IXTA460P2 N-Channel 500V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTA460P2 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 500V drain-to-source voltage with 24A continuous drain current at 25°C. Manufactured by IXYS in the PolarP2™ series, this device is housed in a TO-263AA surface mount package and dissipates up to 480W at the case temperature. The part is designated as Last Time Buy, indicating production discontinuation. Equivalent and substitute parts are necessary to maintain design continuity and ensure long-term component availability for new designs and production requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	24	A (Tc)
On-State Resistance (Rds On Max) @ 12A, 10V	270	mOhm
Gate-Source Threshold Voltage (Vgs(th) Max) @ 250µA	4.5	V
Gate Charge (Qg Max) @ 10V	48	nC
Power Dissipation (Max)	480	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263AA (D2PAK)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IXTA460P2 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 24A at 25°C
On-State Resistance (Rds On): Must not exceed 270mOhm at the specified gate-source voltage and drain current
Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Package Type: Must be TO-263AA or equivalent D2PAK surface mount configuration
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Operating Temperature Range: Must support -55°C to 150°C (TJ)
Gate Charge (Qg): Lower values indicate faster switching characteristics
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Determines thermal management requirements
RoHS and REACH Compliance: Must maintain regulatory compliance

Substitute parts are classified as either manufacturer-recommended equivalents or similar alternatives based on how closely they match the primary criteria. Parts that meet all primary criteria with minimal deviation in secondary parameters are suitable for direct substitution in most applications.

Parameter Comparison

Parameter	IXTA460P2	IXTA16N50P	FDB20N50F	STB23NM50N
Manufacturer	IXYS	IXYS	onsemi	STMicroelectronics
Vdss (V)	500	500	500	500
Id @ 25°C (A)	24	16	20	17
Rds On Max (mOhm)	270 @ 12A, 10V	400 @ 8A, 10V	260 @ 10A, 10V	190 @ 8.5A, 10V
Vgs(th) Max (V)	4.5 @ 250µA	5.5 @ 250µA	5 @ 250µA	4 @ 250µA
Qg Max (nC)	48 @ 10V	43 @ 10V	65 @ 10V	45 @ 10V
Ciss Max (pF)	2890 @ 25V	2250 @ 25V	3390 @ 25V	1330 @ 50V
Power Dissipation Max (W)	480	300	250	125
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	to 150
Package	TO-263AA	TO-263AA	TO-263 (D2PAK)	TO-263 (D2PAK)
Product Status	Last Time Buy	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXTA16N50P (IXYS Manufacturer-Recommended Equivalent)

The IXTA16N50P is designated as the manufacturer-recommended substitute for the IXTA460P2. Both devices are manufactured by IXYS and share identical voltage ratings (500V Vdss) and package configuration (TO-263AA). The IXTA16N50P is in Active product status, ensuring continued availability. The primary trade-off is reduced continuous drain current (16A versus 24A) and lower power dissipation capability (300W versus 480W). This part is suitable for applications where the 24A current requirement can be reduced or where thermal constraints permit lower power handling. Both parts maintain ROHS3 compliance and identical operating temperature ranges.

FDB20N50F (onsemi Similar Alternative)

The FDB20N50F from onsemi provides a closer current rating match (20A versus 24A) while maintaining 500V Vdss and D2PAK package compatibility. This device exhibits superior on-state resistance performance (260mOhm versus 270mOhm) and is in Active product status with high inventory availability (13,886 pieces). The FDB20N50F is suitable for applications requiring current levels between 20A and 24A. Power dissipation is lower (250W versus 480W), requiring thermal design verification. All regulatory compliance requirements are met.

STB23NM50N (STMicroelectronics Similar Alternative)

The STB23NM50N from STMicroelectronics offers the lowest on-state resistance (190mOhm) among substitute options, indicating superior efficiency characteristics. Continuous drain current is rated at 17A, positioning this part for applications requiring moderate current levels. The device maintains 500V Vdss and D2PAK package compatibility. Power dissipation is significantly lower (125W versus 480W), requiring careful thermal analysis for high-power applications. Product status is Active with adequate inventory (1,530 pieces). All compliance certifications are maintained.

Selection Basis:

Component selection should be based on application-specific current requirements, thermal management capabilities, and long-term availability needs. The IXTA16N50P is recommended for direct replacement where current reduction is acceptable. The FDB20N50F provides the best balance between current capacity and availability. The STB23NM50N is suitable for efficiency-critical applications with lower current demands. All substitute parts maintain regulatory compliance and surface mount package compatibility with the original IXTA460P2.

Frequently Asked Questions (FAQ)

Q: Can the IXTA16N50P directly replace the IXTA460P2 in all applications?

A: The IXTA16N50P shares identical voltage ratings (500V) and package configuration (TO-263AA) with the IXTA460P2. However, the reduced continuous drain current rating (16A versus 24A) and lower power dissipation (300W versus 480W) require verification that the application does not exceed these limits. If the circuit operates below 16A continuous current, direct substitution is feasible.

Q: What is the primary difference between the IXTA460P2 and FDB20N50F?

A: Both devices are rated for 500V Vdss and use D2PAK surface mount packages. The FDB20N50F has a lower continuous drain current rating (20A versus 24A) and reduced power dissipation (250W versus 480W). The FDB20N50F exhibits slightly better on-state resistance (260mOhm versus 270mOhm). The FDB20N50F is manufactured by onsemi and is in Active product status, whereas the IXTA460P2 is Last Time Buy.

Q: Why does the STB23NM50N have lower power dissipation than the IXTA460P2?

A: Power dissipation ratings reflect the thermal management capabilities of the package and die design. The STB23NM50N is rated for 125W (Tc) compared to 480W (Tc) for the IXTA460P2. This difference indicates that the STB23NM50N is designed for lower-power applications or requires more aggressive thermal management (larger heatsinks or forced cooling) to handle equivalent power levels.

Q: Are all substitute parts compatible with the same PCB layout as the IXTA460P2?

A: All listed substitute parts use TO-263 (D2PAK) surface mount packages, which share identical pin configurations and footprints. PCB layout compatibility is maintained across all substitutes. However, thermal pad design and heatsink requirements may differ based on power dissipation ratings.

Q: What is the significance of the Last Time Buy status for the IXTA460P2?

A: Last Time Buy status indicates that the IXTA460P2 is no longer in production and existing inventory will be depleted. New designs should transition to Active product alternatives such as the IXTA16N50P, FDB20N50F, or STB23NM50N to ensure long-term component availability and supply chain continuity.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the MOSFET on and off. Lower gate charge values (IXTA16N50P at 43nC, STB23NM50N at 45nC) indicate faster switching transitions compared to the IXTA460P2 (48nC) and FDB20N50F (65nC). In high-frequency switching applications, lower gate charge reduces driver power consumption and improves switching speed.

Q: Do all substitute parts meet the same regulatory compliance standards?

A: Yes. All listed substitute parts are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Moisture sensitivity level is 1 (Unlimited) for all parts. Regulatory compliance is maintained across all substitutes.

Q: What thermal considerations apply when substituting the IXTA460P2?

A: The IXTA460P2 is rated for 480W power dissipation, while substitutes range from 125W to 300W. Applications requiring the full 480W dissipation capability cannot use lower-rated substitutes without additional thermal management. Verify that the application's actual power dissipation does not exceed the substitute part's rating, or implement enhanced cooling solutions such as larger heatsinks or forced-air cooling.

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