IXTA6N50D2 Equivalent & Substitute Parts

Part Overview

The IXTA6N50D2 is an N-Channel depletion-mode MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 6A continuous drain current at 25°C. The device is housed in a TO-263AA surface mount package and dissipates up to 300W at the case temperature. This component is classified as Active product status and is RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the TO-263 package family and surface mount assembly requirements. Alternative devices may offer different current ratings, power dissipation capabilities, or gate charge characteristics that suit specific application requirements.

Substiute Parts

IXTA6N50D2

IXYSIn Stock: 7907IXTA6N50D2 Datasheet

Current PartRFQ

IRFS11N50ATRLP

Vishay SiliconixIn Stock: 1776IRFS11N50ATRLP Datasheet

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R5011FNJTL

Rohm SemiconductorIn Stock: 2915R5011FNJTL Datasheet

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STB11NK50ZT4

STMicroelectronicsIn Stock: 4404STB11NK50ZT4 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTA6N50D2 are selected based on the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 500V
• Continuous Drain Current (Id) must support the application requirement; substitutes may have higher current ratings
• On-State Resistance (Rds On) characteristics must be compatible with circuit design
• Gate Charge (Qg) and Input Capacitance (Ciss) affect switching performance and gate drive requirements
• Maximum Gate-Source Voltage (Vgs Max) must accommodate the gate drive circuit
• Power Dissipation capability must meet thermal requirements
• Operating Temperature Range must include the application's operating conditions

Mechanical Compatibility Criteria:

• Package Type must be TO-263 family (TO-263AA, TO-263AB, or D2PAK equivalent)
• Surface Mount assembly compatibility
• Moisture Sensitivity Level (MSL) rating of 1 (Unlimited) for standard handling

Compliance Criteria:

• RoHS3 compliance status
• REACH compliance status
• Active product status for long-term availability

The substitute parts listed below meet these criteria and are electrically and mechanically compatible with the IXTA6N50D2 in applications where the specified parameter ranges are acceptable.

Parameter Comparison

Engineering Selection Recommendations

IRFS11N50ATRLP (Vishay Siliconix)

This substitute offers higher continuous drain current (11A) and lower gate charge (52 nC) compared to the IXTA6N50D2. The device is housed in TO-263AB package and maintains 500V Vdss rating. However, this part is RoHS non-compliant, which may restrict use in applications requiring RoHS3 certification. Power dissipation is rated at 170W, lower than the main part. This device is suitable for applications requiring higher current handling with reduced gate drive requirements, provided RoHS compliance is not mandated.

R5011FNJTL (Rohm Semiconductor)

This substitute provides 11A continuous drain current with significantly reduced gate charge (30 nC) and lower input capacitance (950 pF). The device is RoHS3 compliant and maintains 500V Vdss rating. Power dissipation is limited to 50W, substantially lower than the main part. This device is suitable for low-power applications requiring minimal gate drive energy and RoHS3 compliance. The LPTS package is mechanically compatible with TO-263 family assembly processes.

STB11NK50ZT4 (STMicroelectronics)

This substitute offers 10A continuous drain current with gate charge of 68 nC and input capacitance of 1390 pF. The device is RoHS3 compliant and REACH unaffected, maintaining 500V Vdss rating. Power dissipation is rated at 125W. The D2PAK package provides direct mechanical compatibility with TO-263 assembly. This device is suitable for applications requiring moderate current handling with RoHS3 compliance and standard thermal management.

Compliance Considerations:

For applications requiring RoHS3 compliance, the IXTA6N50D2, R5011FNJTL, and STB11NK50ZT4 are suitable. The IRFS11N50ATRLP is not RoHS compliant and must not be used in restricted applications. All substitute parts maintain REACH compliance status equivalent to or better than the main part.

Frequently Asked Questions (FAQ)

Q: Can the IRFS11N50ATRLP be used as a direct replacement for the IXTA6N50D2?

A: The IRFS11N50ATRLP is electrically compatible in terms of voltage rating (500V Vdss) and package family (TO-263AB). However, it is RoHS non-compliant, which disqualifies it from applications requiring RoHS3 certification. The higher current rating (11A vs. 6A) and lower gate charge (52 nC vs. 96 nC) may require gate drive circuit adjustment. Verify RoHS compliance requirements before selection.

Q: What is the primary difference between the R5011FNJTL and other substitutes?

A: The R5011FNJTL has the lowest gate charge (30 nC) and input capacitance (950 pF) among the listed substitutes, resulting in minimal gate drive energy requirements. However, its power dissipation rating (50W) is significantly lower than the main part (300W), limiting its use to low-power applications. The LPTS package is mechanically compatible with TO-263 assembly processes.

Q: Are all substitute parts compatible with the same PCB footprint as the IXTA6N50D2?

A: The IXTA6N50D2 uses TO-263AA package, while substitutes use TO-263AB, D2PAK, or LPTS packages. All are within the TO-263 family and share compatible D2PAK (2 Leads + Tab) mechanical specifications. PCB footprints designed for TO-263 family devices will accommodate these substitutes. Verify specific package dimensions with the manufacturer datasheet if tight layout constraints exist.

Q: Which substitute is best for RoHS3-compliant applications?

A: Both R5011FNJTL and STB11NK50ZT4 are RoHS3 compliant. The R5011FNJTL is preferred for low-power applications due to minimal gate charge and capacitance. The STB11NK50ZT4 is preferred for moderate-power applications requiring higher thermal dissipation (125W vs. 50W). The IXTA6N50D2 itself is also RoHS3 compliant and remains the primary choice if power dissipation requirements exceed 125W.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTA6N50D2 has 96 nC @ 5V, while substitutes range from 30 nC to 68 nC @ 10V. Lower gate charge reduces gate drive power consumption and switching losses. If the gate drive circuit is designed for the IXTA6N50D2's 96 nC specification, substitutes with lower gate charge will operate with reduced drive requirements. Verify gate drive voltage compatibility (Vgs Max: ±20V for main part, ±30V for substitutes).

Q: What are the thermal management implications of selecting a substitute?

A: Power dissipation ratings differ significantly: IXTA6N50D2 (300W), IRFS11N50ATRLP (170W), STB11NK50ZT4 (125W), and R5011FNJTL (50W). Applications requiring continuous operation at high power levels must use devices with adequate thermal ratings. Thermal management design (heatsinking, PCB copper area) must accommodate the selected device's power dissipation capability. Lower-rated devices may require forced cooling or reduced operating current.

Q: Can input capacitance differences affect circuit performance?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching speed. The IXTA6N50D2 has 2800 pF @ 25V, while substitutes range from 950 pF to 1423 pF. Lower input capacitance reduces gate drive current requirements and switching losses. If the gate drive circuit is optimized for the main part's higher capacitance, substitutes with lower capacitance will switch faster. Verify gate drive circuit stability and switching frequency compatibility.