IXTC13N50 Equivalent & Substitute Parts

Part Overview

The IXTC13N50 is an N-Channel 500V 12A MOSFET manufactured by IXYS in the ISOPLUS220™ package. This device is rated for 140W power dissipation and operates across a temperature range of -55°C to 150°C. The part is classified as obsolete, making equivalent and substitute components necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value
FET Type	N-Channel
Drain to Source Voltage (Vdss)	500 V
Continuous Drain Current (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On)	10V
Rds On (Max) @ Id, Vgs	400mOhm @ 6.5A, 10V
Gate Threshold Voltage Vgs(th) (Max)	4V @ 2.5mA
Gate Charge (Qg) (Max)	120 nC @ 10V
Power Dissipation (Max)	140W (Tc)
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package	ISOPLUS220™

Substitute Part Grouping Explanation

Substitution of the IXTC13N50 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): 500V minimum
Continuous Drain Current (Id): 12A or greater at 25°C
Gate Drive Voltage: 10V
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Compatibility Requirements:

Mounting Type: Through Hole
Package compatibility with circuit board layout

The substitute parts listed below meet or exceed the electrical specifications of the IXTC13N50 while maintaining through-hole mounting compatibility. Package differences (ISOPLUS220™ vs. TO-3PN vs. TO-220FP vs. TO-220) require physical board layout verification.

Parameter Comparison

Parameter	IXTC13N50	FQA13N50CF	STF14NM50N	STP12NM50
Manufacturer	IXYS	onsemi	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss	500V	500V	500V	500V
Id @ 25°C (Tc)	12A	15A	12A	12A
Drive Voltage	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	400mOhm @ 6.5A, 10V	480mOhm @ 7.5A, 10V	320mOhm @ 6A, 10V	350mOhm @ 6A, 10V
Vgs(th) (Max)	4V @ 2.5mA	4V @ 250µA	4V @ 100µA	5V @ 50µA
Gate Charge (Qg) (Max)	120 nC @ 10V	56 nC @ 10V	27 nC @ 10V	39 nC @ 10V
Power Dissipation (Max)	140W (Tc)	218W (Tc)	25W (Tc)	160W (Tc)
Operating Temperature	-55°C ~ 150°C	-55°C ~ 150°C	-55°C ~ 150°C	-65°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package	ISOPLUS220™	TO-3P-3, SC-65-3	TO-220-3 Full Pack	TO-220-3
Product Status	Obsolete	Obsolete	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STF14NM50N (STMicroelectronics) and STP12NM50 (STMicroelectronics) are the preferred substitutes for new designs and ongoing production. Both devices are classified as Active products with ROHS3 compliance, ensuring long-term availability and regulatory alignment.

STF14NM50N offers the lowest on-resistance (320mOhm) and gate charge (27 nC), resulting in improved switching efficiency and reduced thermal load. The TO-220FP package provides standard through-hole compatibility with most circuit board layouts. Power dissipation is rated at 25W, suitable for applications with moderate thermal requirements.

STP12NM50 provides the highest power dissipation rating (160W) among active substitutes, matching the thermal performance envelope of the IXTC13N50 (140W). The TO-220 package is widely supported in production environments. Operating temperature extends to -65°C, exceeding the IXTC13N50 specification.

FQA13N50CF (onsemi) meets all electrical specifications with 15A continuous drain current and 218W power dissipation. However, this device is classified as obsolete. The TO-3PN package differs significantly from ISOPLUS220™, requiring board layout redesign.

Package selection is critical. The ISOPLUS220™ package footprint differs from TO-220 and TO-3PN variants. Physical board layout compatibility must be verified before component substitution.

Frequently Asked Questions (FAQ)

Q: Can the STF14NM50N directly replace the IXTC13N50 without board modifications?

A: Electrical substitution is valid. However, the STF14NM50N uses a TO-220FP package while the IXTC13N50 uses ISOPLUS220™. Package footprints differ, requiring board layout verification and potential PCB modifications.

Q: What is the primary advantage of STP12NM50 over STF14NM50?

A: The STP12NM50 provides higher power dissipation (160W vs. 25W) and extended low-temperature operation (-65°C vs. -55°C). Selection depends on thermal requirements and operating environment specifications.

Q: Why is FQA13N50CF listed as a substitute if it is obsolete?

A: FQA13N50CF meets all electrical parameters and remains in inventory (9513 Pcs). Obsolete status indicates no new production; however, existing stock may support legacy system repairs or limited production runs.

Q: Are all substitute parts RoHS compliant?

A: STF14NM50N and STP12NM50 are ROHS3 compliant. FQA13N50CF compliance status is not specified in available documentation. Regulatory requirements must be confirmed for specific applications.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines switching speed and driver circuit requirements. STF14NM50N has the lowest gate charge (27 nC), reducing driver power consumption. IXTC13N50 requires 120 nC, a significant difference affecting circuit design.

Q: What thermal considerations apply when substituting packages?

A: Package thermal resistance varies significantly. ISOPLUS220™, TO-3PN, and TO-220 packages have different junction-to-case thermal characteristics. Thermal management design must account for package-specific heat dissipation paths and mounting configurations.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: No. Each substitute has distinct electrical characteristics (Rds On, gate charge, power dissipation). Circuit performance, switching frequency, and thermal behavior will differ. Design validation is required for each specific part selection.

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