IXTA3N60P N-Channel MOSFET 600V 3A Equivalent & Substitute Parts

Part Overview

The IXTA3N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 3A continuous drain current at 25°C. This device is housed in a TO-263AA surface mount package and is part of the PolarHV™ series. The IXTA3N60P is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing.

Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance, while accommodating packaging and availability constraints.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	3	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	2.9 Ohm @ 500mA, 10V	Ohm
Power Dissipation (Max)	70	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—

Substitute Part Grouping Explanation

Substitution of the IXTA3N60P is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 600V to maintain voltage margin in the application circuit.

Current Rating Compatibility: Substitute parts must support continuous drain current (Id) at or above 3A at 25°C to handle the design load without thermal derating.

On-Resistance (Rds On) Compatibility: Substitute parts must maintain on-resistance characteristics at 10V gate drive that do not exceed the original specification, ensuring power dissipation and thermal performance remain within acceptable limits.

Package Compatibility: Substitute parts must use surface mount packages compatible with TO-263 footprints (TO-263-3, D2PAK, TO-263AB) to enable direct board-level replacement without layout modification.

Operating Temperature Range: Substitute parts must support the full -55°C to 150°C operating temperature range to maintain performance across all environmental conditions.

Technology and Gate Characteristics: All substitute parts must be N-Channel MOSFETs with gate voltage specifications (Vgs Max ±30V) and threshold voltage characteristics compatible with existing gate drive circuits.

Parameter Comparison

Parameter	IXTA3N60P	IXTA4N65X2	STD3N62K3
Manufacturer	IXYS	IXYS	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	600 V	650 V	620 V
Continuous Drain Current (Id) @ 25°C	3 A	4 A	2.7 A
Drive Voltage (Max Rds On)	10 V	10 V	10 V
Rds On (Max) @ Id, Vgs	2.9 Ohm @ 500mA, 10V	0.85 Ohm @ 2A, 10V	2.5 Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	5.5 V @ 50µA	5 V @ 250µA	4.5 V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	9.8 nC @ 10 V	8.3 nC @ 10 V	13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	411 pF @ 25 V	455 pF @ 25 V	385 pF @ 25 V
Vgs (Max)	±30 V	±30 V	±30 V
Power Dissipation (Max)	70 W	80 W	45 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-252-3, DPAK
Product Status	Obsolete	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXTA4N65X2 (IXYS, Active Status): This substitute provides superior electrical performance with 650V Vdss rating, 4A continuous drain current, and 80W power dissipation. The IXTA4N65X2 maintains the same TO-263 package footprint as the original IXTA3N60P, enabling direct board-level replacement. The device is currently in active production status with ROHS3 compliance certification. The lower on-resistance at 2A (0.85 Ohm) compared to the original specification provides improved thermal efficiency. Gate charge and input capacitance characteristics are compatible with existing gate drive circuits. This part is recommended for new designs and production continuity where higher current capacity and voltage margin are acceptable.

STD3N62K3 (STMicroelectronics, Active Status): This substitute offers comparable electrical performance with 620V Vdss rating and 2.7A continuous drain current, closely matching the original 3A specification. The STD3N62K3 is housed in a DPAK (TO-252) package, which differs from the original TO-263 footprint and requires PCB layout modification. On-resistance at 1.4A (2.5 Ohm) is comparable to the original specification. Power dissipation is rated at 45W, lower than the original 70W rating. The device is in active production status with ROHS3 compliance certification. This part is suitable for applications where package footprint modification is feasible and current requirements do not exceed 2.7A.

Both substitute parts maintain full compatibility with the -55°C to 150°C operating temperature range, ±30V gate voltage specifications, and 10V drive voltage requirements of the original IXTA3N60P design.

Frequently Asked Questions (FAQ)

Q: Can the IXTA4N65X2 directly replace the IXTA3N60P without PCB modification?

A: Yes. Both devices use the TO-263 package (D2PAK, 2 Leads + Tab configuration), which provides identical footprint compatibility. Direct board-level substitution is possible without layout changes.

Q: Can the STD3N62K3 directly replace the IXTA3N60P without PCB modification?

A: No. The STD3N62K3 uses a DPAK (TO-252) package, which has a different footprint than the original TO-263 package. PCB layout modification is required for this substitution.

Q: What is the primary difference in electrical performance between the IXTA4N65X2 and the original IXTA3N60P?

A: The IXTA4N65X2 provides higher voltage rating (650V vs. 600V), higher current capacity (4A vs. 3A), and higher power dissipation capability (80W vs. 70W). On-resistance at higher current levels (0.85 Ohm @ 2A) is lower than the original specification, resulting in improved thermal efficiency.

Q: What is the primary difference in electrical performance between the STD3N62K3 and the original IXTA3N60P?

A: The STD3N62K3 provides slightly higher voltage rating (620V vs. 600V) and comparable current capacity (2.7A vs. 3A). On-resistance characteristics are similar (2.5 Ohm @ 1.4A vs. 2.9 Ohm @ 500mA). Power dissipation is lower (45W vs. 70W), which may limit thermal headroom in high-power applications.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both the IXTA4N65X2 and STD3N62K3 are ROHS3 compliant. The original IXTA3N60P RoHS status is not specified in the available documentation.

Q: Do the substitute parts have the same gate drive voltage requirements as the original IXTA3N60P?

A: Yes. All three devices operate with 10V maximum gate drive voltage and support ±30V gate voltage specifications. Gate threshold voltage characteristics are compatible with existing gate drive circuits.

Q: Which substitute part is recommended for applications requiring maximum thermal performance?

A: The IXTA4N65X2 is recommended for applications requiring maximum thermal performance, with 80W power dissipation capability and lower on-resistance at higher current levels compared to both the original IXTA3N60P and the STD3N62K3.

Q: Can either substitute part handle continuous drain current above 3A?

A: The IXTA4N65X2 supports 4A continuous drain current at 25°C, exceeding the original 3A specification. The STD3N62K3 supports 2.7A continuous drain current, which is slightly below the original 3A specification and may require thermal derating in high-current applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message