IXTA6N50P N-Channel MOSFET 500V 6A Equivalent & Substitute Parts

Part Overview

The IXTA6N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 6A continuous drain current in a Surface Mount TO-263AA package. This device is part of the PolarHV™ series and is classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

IXTA6N50P

IXYSIn Stock: 813IXTA6N50P Datasheet

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IXTA8N65X2

IXYSIn Stock: 852IXTA8N65X2 Datasheet

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IRF730STRLPBF

Vishay SiliconixIn Stock: 851IRF730STRLPBF Datasheet

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STD6N52K3

STMicroelectronicsIn Stock: 50135STD6N52K3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTA6N50P is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel topology
• Drain to Source Voltage (Vdss): Equal to or greater than 500V
• Continuous Drain Current (Id): Equal to or greater than 6A at 25°C
• Mounting Type: Surface Mount
• Package Compatibility: TO-263 family (TO-263-3, D2PAK, TO-263AB)
• Gate Drive Voltage: 10V maximum Rds On specification
• Operating Temperature Range: Minimum -55°C to 150°C

Substitution Logic: Parts are grouped as equivalent or substitute based on their ability to meet or exceed the electrical performance of the IXTA6N50P while maintaining physical and thermal compatibility. Vdss rating may exceed 500V, and Id rating may exceed 6A, as these represent design margins. Rds On values must be comparable to ensure switching performance and thermal behavior remain within acceptable limits. Package type must be compatible with existing PCB layouts.

Parameter Comparison

Engineering Selection Recommendations

IXTA8N65X2 (IXYS): This part is the primary equivalent substitute for the IXTA6N50P. It exceeds the voltage rating (650V vs. 500V) and current rating (8A vs. 6A), providing design margin. The Rds On is superior at 0.5 Ohm, resulting in lower power dissipation and improved thermal performance. Gate charge is lower (12 nC vs. 14.6 nC), enabling faster switching. The part is Active status with ROHS3 compliance and maintains the same operating temperature range. Package compatibility is confirmed as TO-263. This substitute is suitable for direct replacement in applications where the higher voltage and current ratings do not create design conflicts.

IRF730STRLPBF (Vishay Siliconix): This part operates at a lower voltage rating (400V vs. 500V) and is therefore not suitable as a substitute for applications requiring the full 500V rating. However, it may be considered for applications where the circuit operates below 400V. The continuous drain current (5.5A) is slightly below the IXTA6N50P specification (6A). The Rds On is comparable (1.0 Ohm vs. 1.1 Ohm). Gate charge is significantly higher (38 nC vs. 14.6 nC), indicating slower switching characteristics. The part is Active status with ROHS3 compliance. Package compatibility is confirmed as TO-263 (D2PAK). This part is not recommended as a primary substitute due to voltage rating limitations.

STD6N52K3 (STMicroelectronics): This part meets the voltage requirement (525V vs. 500V) and provides adequate design margin. The continuous drain current (5A) is below the IXTA6N50P specification (6A), making it unsuitable for applications requiring the full 6A rating. The Rds On is slightly higher (1.2 Ohm vs. 1.1 Ohm). The part is Active status with ROHS3 compliance and maintains the same operating temperature range. Package type is DPAK, which differs from the TO-263AA of the original part; PCB layout compatibility must be verified. This part is not recommended as a primary substitute due to lower current rating and package incompatibility.

Frequently Asked Questions (FAQ)

Q: Can the IXTA8N65X2 be used as a direct replacement for the IXTA6N50P?

A: Yes. The IXTA8N65X2 meets or exceeds all critical electrical parameters of the IXTA6N50P. It has higher voltage (650V vs. 500V) and current (8A vs. 6A) ratings, lower Rds On (0.5 Ohm vs. 1.1 Ohm), and lower gate charge (12 nC vs. 14.6 nC). Both parts use the TO-263 package family and share the same operating temperature range (-55°C to 150°C). The IXTA8N65X2 is Active status with ROHS3 compliance, addressing the obsolescence of the IXTA6N50P.

Q: Why is the IRF730STRLPBF not recommended as a substitute?

A: The IRF730STRLPBF has a maximum Vdss rating of 400V, which is below the IXTA6N50P specification of 500V. Applications requiring the full 500V rating cannot use this part. Additionally, the continuous drain current (5.5A) is below the 6A requirement. The significantly higher gate charge (38 nC vs. 14.6 nC) results in slower switching performance. This part is suitable only for applications operating below 400V with current requirements below 5.5A.

Q: What is the package compatibility between these parts?

A: The IXTA6N50P uses TO-263AA packaging. The IXTA8N65X2 uses TO-263 packaging, which is compatible with the TO-263 family. The IRF730STRLPBF uses TO-263 (D2PAK) packaging, also compatible with the TO-263 family. The STD6N52K3 uses DPAK packaging, which is a different package type. DPAK and TO-263 have different pin configurations and footprints; PCB layout changes are required if using the STD6N52K3.

Q: Does the higher Vdss rating of the IXTA8N65X2 create any design concerns?

A: No. A higher Vdss rating provides additional design margin and does not create concerns. The device will operate safely at voltages up to 650V. For applications designed for 500V operation, the IXTA8N65X2 will perform identically to the IXTA6N50P while offering improved reliability through increased voltage headroom.

Q: Are all substitute parts RoHS compliant?

A: The IXTA8N65X2, IRF730STRLPBF, and STD6N52K3 are all ROHS3 compliant. The original IXTA6N50P does not specify RoHS status. All substitute parts meet current environmental and regulatory requirements for new production.

Q: What is the significance of the lower Rds On in the IXTA8N65X2?

A: Lower Rds On (0.5 Ohm vs. 1.1 Ohm) results in reduced power dissipation during conduction. For a given drain current, the voltage drop across the device is lower, generating less heat. This improves thermal performance and allows for more efficient circuit operation. The IXTA8N65X2 also has higher power dissipation rating (150W vs. 100W), further supporting thermal performance improvements.

Q: Can the STD6N52K3 be used if the application requires only 5A instead of 6A?

A: The STD6N52K3 is rated for 5A continuous drain current, which meets a 5A requirement. However, the package type (DPAK) differs from the original TO-263AA, requiring PCB layout modifications. Additionally, the Vdss rating (525V) provides only 25V margin above the 500V requirement, compared to the 150V margin provided by the IXTA8N65X2 (650V). The IXTA8N65X2 remains the preferred substitute due to superior electrical performance and package compatibility.