V 900 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 5 V
Power Dissipation (Max) 300 W
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package TO-247-3

Substitute Part Grouping Explanation

Substitution of the IXTH10P50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): Must equal or exceed 500V
  • FET Channel Type: Must be P-Channel to maintain circuit polarity and gate drive compatibility
  • Continuous Drain Current (Id): Must meet or exceed 10A at 25°C
  • Power Dissipation: Must support thermal requirements of the application
  • Mounting Type: Through-hole configuration for PCB compatibility
  • Package Type: TO-247 or equivalent form factor for mechanical fit

Substitute Part Categories:

Direct Equivalent (Same Channel Type): The IXTH20P50P is a P-Channel 500V MOSFET with enhanced current rating (20A) and improved on-resistance characteristics. This part maintains identical voltage rating, channel type, and package configuration while providing superior performance margins.

Alternative Channel Type (N-Channel Consideration): The IXFH16N50P is an N-Channel 500V MOSFET. This part operates at a different channel polarity and requires circuit topology modification. It is listed as a manufacturer-recommended alternative but demands gate drive signal inversion and complementary circuit redesign.

Parameter Comparison

Parameter IXTH10P50 IXTH20P50P IXFH16N50P Unit
FET Type P-Channel P-Channel N-Channel
Drain to Source Voltage (Vdss) 500 500 500 V
Continuous Drain Current (Id) @ 25°C 10 20 16 A
Drive Voltage (Max Rds On) 10 10 10 V
On-Resistance (Rds On) @ Rated Conditions 900 @ 5A, 10V 450 @ 10A, 10V 400 @ 8A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ Specified Id 5 @ 250µA 4 @ 250µA 5.5 @ 2.5mA V
Gate Charge (Qg) @ 10V 160 103 43 nC
Input Capacitance (Ciss) @ 25V 4700 5120 2250 pF
Power Dissipation (Max) 300 460 300 W
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C
Mounting Type Through Hole Through Hole Through Hole
Package TO-247-3 TO-247-3 TO-247-3
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Recommended Primary Path):

The IXTH20P50P is the preferred substitute for the IXTH10P50. Both devices are P-Channel MOSFETs with identical 500V voltage rating and TO-247-3 package configuration. The IXTH20P50P is currently in active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1). The higher current rating (20A versus 10A) and improved on-resistance (450mOhm versus 900mOhm) provide enhanced performance margins without requiring circuit topology changes. Gate drive signals and control logic remain compatible.

For Alternative Channel Configuration:

The IXFH16N50P is an N-Channel alternative that maintains the 500V voltage rating and TO-247-3 package. This part is active and ROHS3 compliant. Selection of this device requires circuit redesign to accommodate N-Channel operation, including gate drive signal inversion and complementary control logic modification. The lower gate charge (43nC versus 160nC) and reduced input capacitance (2250pF versus 4700pF) offer switching speed advantages in redesigned topologies.

Compliance and Availability:

All substitute parts listed are ROHS3 compliant and REACH unaffected. The IXTH20P50P and IXFH16N50P are both active products with confirmed inventory availability, ensuring long-term supply continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXTH20P50P be used as a direct drop-in replacement for the IXTH10P50?

A: Yes. Both devices are P-Channel MOSFETs with 500V Vdss rating and TO-247-3 package configuration. The IXTH20P50P has higher current and power ratings, making it suitable for applications requiring the IXTH10P50 specifications. No circuit modifications are required.

Q: What is the primary difference between the IXTH20P50P and IXFH16N50P?

A: The IXTH20P50P is P-Channel while the IXFH16N50P is N-Channel. This fundamental difference in channel polarity requires gate drive signal inversion and circuit topology modification if the IXFH16N50P is selected. The IXTH20P50P is the preferred substitute for direct replacement.

Q: Are all substitute parts available in the same package?

A: Yes. All listed substitutes use TO-247-3 through-hole packaging, ensuring mechanical compatibility with existing PCB layouts designed for the IXTH10P50.

Q: What compliance certifications apply to the substitute parts?

A: Both the IXTH20P50P and IXFH16N50P are ROHS3 compliant and REACH unaffected. These certifications match the original IXTH10P50 specifications.

Q: Why is the IXTH10P50 classified as obsolete?

A: The IXTH10P50 is no longer in active production. The IXTH20P50P serves as the active replacement in the IXYS product line, offering improved electrical performance while maintaining voltage and package compatibility.

Q: Can the on-resistance difference between IXTH10P50 (900mOhm) and IXTH20P50P (450mOhm) affect circuit operation?

A: Lower on-resistance reduces conduction losses and heat generation. In applications where the IXTH10P50 was thermally marginal, the IXTH20P50P provides improved thermal performance. In applications with adequate thermal margin, the lower on-resistance has no negative effect.

Q: What is the significance of gate charge differences between these parts?

A: Gate charge affects switching speed and gate drive power requirements. The IXTH20P50P has lower gate charge (103nC versus 160nC), resulting in faster switching transitions and reduced gate drive circuit stress. The IXFH16N50P has significantly lower gate charge (43nC), enabling higher switching frequencies in redesigned topologies.

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