IXTA8N50P N-Channel 500V 8A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA8N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 8A continuous drain current in a TO-263AA surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 150W at the case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	8	A
On-State Resistance (Rds On) @ 4A, 10V	800	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	5.5	V
Gate Charge (Qg) @ 10V	20	nC
Maximum Gate Voltage (Vgs)	±30	V
Input Capacitance (Ciss) @ 25V	1050	pF
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IXTA8N50P is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 8A at 25°C
Package Type: Must be TO-263-3 (D2PAK) or equivalent surface mount configuration
Operating Temperature Range: Must support -55°C to 150°C
Gate Voltage Rating (Vgs): Must support ±30V or greater

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance; values within 850mOhm are acceptable
Gate Charge (Qg): Lower values reduce switching losses; values up to 68nC are acceptable
Input Capacitance (Ciss): Values up to 1390pF are acceptable for most applications

Substitute parts are grouped into two categories:

Category 1: Direct Voltage Equivalents (500V Rating) Parts with 500V Vdss rating provide direct electrical equivalence. These include IRF840 series devices from Vishay Siliconix (IRF840ASPBF, IRF840ASTRLPBF, IRF840ASTRRPBF, IRF840LCSPBF, IRF840LCSTRRPBF, IRF840STRRPBF) and STB11NK50ZT4 from STMicroelectronics.

Category 2: Enhanced Voltage Rating (650V Rating) The IXTA8N65X2 from IXYS provides a higher voltage rating (650V) while maintaining identical current rating (8A) and package configuration. This part is suitable for applications requiring additional voltage margin.

Parameter Comparison

Parameter	IXTA8N50P	IXTA8N65X2	IRF840ASPBF	IRF840ASTRLPBF	IRF840ASTRRPBF	IRF840LCSPBF	IRF840LCSTRRPBF	IRF840STRRPBF	STB11NK50ZT4
Vdss (V)	500	650	500	500	500	500	500	500	500
Id @ 25°C (A)	8	8	8	8	8	8	8	8	10
Rds On @ 10V (mOhm)	800	500	850	850	850	850	850	850	520
Vgs(th) (V)	5.5	5	4	4	4	4	4	4	4.5
Qg @ 10V (nC)	20	12	38	38	38	39	39	63	68
Vgs Max (V)	±30	±30	±30	±30	±30	±30	±30	±20	±30
Ciss @ 25V (pF)	1050	800	1018	1018	1018	1100	1100	1300	1390
Power Dissipation (W)	150	150	125	125	125	125	125	125	125
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263AA	TO-263	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (500V, 8A Applications):

The IRF840 series from Vishay Siliconix provides the most direct electrical equivalence to the IXTA8N50P. All IRF840 variants maintain the 500V/8A rating and TO-263 (D2PAK) package configuration. These parts are in active production status with ROHS3 compliance certification, ensuring long-term availability and regulatory compliance.

Packaging Considerations:

IRF840ASPBF and IRF840LCSPBF: Supplied in tube packaging, suitable for lower-volume applications
IRF840ASTRLPBF, IRF840ASTRRPBF, IRF840LCSTRRPBF, and IRF840STRRPBF: Supplied in tape and reel format, optimized for high-volume automated assembly

For Enhanced Voltage Margin:

The IXTA8N65X2 from IXYS offers a 650V rating while maintaining the same 8A current rating and TO-263 package. This part is suitable for applications requiring additional voltage headroom. The IXTA8N65X2 features improved on-state resistance (500mOhm versus 800mOhm) and reduced gate charge (12nC versus 20nC), resulting in lower conduction and switching losses.

For Higher Current Capability:

The STB11NK50ZT4 from STMicroelectronics provides 10A continuous drain current at 500V, exceeding the IXTA8N50P specification. This part features superior on-state resistance (520mOhm) and is suitable for applications requiring current margin. The STB11NK50ZT4 is supplied in cut tape and Digi-Reel format.

Compliance and Availability:

All recommended substitute parts are in active production status with ROHS3 compliance. The IXTA8N50P is classified as obsolete; therefore, transition to an active substitute part is necessary for new designs and ongoing procurement.

Frequently Asked Questions (FAQ)

Q: Can the IRF840STRRPBF be used as a direct replacement for the IXTA8N50P?

A: Yes. The IRF840STRRPBF meets all critical electrical parameters: 500V Vdss, 8A continuous drain current, ±30V gate voltage rating (note: IRF840STRRPBF specifies ±20V maximum gate voltage, which is within the IXTA8N50P's ±30V specification), and identical TO-263 (D2PAK) package. Both devices operate across -55°C to 150°C. The IRF840STRRPBF is in active production with ROHS3 compliance.

Q: What is the advantage of using IXTA8N65X2 over the IRF840 series?

A: The IXTA8N65X2 provides three advantages: (1) higher drain-to-source voltage rating (650V versus 500V), providing additional voltage margin for transient protection; (2) lower on-state resistance (500mOhm versus 850mOhm), reducing conduction losses; (3) lower gate charge (12nC versus 38-39nC), reducing switching losses and gate drive requirements. The IXTA8N65X2 is manufactured by IXYS, the original manufacturer of the IXTA8N50P.

Q: Are there packaging differences between substitute parts?

A: Yes. All substitute parts use TO-263 (D2PAK) or equivalent surface mount packages, ensuring mechanical compatibility. However, packaging format differs: tube packaging (IRF840ASPBF, IRF840LCSPBF) is suitable for manual assembly and lower volumes; tape and reel format (IRF840ASTRLPBF, IRF840ASTRRPBF, IRF840LCSTRRPBF, IRF840STRRPBF) is optimized for automated pick-and-place assembly. The STB11NK50ZT4 is supplied in cut tape and Digi-Reel format.

Q: Does the STB11NK50ZT4 provide any performance advantage?

A: Yes. The STB11NK50ZT4 offers higher continuous drain current (10A versus 8A) and lower on-state resistance (520mOhm versus 800mOhm), resulting in reduced conduction losses. This part is suitable for applications requiring current margin or lower thermal dissipation. The higher current rating does not affect compatibility with 8A-rated circuits.

Q: What is the impact of different gate charge specifications?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTA8N50P specifies 20nC, while substitute parts range from 12nC (IXTA8N65X2) to 68nC (STB11NK50ZT4). Lower gate charge reduces switching losses and gate driver power consumption. Higher gate charge increases switching losses but does not affect DC operating characteristics. Gate driver circuits must be verified for compatibility with the selected part's gate charge specification.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts listed are ROHS3 compliant. The IXTA8N50P is classified as obsolete and does not carry ROHS3 certification. For new designs and applications requiring regulatory compliance, transition to an active substitute part is necessary.

Q: Can the IXTA8N50P be used interchangeably with IRF840STRRPBF in existing designs?

A: Yes, with one consideration: the IRF840STRRPBF specifies a maximum gate voltage of ±20V, while the IXTA8N50P specifies ±30V. If the circuit applies gate voltages exceeding ±20V, the IRF840STRRPBF is not suitable. For gate voltages within ±20V, the IRF840STRRPBF provides direct electrical and mechanical compatibility.

Q: What is the difference between IRF840LCSTRRPBF and IRF840ASTRRPBF?

A: Both parts are electrically identical 500V/8A MOSFETs in TO-263 (D2PAK) packages supplied in tape and reel format. The designation difference reflects internal Vishay product line categorization. Both are in active production status with ROHS3 compliance and are suitable for direct substitution of the IXTA8N50P.

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