IXTA5N60P Equivalent & Substitute Parts

Part Overview

The IXTA5N60P is an N-Channel 600V 5A MOSFET manufactured by IXYS in the PolarHV™ series. This device is rated for 100W power dissipation and is housed in a TO-263AA surface mount package. The part is currently listed as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IXTA5N60P

IXYSIn Stock: 902IXTA5N60P Datasheet

Current PartRFQ

IXTA8N65X2

IXYSIn Stock: 852IXTA8N65X2 Datasheet

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STD5N62K3

STMicroelectronicsIn Stock: 41641STD5N62K3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTA5N60P is determined by the following critical parameters:

Voltage Rating: The substitute must support a minimum Drain to Source Voltage (Vdss) equal to or greater than 600V to maintain circuit protection margins.

Current Rating: The substitute must support a continuous drain current (Id) at or above 5A to handle the design load without thermal stress.

Power Dissipation: The substitute must support power dissipation at or above 100W to ensure thermal stability under worst-case operating conditions.

On-State Resistance (Rds On): The substitute should maintain comparable or lower Rds On values to preserve circuit efficiency and minimize heat generation.

Gate Charge (Qg): Lower gate charge values reduce switching losses and improve circuit performance.

Package Compatibility: The substitute must be compatible with TO-263 surface mount footprints to enable direct board-level replacement.

Operating Temperature: The substitute must support the full -55°C to 150°C operating range.

Parameter Comparison

Engineering Selection Recommendations

IXTA8N65X2 (IXYS Ultra X2 Series)

The IXTA8N65X2 exceeds all critical electrical parameters of the IXTA5N60P. It provides 650V voltage rating (50V margin above the original), 8A continuous current (60% higher), and 150W power dissipation (50% higher). The Rds On is significantly lower at 0.5 Ohm, reducing conduction losses. Gate charge is lower at 12 nC, improving switching efficiency. The device is housed in a compatible TO-263 surface mount package and carries Active product status with ROHS3 compliance. This substitute is suitable for direct replacement in applications where the enhanced performance characteristics are acceptable.

STD5N62K3 (STMicroelectronics SuperMESH3™ Series)

The STD5N62K3 meets the voltage requirement at 620V and operates within the same temperature range. However, the continuous drain current is rated at 4.2A, which is below the original 5A specification. Power dissipation is limited to 70W, also below the original 100W rating. The Rds On at 1.6 Ohm is comparable to the original. Gate charge is significantly higher at 26 nC, increasing switching losses. The device uses a DPAK (TO-252-3) package, which differs from the original TO-263 footprint and requires board redesign. This substitute is suitable only for applications with reduced current and power requirements or where board layout modifications are feasible. The device carries Active product status with ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can the IXTA8N65X2 be used as a direct replacement for the IXTA5N60P?

A: The IXTA8N65X2 is electrically compatible and can be used as a direct replacement. Both devices use the TO-263 surface mount package, enabling direct board-level substitution. The IXTA8N65X2 exceeds all electrical specifications of the original part, including voltage, current, and power dissipation ratings.

Q: What are the limitations of using the STD5N62K3 as a substitute?

A: The STD5N62K3 has two significant limitations. First, the continuous drain current rating of 4.2A is below the original 5A specification, limiting its use to applications with reduced current demands. Second, the package is DPAK (TO-252-3) rather than TO-263, requiring PCB redesign and component repositioning. The higher gate charge of 26 nC also increases switching losses compared to the original 14.2 nC.

Q: Are there package compatibility issues between the substitute parts?

A: The IXTA8N65X2 uses the same TO-263 package as the original IXTA5N60P and is a direct footprint replacement. The STD5N62K3 uses a DPAK (TO-252-3) package, which has a different footprint and requires board layout modifications.

Q: How do the on-state resistance values compare?

A: The IXTA5N60P has an Rds On of 1.7 Ohm at 2.5A and 10V. The IXTA8N65X2 provides superior performance at 0.5 Ohm at 4A and 10V, reducing conduction losses. The STD5N62K3 is comparable at 1.6 Ohm at 2.1A and 10V.

Q: What is the significance of gate charge differences?

A: Gate charge affects switching speed and energy loss during transitions. The IXTA5N60P has a gate charge of 14.2 nC. The IXTA8N65X2 at 12 nC provides faster switching with lower losses. The STD5N62K3 at 26 nC results in slower switching and higher switching losses, which may impact circuit efficiency.

Q: Are both substitute parts compliant with current regulations?

A: Both the IXTA8N65X2 and STD5N62K3 carry ROHS3 compliance and REACH Unaffected status, meeting current environmental and regulatory requirements. Both are classified as EAR99 for export control purposes.

Q: What is the inventory status of these substitute parts?

A: The IXTA8N65X2 has 786 pieces in stock. The STD5N62K3 has significantly higher availability at 41,550 pieces in stock. Both are listed as Active products with ongoing manufacturer support.