IXTA4N65X2 Equivalent & Substitute Parts

Part Overview

The IXTA4N65X2 is an N-Channel MOSFET manufactured by IXYS, rated for 650 V drain-to-source voltage with 4 A continuous drain current at 25°C. This device is housed in a TO-263 surface mount package and is part of the Ultra X2 series. The component is Active in product status and RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances of the application, particularly when the main part experiences inventory constraints or when alternative packaging or supplier options are required for supply chain optimization.

Substiute Parts

IXTA4N65X2

IXYSIn Stock: 139794IXTA4N65X2 Datasheet

Current PartRFQ

R6007ENJTL

Rohm SemiconductorIn Stock: 1072R6007ENJTL Datasheet

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R6007KNJTL

Rohm SemiconductorIn Stock: 1726R6007KNJTL Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXTA4N65X2 is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 650 V to maintain circuit protection margins.

Current Handling Capability: The continuous drain current (Id) must equal or exceed 4 A at 25°C to support the application load.

On-State Resistance (Rds On): The maximum on-state resistance at specified gate and drain conditions must not exceed 850 mOhm to ensure thermal performance and power dissipation limits are met.

Gate Drive Characteristics: Gate threshold voltage (Vgs(th)) and gate charge (Qg) must be compatible with the gate drive circuit topology.

Thermal Performance: Power dissipation capability must support the application's thermal budget.

Package Compatibility: Surface mount TO-263 package footprint compatibility is required.

Compliance Status: RoHS3 compliance and REACH unaffected status must be maintained.

The identified substitute parts (R6007ENJTL and R6007KNJTL) are Rohm Semiconductor N-Channel MOSFETs that operate at 600 V with higher continuous drain current ratings (7 A), lower on-state resistance (620 mOhm), and compatible surface mount packaging.

Parameter Comparison

Engineering Selection Recommendations

IXTA4N65X2 (Primary Part): This component is the specified design choice and remains the primary selection when available. It provides 650 V voltage rating with 80 W power dissipation capability and is Active in product status with full RoHS3 and REACH compliance.

R6007KNJTL (Preferred Substitute): This Rohm Semiconductor MOSFET operates at 600 V with 7 A continuous drain current and 78 W power dissipation. The operating temperature range matches the primary part (-55°C to 150°C). This device is Active in product status with RoHS3 compliance and REACH unaffected status. The 50 V reduction in Vdss is acceptable in applications where the circuit voltage does not exceed 600 V. The lower on-state resistance (620 mOhm versus 850 mOhm) provides improved thermal performance. Gate charge is 14.5 nC, which is higher than the primary part but compatible with standard gate drive circuits.

R6007ENJTL (Secondary Substitute): This Rohm Semiconductor MOSFET also operates at 600 V with 7 A continuous drain current. The operating temperature range is limited to 150°C maximum (no lower temperature specification provided). Power dissipation is rated at 40 W, which is lower than both the primary part and R6007KNJTL. This device is Active in product status with RoHS3 compliance and REACH unaffected status. Selection of this part is appropriate only when thermal constraints permit the lower power dissipation rating.

All substitute parts maintain surface mount TO-263 package compatibility and are available in Active product status with equivalent compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can R6007KNJTL be used as a direct replacement for IXTA4N65X2?

A: R6007KNJTL is functionally compatible when the application circuit voltage does not exceed 600 V. Both devices share identical drive voltage (10 V), similar gate threshold voltage (5 V), compatible package footprint (TO-263), and matching operating temperature range (-55°C to 150°C). The lower on-state resistance of R6007KNJTL (620 mOhm) provides superior thermal performance compared to the primary part (850 mOhm). Gate charge is higher (14.5 nC versus 8.3 nC), which may require gate drive circuit evaluation for switching speed compatibility.

Q: What is the voltage rating difference between IXTA4N65X2 and the Rohm substitutes?

A: The IXTA4N65X2 is rated for 650 V drain-to-source voltage, while both R6007ENJTL and R6007KNJTL are rated for 600 V. The 50 V difference represents a 7.7% reduction in maximum voltage capability. Applications operating at or below 600 V circuit voltage can use the Rohm devices without voltage margin reduction. Applications requiring the full 650 V rating must use the IXTA4N65X2.

Q: How do the current ratings compare?

A: The IXTA4N65X2 is rated for 4 A continuous drain current at 25°C. Both R6007ENJTL and R6007KNJTL are rated for 7 A continuous drain current at 25°C. The Rohm devices provide 75% higher current capacity, which allows for lower junction temperatures and improved thermal headroom in applications requiring 4 A or less.

Q: Are there thermal performance differences?

A: The IXTA4N65X2 is rated for 80 W maximum power dissipation. R6007KNJTL is rated for 78 W, providing nearly equivalent thermal capability. R6007ENJTL is rated for 40 W, which is 50% lower. The lower on-state resistance of the Rohm devices (620 mOhm versus 850 mOhm) results in reduced conduction losses at equivalent current levels, partially offsetting the lower power dissipation ratings.

Q: What are the gate charge implications?

A: The IXTA4N65X2 has gate charge of 8.3 nC at 10 V. R6007KNJTL has 14.5 nC, and R6007ENJTL has 20 nC. Higher gate charge requires longer switching times or higher gate drive current to achieve equivalent switching frequency. Gate drive circuit compatibility must be evaluated when substituting these devices.

Q: Are all three devices RoHS3 compliant?

A: Yes. The IXTA4N65X2, R6007KNJTL, and R6007ENJTL are all RoHS3 compliant with REACH unaffected status. All three devices meet equivalent environmental and regulatory requirements.

Q: What is the packaging difference between IXTA4N65X2 and the Rohm substitutes?

A: All three devices use surface mount TO-263 package (D2PAK with 2 leads plus tab). The IXTA4N65X2 is supplied in Tube packaging, while R6007ENJTL and R6007KNJTL are supplied in Cut Tape (CT) and Digi-Reel® packaging. The physical footprint and pin configuration are identical, allowing direct PCB layout compatibility.

Q: Can R6007ENJTL be used instead of R6007KNJTL?

A: R6007ENJTL and R6007KNJTL share identical voltage and current ratings (600 V, 7 A) and package type. The primary differences are power dissipation (40 W versus 78 W) and gate charge (20 nC versus 14.5 nC). R6007ENJTL is suitable only when thermal constraints permit the lower power dissipation rating. R6007KNJTL is the preferred Rohm substitute due to higher power dissipation capability and lower gate charge.

Q: What is the operating temperature range for each device?

A: The IXTA4N65X2 and R6007KNJTL both operate from -55°C to 150°C junction temperature. R6007ENJTL is specified only to 150°C maximum (no lower temperature limit provided). Applications requiring operation below 0°C must use either the IXTA4N65X2 or R6007KNJTL.