IXTC75N10 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTC75N10 is an N-Channel MOSFET manufactured by IXYS in the MegaMOS™ series, rated for 100V drain-to-source voltage and 72A continuous drain current. This device features the ISOPLUS220™ package for through-hole mounting applications requiring high current handling and thermal performance up to 230W.

The IXTC75N10 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

IXTC75N10

IXYSIn Stock: 1688IXTC75N10 Datasheet

Current PartRFQ

IXTP75N10P

IXYSIn Stock: 13544IXTP75N10P Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTC75N10 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must maintain the 100V Vdss specification to ensure safe operation within the original circuit design envelope.

Current Rating: The substitute must support continuous drain current at or above 72A to meet or exceed the original device performance.

On-State Resistance: The substitute Rds On specification must not significantly exceed the original 20 mOhm value to prevent excessive power dissipation and thermal stress.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with lower gate charge and input capacitance values provide improved switching performance.

Power Dissipation: The substitute must support thermal performance adequate for the application, with higher power dissipation ratings providing additional thermal margin.

Operating Temperature Range: The substitute must cover the original operating temperature range of -55°C to 150°C.

Package Compatibility: The ISOPLUS220™ package is specific to the IXTC75N10. Substitutes in alternative through-hole packages (such as TO-220-3) require mechanical redesign of the PCB layout and thermal management approach.

Parameter Comparison

Engineering Selection Recommendations

IXTP75N10P as Primary Substitute:

The IXTP75N10P is an active product from IXYS and serves as the direct electrical equivalent to the obsolete IXTC75N10. Both devices share identical voltage ratings (100V Vdss) and comparable current ratings (75A versus 72A). The IXTP75N10P demonstrates superior electrical characteristics, including lower gate charge (74 nC versus 260 nC) and reduced input capacitance (2250 pF versus 4500 pF), resulting in faster switching performance and reduced gate drive power requirements.

The IXTP75N10P provides higher power dissipation capability (360W versus 230W) and an extended operating temperature range (-55°C to 175°C versus -55°C to 150°C), offering improved thermal margin and reliability in demanding applications.

Package Consideration:

The primary limitation for direct substitution is the package change from ISOPLUS220™ to TO-220-3. This requires PCB layout modification and thermal management redesign. The TO-220-3 package is a standard through-hole configuration with different lead spacing and thermal characteristics compared to the ISOPLUS220™ package.

Compliance Status:

Both the IXTC75N10 and IXTP75N10P maintain identical regulatory compliance: REACH Unaffected, EAR99 classification, and MSL 1 (Unlimited). The IXTP75N10P carries RoHS3 compliance, providing additional environmental certification for new designs.

Supply Availability:

The IXTP75N10P is available in active production with 13,500 pieces in stock, ensuring reliable supply chain continuity compared to the obsolete IXTC75N10 status.

Frequently Asked Questions (FAQ)

Q: Can the IXTP75N10P directly replace the IXTC75N10 without PCB modifications?

A: Electrical substitution is valid; however, mechanical substitution requires PCB layout changes. The IXTP75N10P uses the TO-220-3 package with different lead spacing and thermal pad configuration compared to the ISOPLUS220™ package of the IXTC75N10. PCB footprint redesign is necessary.

Q: What are the key electrical differences between these two devices?

A: Both devices maintain 100V Vdss and comparable current ratings. The IXTP75N10P offers superior switching characteristics with 71% lower gate charge (74 nC versus 260 nC) and 50% lower input capacitance (2250 pF versus 4500 pF). The IXTP75N10P also provides 56% higher power dissipation capability (360W versus 230W).

Q: Does the IXTP75N10P require different gate drive circuitry?

A: The lower gate charge of the IXTP75N10P reduces gate drive power requirements compared to the IXTC75N10. Existing gate drive circuits designed for the IXTC75N10 will function with the IXTP75N10P; however, optimization for the lower gate charge may improve switching efficiency.

Q: Are there thermal management differences between the ISOPLUS220™ and TO-220-3 packages?

A: Yes. The ISOPLUS220™ package provides a larger thermal pad and different thermal resistance characteristics compared to the TO-220-3 package. Thermal analysis and heatsink redesign are required when transitioning between these packages.

Q: What is the operating temperature advantage of the IXTP75N10P?

A: The IXTP75N10P extends the maximum junction temperature from 150°C to 175°C, providing an additional 25°C thermal margin. This allows operation in higher ambient temperature environments or with reduced heatsink requirements.

Q: Is the IXTP75N10P RoHS compliant?

A: Yes. The IXTP75N10P is RoHS3 compliant, meeting current environmental regulations for new product designs and manufacturing.

Q: What is the Rds On specification difference, and does it affect circuit performance?

A: The IXTC75N10 specifies 20 mOhm Rds On at 37.5A, 10V, while the IXTP75N10P specifies 25 mOhm at 500mA, 10V. The IXTP75N10P's higher Rds On value results in slightly increased on-state power dissipation; however, the superior power dissipation rating (360W versus 230W) provides adequate thermal margin for most applications.

Q: Can the IXTP75N10P handle the same current levels as the IXTC75N10?

A: Yes. The IXTP75N10P is rated for 75A continuous drain current, exceeding the IXTC75N10 specification of 72A. Current handling capability is maintained or improved with the substitute device.