IXTC200N10T Equivalent & Substitute Parts

Part Overview

The IXTC200N10T is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 101A continuous drain current at 25°C. This device features the ISOPLUS220™ package and is built on the TrenchMV™ technology platform. The part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	101	A
On-State Resistance (Rds On Max) @ 50A, 10V	6.3	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4.5	V
Power Dissipation (Max)	160	W
Operating Temperature Range	-55 to 175	°C
Package Type	ISOPLUS220™	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IXTC200N10T is based on electrical and mechanical compatibility within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility Requirements:

Drain-to-source voltage rating (Vdss) of 100V or greater
Continuous drain current (Id) rating of 101A or greater at 25°C
Gate threshold voltage (Vgs(th)) within acceptable operating range
Operating temperature range spanning -55°C to 175°C

Mechanical Compatibility Requirements:

Through-hole mounting configuration
Package footprint compatibility with application requirements

The STP120NF10 meets these criteria with a 100V Vdss rating, 110A continuous drain current, and identical operating temperature range. Both devices utilize through-hole mounting and are rated for the same voltage class.

Parameter Comparison

Parameter	IXTC200N10T	STP120NF10	Unit
Manufacturer	IXYS	STMicroelectronics
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	101	110	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Vgs 10V	6.3 @ 50A	10.5 @ 60A	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4.5	4.0	V
Gate Charge (Qg Max) @ 10V	152	233	nC
Power Dissipation (Max)	160	312	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Mounting Type	Through Hole	Through Hole
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Product Status	Obsolete	Active

Engineering Selection Recommendations

The STP120NF10 serves as a functional equivalent for the obsolete IXTC200N10T based on matching electrical specifications and through-hole mounting configuration. Both devices share identical voltage ratings (100V Vdss) and comparable current ratings (101A versus 110A), with operating temperature ranges spanning -55°C to 175°C.

The STP120NF10 is classified as Active product status, ensuring ongoing availability and supply chain continuity. The device is ROHS3 compliant, whereas the IXTC200N10T carries REACH Unaffected status. Both parts are rated ECCN EAR99 and share the same HTSUS classification (8541.29.0095).

Electrical performance differences exist in on-state resistance and gate charge characteristics. The IXTC200N10T exhibits lower Rds On (6.3 mOhm @ 50A, 10V) compared to the STP120NF10 (10.5 mOhm @ 60A, 10V). The STP120NF10 demonstrates higher power dissipation capability (312W versus 160W), providing thermal margin in applications with elevated power requirements.

Package differences between ISOPLUS220™ and TO-220-3 require mechanical evaluation for PCB layout compatibility and thermal management considerations.

Frequently Asked Questions (FAQ)

Q: Can the STP120NF10 directly replace the IXTC200N10T in existing designs?

A: Electrical substitution is supported based on matching Vdss (100V), comparable Id ratings (110A versus 101A), and identical operating temperature range (-55°C to 175°C). Package differences between ISOPLUS220™ and TO-220-3 require mechanical verification for PCB footprint compatibility and thermal interface requirements.

Q: What are the key electrical differences between these devices?

A: The STP120NF10 provides higher continuous drain current (110A versus 101A) and greater power dissipation capability (312W versus 160W). The IXTC200N10T exhibits lower on-state resistance (6.3 mOhm @ 50A, 10V versus 10.5 mOhm @ 60A, 10V). Gate charge is higher in the STP120NF10 (233 nC versus 152 nC @ 10V), affecting switching speed characteristics.

Q: Are there compliance or regulatory differences?

A: The STP120NF10 is ROHS3 compliant and currently Active in product status. The IXTC200N10T is classified as Obsolete with REACH Unaffected status. Both devices share EAR99 ECCN classification and identical HTSUS codes (8541.29.0095).

Q: What package considerations apply to substitution?

A: The IXTC200N10T uses ISOPLUS220™ through-hole packaging, while the STP120NF10 uses TO-220-3 through-hole packaging. Physical dimensions, lead spacing, and thermal interface characteristics differ between packages. PCB layout modifications may be required for mechanical compatibility.

Q: How do gate charge differences affect circuit performance?

A: The STP120NF10 exhibits higher gate charge (233 nC versus 152 nC @ 10V), requiring greater gate drive energy for switching transitions. This impacts gate driver selection and switching frequency performance in high-speed applications.

Q: What is the moisture sensitivity level for both devices?

A: Both the IXTC200N10T and STP120NF10 are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage and handling.

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