IXTA4N60P N-Channel 600V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA4N60P is an N-Channel 600V 4A MOSFET manufactured by IXYS in the PolarHV™ series, housed in a TO-263AA surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. The part delivers 89W maximum power dissipation and operates across a temperature range of -55°C to 150°C (TJ).

Due to its obsolete status, equivalent parts with active product status are required for ongoing applications requiring 600V-class N-Channel MOSFETs with comparable electrical and mechanical characteristics.

Substiute Parts

IXTA4N60P

IXYSIn Stock: 1161IXTA4N60P Datasheet

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IXTA4N65X2

IXYSIn Stock: 139794IXTA4N65X2 Datasheet

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IRFBC30ASTRLPBF

Vishay SiliconixIn Stock: 15636IRFBC30ASTRLPBF Datasheet

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STD4N62K3

STMicroelectronicsIn Stock: 15752STD4N62K3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTA4N60P is determined by the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Substitute parts must equal or exceed 600V
• Continuous Drain Current (Id): Substitute parts must equal or exceed 4A at 25°C
• On-State Resistance (Rds On): Substitute parts must not significantly exceed 2 Ohm @ 2A, 10V to maintain thermal performance
• Gate Charge (Qg): Lower values reduce switching losses; values up to 23 nC are acceptable
• Power Dissipation: Substitute parts must support thermal requirements of the application

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: TO-263-3 or D2PAK (2 Leads + Tab) packages ensure pin compatibility
• Operating Temperature: -55°C to 150°C (TJ) range must be maintained

Compliance & Status:

• Product Status: Active status preferred for production continuity
• RoHS Compliance: ROHS3 Compliant status ensures regulatory alignment
• Moisture Sensitivity Level: MSL 1 (Unlimited) acceptable

Three substitute parts meet these criteria: IXTA4N65X2 (IXYS), IRFBC30ASTRLPBF (Vishay Siliconix), and STD4N62K3 (STMicroelectronics).

Parameter Comparison

Engineering Selection Recommendations

IXTA4N65X2 (IXYS Ultra X2 Series)

The IXTA4N65X2 is the primary equivalent substitute for the IXTA4N60P. Both devices are manufactured by IXYS and share the same base product number (IXTA4). The IXTA4N65X2 features a higher Vdss rating (650V vs. 600V), matching the 4A continuous drain current specification. The on-state resistance is reduced to 850 mOhm, providing improved thermal efficiency. Gate charge is lower at 8.3 nC, reducing switching losses. The device maintains identical operating temperature range (-55°C to 150°C) and is housed in the same TO-263 package family. Active product status and ROHS3 compliance ensure production continuity and regulatory alignment.

IRFBC30ASTRLPBF (Vishay Siliconix)

The IRFBC30ASTRLPBF is a direct voltage-class equivalent with 600V Vdss matching the original part. Continuous drain current is rated at 3.6A, slightly below the 4A specification. On-state resistance is 2.2 Ohm, comparable to the original 2 Ohm specification. Gate charge is elevated at 23 nC, resulting in higher switching losses relative to other substitutes. The device is housed in TO-263 (D2PAK) package, maintaining mechanical compatibility. Active product status and ROHS3 compliance support production use.

STD4N62K3 (STMicroelectronics SuperMESH3™ Series)

The STD4N62K3 offers a 620V Vdss rating with 3.8A continuous drain current. On-state resistance is optimized at 1.95 Ohm, providing superior thermal performance. Gate charge is 14 nC, comparable to the original specification. The device is housed in DPAK (TO-252-3) package, which differs from the original TO-263 package; pin compatibility requires layout verification. Operating temperature specification lists only 150°C (TJ) maximum without explicit lower bound. Active product status and ROHS3 compliance are confirmed.

Selection Basis:

• IXTA4N65X2 is recommended for direct replacement where IXYS sourcing is preferred and package compatibility is critical.
• IRFBC30ASTRLPBF is suitable for applications where Vishay Siliconix supply chain is established and the 3.6A current rating is acceptable.
• STD4N62K3 is applicable where superior on-state resistance performance is required, provided DPAK package footprint is accommodated in the design.

All three substitutes are active products with ROHS3 compliance, ensuring regulatory and supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXTA4N65X2 directly replace the IXTA4N60P without circuit modification?

A: The IXTA4N65X2 is mechanically and electrically compatible with the IXTA4N60P. Both devices share the same base product number, identical package (TO-263), and operating temperature range. The higher Vdss rating (650V vs. 600V) provides additional voltage margin. The reduced on-state resistance (850 mOhm vs. 2 Ohm) improves thermal efficiency. No circuit modification is required for direct substitution.

Q: What is the significance of the lower gate charge in the IXTA4N65X2?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTA4N65X2 gate charge of 8.3 nC is lower than the original 13 nC, resulting in reduced switching losses and faster switching transitions. This improves overall circuit efficiency and reduces heat generation in the gate drive circuit.

Q: Why does the STD4N62K3 use a different package (DPAK) than the original TO-263?

A: The STD4N62K3 is housed in DPAK (TO-252-3) package, while the IXTA4N60P uses TO-263 (D2PAK) package. Although both are surface mount packages with similar thermal characteristics, the pin layouts and footprints differ. PCB layout modification is required for substitution. Verify that the DPAK footprint is compatible with the existing design before implementation.

Q: Is the IRFBC30ASTRLPBF suitable if the application requires the full 4A continuous drain current?

A: The IRFBC30ASTRLPBF is rated for 3.6A continuous drain current at 25°C, which is 0.4A below the original 4A specification. Substitution is acceptable only if the application current requirement does not exceed 3.6A. For applications requiring the full 4A rating, the IXTA4N65X2 or STD4N62K3 are preferred.

Q: Are all substitute parts RoHS compliant?

A: Yes. The IXTA4N65X2, IRFBC30ASTRLPBF, and STD4N62K3 are all ROHS3 compliant. The original IXTA4N60P is REACH Unaffected. All substitutes meet current regulatory requirements for electronic component manufacturing and distribution.

Q: What is the impact of the STD4N62K3 operating temperature specification?

A: The STD4N62K3 datasheet specifies 150°C (TJ) as the maximum junction temperature without explicitly stating the minimum operating temperature. The original IXTA4N60P specifies -55°C to 150°C (TJ). For applications requiring operation below 0°C, confirm the STD4N62K3 minimum temperature rating with the manufacturer before substitution.

Q: Can multiple substitute parts be used interchangeably in the same production run?

A: The three substitute parts have different electrical characteristics (Rds On, Qg, Ciss) and package types. Using multiple substitutes in the same production run introduces variability in thermal performance, switching characteristics, and PCB layout. For consistency, select a single substitute part for a given production batch. Design validation is required if switching between substitutes across production runs.

Q: What is the thermal performance difference between the substitutes?

A: Power dissipation ratings indicate thermal capability: IXTA4N60P (89W), IXTA4N65X2 (80W), IRFBC30ASTRLPBF (74W), and STD4N62K3 (70W). The IXTA4N65X2 offers the closest thermal performance to the original. The STD4N62K3 has the lowest power dissipation rating but the lowest on-state resistance (1.95 Ohm), which may offset this in low-current applications. Thermal design review is recommended for applications operating near maximum power dissipation limits.