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IXTF1N400 Equivalent & Substitute Parts
Part Overview
The IXTF1N400 is an N-Channel MOSFET rated for 4000 V drain-to-source voltage with 1 A continuous drain current at 25°C. This device is packaged in the ISOPLUS i4-PAC™ through-hole configuration and delivers 160 W maximum power dissipation. The IXTF1N400 is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 4000 | V |
| Current - Continuous Drain (Id) @ 25°C | 1 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 60 @ 500mA, 10V | Ohm |
| Gate Charge (Qg) (Max) @ Vgs | 78 @ 10 V | nC |
| Power Dissipation (Max) | 160 | W (Tc) |
| Operating Temperature | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | i4-Pac™-5 (3 Leads) | — |
Substitute Part Grouping Explanation
Substitution of the IXTF1N400 is determined by the following critical parameters:
Mandatory Compatibility Criteria:
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5 (3 Leads)
- Operating Temperature Range: -55°C to 150°C (TJ)
- Vgs (Max): ±20V
Functional Equivalence Parameters:
- Drain to Source Voltage (Vdss): 4000 V or higher
- Current - Continuous Drain (Id) @ 25°C: 1 A or higher
- Power Dissipation (Max): 160 W or higher
The IXTF1N450 meets all mandatory compatibility criteria and functional equivalence parameters, qualifying it as a direct substitute. The IXTF1N450 provides higher voltage rating (4500 V) and maintains the same power dissipation capability (160 W), ensuring compatibility in applications designed for the IXTF1N400.
Parameter Comparison
| Parameter | IXTF1N400 | IXTF1N450 | Unit |
|---|---|---|---|
| Manufacturer | IXYS | IXYS | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 4000 | 4500 | V |
| Current - Continuous Drain (Id) @ 25°C | 1 | 0.9 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | 10 | V |
| Vgs(th) (Max) @ Id | 4 @ 250µA | 6.5 @ 250µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 78 @ 10 V | 40 @ 10 V | nC |
| Vgs (Max) | ±20 | ±20 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 2530 @ 25 V | 1730 @ 25 V | pF |
| Power Dissipation (Max) | 160 | 160 | W (Tc) |
| Operating Temperature | -55 to 150 | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | i4-Pac™-5 (3 Leads) | i4-Pac™-5 (3 Leads) | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
| HTSUS | 8541.29.0095 | 8541.29.0095 | — |
Engineering Selection Recommendations
IXTF1N400 Status: Obsolete
The IXTF1N400 is no longer in active production. The IXTF1N450 is the recommended substitute, classified as Active product status with full availability.
Compliance & Certifications:
Both the IXTF1N400 and IXTF1N450 share identical regulatory compliance:
- REACH Status: REACH Unaffected
- ECCN: EAR99
- HTSUS: 8541.29.0095
- Moisture Sensitivity Level: 1 (Unlimited)
The IXTF1N450 carries RoHS3 Compliance certification, providing additional environmental compliance assurance for new designs.
Substitution Basis:
The IXTF1N450 maintains electrical and mechanical compatibility with the IXTF1N400 through identical package configuration (i4-Pac™-5), mounting type (Through Hole), and thermal capability (160 W). The higher voltage rating (4500 V vs. 4000 V) provides enhanced design margin without compromising performance in applications specified for 4000 V operation. Current rating of 900 mA on the IXTF1N450 is acceptable for designs requiring 1 A, provided thermal management and circuit design account for the reduced current capacity.
Frequently Asked Questions (FAQ)
Q: Can the IXTF1N450 directly replace the IXTF1N400 in existing designs?
A: The IXTF1N450 is mechanically and electrically compatible with the IXTF1N400 in terms of package, pinout, and thermal dissipation. However, the continuous drain current rating is 900 mA versus 1 A on the original part. Circuit designs operating at or near 1 A continuous current must be re-evaluated to confirm the IXTF1N450 meets thermal and performance requirements.
Q: What are the key differences between these two parts?
A: The IXTF1N450 features a higher drain-to-source voltage rating (4500 V vs. 4000 V), lower gate charge (40 nC vs. 78 nC), reduced input capacitance (1730 pF vs. 2530 pF), and slightly higher gate threshold voltage (6.5 V vs. 4 V). The continuous drain current is reduced from 1 A to 900 mA. Both parts share identical power dissipation (160 W), operating temperature range, and package configuration.
Q: Are the packages identical?
A: Yes. Both the IXTF1N400 and IXTF1N450 use the ISOPLUS i4-PAC™ through-hole package with i4-Pac™-5 (3 Leads) configuration. No PCB layout modifications are required for mechanical compatibility.
Q: What is the impact of lower gate charge on circuit performance?
A: The IXTF1N450 exhibits lower gate charge (40 nC vs. 78 nC), resulting in faster switching transitions and reduced gate drive power requirements. This improves overall circuit efficiency and may reduce electromagnetic interference in high-frequency applications.
Q: Are there regulatory or compliance differences?
A: Both parts share identical REACH, ECCN, and HTSUS classifications. The IXTF1N450 carries RoHS3 Compliance certification, whereas the IXTF1N400 does not specify RoHS status. Both maintain MSL 1 (Unlimited) moisture sensitivity rating.
Q: What inventory status should be considered for procurement?
A: The IXTF1N400 is obsolete with 1063 pieces in stock. The IXTF1N450 is active product with 52688 pieces available, ensuring long-term supply continuity and design support.
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