IXTC110N25T Equivalent & Substitute Parts

Part Overview

The IXTC110N25T is an N-Channel MOSFET manufactured by IXYS, rated for 250V drain-to-source voltage and 50A continuous drain current. This device features the ISOPLUS220™ through-hole package and is designed for high-power switching applications requiring robust thermal performance at 180W maximum power dissipation. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements.

Substiute Parts

IXTC110N25T

IXYSIn Stock: 844IXTC110N25T Datasheet

Current PartRFQ

IXTP50N25T

IXYSIn Stock: 27505IXTP50N25T Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTC110N25T is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 250V
• Continuous Drain Current (Id): Must equal or exceed 50A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be within acceptable switching control range
• On-State Resistance (Rds On): Lower values indicate improved performance; higher values require thermal verification
• Operating Temperature Range: Must support -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Through-hole configuration required
• Package compatibility: Physical footprint and pin configuration must accommodate existing PCB layouts

The IXTP50N25T qualifies as a substitute based on matching electrical ratings (250V Vdss, 50A Id) and through-hole mounting configuration. However, the package transition from ISOPLUS220™ to TO-220-3 represents a mechanical change requiring PCB layout verification.

Parameter Comparison

Engineering Selection Recommendations

IXTC110N25T (Obsolete): The IXTC110N25T is classified as obsolete and should not be selected for new designs. Existing inventory of 779 pieces may support legacy production requirements only. This part remains compliant with REACH regulations and carries EAR99 export classification.

IXTP50N25T (Active Substitute): The IXTP50N25T is the recommended substitute for the IXTC110N25T. This part is actively manufactured and maintained by IXYS, ensuring long-term availability and supply chain stability. The IXTP50N25T meets all critical electrical requirements: 250V Vdss, 50A continuous drain current, and -55°C to 150°C operating temperature range. The part is RoHS3 compliant and carries identical REACH and ECCN classifications.

Key Differences Requiring Verification:

The IXTP50N25T incorporates Trench technology and features improved electrical characteristics compared to the IXTC110N25T. The substitute exhibits lower gate charge (78 nC versus 157 nC), reduced input capacitance (4000 pF versus 9400 pF), and higher maximum power dissipation (400W versus 180W). The on-state resistance specification differs due to measurement conditions (50 mOhm @ 25A, 10V versus 27 mOhm @ 55A, 10V), reflecting the improved thermal performance of the active device.

The package transition from ISOPLUS220™ to TO-220-3 requires PCB layout modification. Both packages are through-hole configurations with different physical footprints and pin arrangements. Thermal management characteristics differ; the TO-220-3 package provides superior heat dissipation capability due to its larger surface area and standardized mounting interface.

Frequently Asked Questions (FAQ)

Q: Can the IXTP50N25T directly replace the IXTC110N25T without PCB modifications?

A: No. While both devices are through-hole MOSFETs with identical electrical ratings (250V, 50A), the package transition from ISOPLUS220™ to TO-220-3 requires PCB layout changes. The pin configurations and physical footprints are different. PCB redesign is necessary for mechanical compatibility.

Q: What are the advantages of substituting to the IXTP50N25T?

A: The IXTP50N25T offers improved electrical performance through Trench technology, including reduced gate charge (78 nC versus 157 nC) and lower input capacitance (4000 pF versus 9400 pF). The active product status ensures ongoing manufacturing support and supply availability. Maximum power dissipation is doubled (400W versus 180W), providing superior thermal headroom. The part is RoHS3 compliant.

Q: Are there any electrical performance trade-offs when substituting to the IXTP50N25T?

A: The on-state resistance specifications are measured under different conditions and cannot be directly compared. The IXTP50N25T specification (50 mOhm @ 25A, 10V) reflects measurement at lower current than the IXTC110N25T (27 mOhm @ 55A, 10V). The gate threshold voltage is slightly higher (5V versus 4.5V), and maximum gate voltage rating is increased (±30V versus ±20V). These differences are within acceptable ranges for N-Channel MOSFET applications.

Q: What is the impact of the package change on thermal management?

A: The TO-220-3 package provides enhanced thermal performance compared to ISOPLUS220™. The larger surface area and standardized mounting interface of TO-220-3 facilitate improved heat dissipation. The IXTP50N25T maximum power dissipation rating of 400W reflects this thermal advantage. Existing thermal designs based on 180W dissipation will benefit from the increased thermal capacity of the substitute.

Q: Are both parts compliant with regulatory requirements?

A: Yes. Both the IXTC110N25T and IXTP50N25T are REACH Unaffected and carry EAR99 export classification. The IXTP50N25T additionally carries RoHS3 compliance certification. Both devices have Moisture Sensitivity Level 1 (Unlimited), indicating no moisture sensitivity constraints.

Q: What is the availability status of each part?

A: The IXTC110N25T is obsolete with 779 pieces in current inventory. The IXTP50N25T is actively manufactured with 27,400 pieces in stock, ensuring reliable long-term availability for production requirements.