IXTA4N80P N-Channel 800V 3.6A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA4N80P is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by IXYS, rated for 800V drain-to-source voltage with a continuous drain current of 3.6A at 25°C. The device is housed in a TO-263AA surface mount package and dissipates up to 100W at the case temperature. This component is classified as Active product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified voltage and current ratings, while maintaining compatibility with the TO-263 package family and surface mount assembly requirements.

Substiute Parts

IXTA4N80P

IXYSIn Stock: 814IXTA4N80P Datasheet

Current PartRFQ

STB7NK80ZT4

STMicroelectronicsIn Stock: 5462STB7NK80ZT4 Datasheet

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STD3N80K5

STMicroelectronicsIn Stock: 20134STD3N80K5 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXTA4N80P are qualified based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
• FET Type: N-Channel configuration required
• Technology: Metal oxide semiconductor field-effect transistor (MOSFET)
• Mounting Type: Surface mount only
• Package Family: TO-263 package family (D2PAK, DPAK, or equivalent)
• Operating Temperature Range: Must support -55°C to 150°C
• Compliance: RoHS3 compliant, MSL 1 rating

Secondary Compatibility Parameters:

• Gate voltage (Vgs) maximum: ±30V
• Drive voltage: 10V gate drive capability
• Thermal performance: Case temperature rating

The substitute parts listed below meet these criteria and are therefore electrically and mechanically compatible with the IXTA4N80P in applications where the specified parameters are satisfied.

Parameter Comparison

Engineering Selection Recommendations

STB7NK80ZT4 (STMicroelectronics SuperMESH™ Series)

The STB7NK80ZT4 is a direct substitute for the IXTA4N80P in applications requiring higher current capacity. This device maintains the 800V Vdss rating and supports 5.2A continuous drain current, exceeding the IXTA4N80P specification by 1.6A. The STB7NK80ZT4 features improved on-resistance (1.8Ohm @ 2.6A, 10V) and higher power dissipation capability (125W). The D2PAK package is mechanically compatible with TO-263 footprints. Both devices are Active status, RoHS3 compliant, and MSL 1 rated. The STB7NK80ZT4 is suitable for applications where the IXTA4N80P current rating is marginal or where thermal headroom is required.

STD3N80K5 (STMicroelectronics SuperMESH5™ Series)

The STD3N80K5 is a substitute for the IXTA4N80P in current-limited applications. This device maintains the 800V Vdss rating but operates at 2.5A continuous drain current, below the IXTA4N80P specification by 1.1A. The STD3N80K5 features comparable on-resistance (3.5Ohm @ 1A, 10V) and reduced power dissipation (60W). The DPAK package is mechanically compatible with TO-263 footprints. Both devices are Active status, RoHS3 compliant, and MSL 1 rated. The STD3N80K5 is suitable for lower-power applications or space-constrained designs where the IXTA4N80P current capability exceeds system requirements.

Frequently Asked Questions (FAQ)

Q: Can the STB7NK80ZT4 be used as a direct replacement for the IXTA4N80P?

A: Yes. The STB7NK80ZT4 meets all primary substitution criteria: 800V Vdss rating, N-Channel MOSFET technology, surface mount configuration, TO-263 package family compatibility, -55°C to 150°C operating range, RoHS3 compliance, and MSL 1 rating. The higher current rating (5.2A vs. 3.6A) and improved on-resistance provide enhanced performance margin in the same electrical class.

Q: Can the STD3N80K5 be used as a direct replacement for the IXTA4N80P?

A: Yes, with current derating consideration. The STD3N80K5 meets all primary substitution criteria: 800V Vdss rating, N-Channel MOSFET technology, surface mount configuration, TO-263 package family compatibility, -55°C to 150°C operating range, RoHS3 compliance, and MSL 1 rating. The lower current rating (2.5A vs. 3.6A) requires verification that application current demands do not exceed 2.5A continuous at 25°C case temperature.

Q: Are the package types interchangeable between IXTA4N80P, STB7NK80ZT4, and STD3N80K5?

A: The IXTA4N80P uses TO-263AA packaging (D2PAK variant). The STB7NK80ZT4 uses D2PAK packaging. The STD3N80K5 uses DPAK packaging. All three packages belong to the TO-263 family and share the same 2-lead plus tab configuration with identical pin spacing and thermal tab dimensions. PCB footprints designed for TO-263 accommodate all three devices.

Q: What are the key electrical differences between these three MOSFETs?

A: All three devices share identical 800V Vdss rating and ±30V Vgs maximum. Primary differences are continuous drain current (IXTA4N80P: 3.6A, STB7NK80ZT4: 5.2A, STD3N80K5: 2.5A), on-resistance characteristics, gate charge, and power dissipation capability. These differences reflect different silicon technologies and die sizes within the 800V MOSFET class.

Q: Are all three devices RoHS3 compliant?

A: Yes. The IXTA4N80P, STB7NK80ZT4, and STD3N80K5 are all RoHS3 compliant with MSL 1 (unlimited) moisture sensitivity level rating. All devices are REACH unaffected and classified under ECCN EAR99.

Q: What is the operating temperature range for these devices?

A: All three MOSFETs operate across the identical temperature range of -55°C to 150°C junction temperature (TJ). This specification applies to all substitute relationships.

Q: How do gate charge specifications affect substitution?

A: Gate charge (Qg) values differ among the three devices: IXTA4N80P (14.2 nC @ 10V), STB7NK80ZT4 (56 nC @ 10V), and STD3N80K5 (9.5 nC @ 10V). Higher gate charge requires longer switching times and increased gate drive power. Applications with fixed gate drive circuits must verify that drive capability accommodates the substitute device's gate charge specification.

Q: Can these devices be used in high-frequency switching applications?

A: Gate charge and input capacitance specifications determine switching performance. The STD3N80K5 features the lowest gate charge (9.5 nC) and lowest input capacitance (130 pF), making it suitable for high-frequency applications. The STB7NK80ZT4 exhibits higher gate charge (56 nC) and input capacitance (1138 pF), requiring lower switching frequencies or enhanced gate drive capability.