IXTF250N075T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTF250N075T is an N-Channel MOSFET manufactured by IXYS, rated for 75V drain-to-source voltage with 140A continuous drain current at 25°C. This device features the ISOPLUS i4-PAC™ through-hole package and operates across a temperature range of -55°C to 175°C. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	140	A
On-State Resistance (Rds On) @ 50A, 10V	4.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	200	nC
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	ISOPLUS i4-PAC™	Through Hole

Substitute Part Grouping Explanation

Substitution of the IXTF250N075T is determined by compatibility across the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel MOSFET technology
Package: ISOPLUS i4-PAC™ through-hole configuration
Operating Temperature Range: -55°C to 175°C minimum
Gate Drive Voltage: 10V maximum Rds On specification

Functional Equivalence Parameters:

Drain-to-Source Voltage (Vdss) rating must equal or exceed application requirements
Continuous Drain Current (Id) must meet or exceed circuit demands
On-State Resistance (Rds On) must support thermal and efficiency requirements
Gate Charge (Qg) and Input Capacitance (Ciss) affect switching performance

The IXTF200N10T qualifies as a substitute based on identical package type, matching FET technology, compatible temperature range, and equivalent gate drive specifications. Voltage and current ratings differ and must be evaluated against specific application requirements.

Parameter Comparison

Parameter	IXTF250N075T (Main)	IXTF200N10T (Substitute)	Unit
Manufacturer	IXYS	IXYS	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	75	100	V
Continuous Drain Current (Id) @ 25°C	140	90	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ 50A, 10V	4.4	7	mOhm
Vgs(th) (Max) @ 250µA	4	4.5	V
Gate Charge (Qg) @ 10V	200	152	nC
Vgs (Max)	±20	±30	V
Input Capacitance (Ciss) @ 25V	9900	9400	pF
Power Dissipation (Max)	200	156	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	i4-Pac™-5	i4-Pac™-5	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

IXTF200N10T as Primary Substitute:

The IXTF200N10T is an active product from IXYS with identical package configuration and compatible electrical specifications. This substitute is suitable for applications where the following conditions are met:

Circuit voltage requirements do not exceed 100V (the IXTF200N10T Vdss rating)
Circuit current requirements do not exceed 90A continuous drain current
Thermal design accommodates the 156W maximum power dissipation specification
Gate drive circuitry operates within ±30V maximum gate voltage specification

The IXTF200N10T exhibits higher on-state resistance (7 mOhm versus 4.4 mOhm), resulting in increased conduction losses. Applications sensitive to thermal performance or efficiency must account for this difference.

Product Status Consideration:

The IXTF250N075T is obsolete. The IXTF200N10T is active and supported by the manufacturer, ensuring continued availability and technical support for new designs and production runs.

Compliance Status:

The IXTF200N10T carries RoHS3 compliance certification, whereas the IXTF250N075T does not specify RoHS status. Both devices are REACH Unaffected and classified under ECCN EAR99.

Frequently Asked Questions (FAQ)

Q: Can the IXTF200N10T directly replace the IXTF250N075T in all applications?

A: Direct replacement is not universal. The IXTF200N10T has lower voltage (100V vs. 75V) and current (90A vs. 140A) ratings. Substitution is valid only when circuit requirements remain within the IXTF200N10T specifications. Applications requiring the full 140A rating or operating above 100V require alternative solutions.

Q: What is the impact of the higher on-state resistance in the IXTF200N10T?

A: The IXTF200N10T exhibits 7 mOhm on-state resistance compared to 4.4 mOhm in the IXTF250N075T. At equivalent current levels, this results in higher conduction losses and increased junction temperature. Thermal analysis is required to confirm acceptable operation within the -55°C to 175°C temperature range.

Q: Are the packages physically identical?

A: Both devices use the ISOPLUS i4-PAC™ through-hole package with i4-Pac™-5 case designation. Physical dimensions and pin configurations are identical, permitting direct PCB mounting without layout modifications.

Q: What is the significance of the gate charge difference?

A: The IXTF200N10T has lower gate charge (152 nC vs. 200 nC), resulting in faster switching transitions and reduced gate drive power requirements. This may improve overall circuit efficiency but does not affect substitution feasibility.

Q: Why is product status important for this substitution?

A: The IXTF250N075T is obsolete, meaning IXYS no longer manufactures or supports this device. The IXTF200N10T is active, ensuring continued availability, technical documentation, and manufacturer support for production and design activities.

Q: Are there moisture sensitivity or environmental compliance differences?

A: Both devices carry MSL 1 (Unlimited) moisture sensitivity rating. The IXTF200N10T includes RoHS3 compliance certification, providing additional environmental compliance assurance for regulated applications.

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